Low RDS ON N Channel MOSFET YANGJIE YJT300G10H for Load Switching and Battery Management Applications
Key Attributes
Model Number:
YJT300G10H
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
300A
RDS(on):
1.7mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
110pF
Number:
1 N-channel
Output Capacitance(Coss):
4nF
Pd - Power Dissipation:
250W
Input Capacitance(Ciss):
13.6nF
Gate Charge(Qg):
257nC@10V
Mfr. Part #:
YJT300G10H
Package:
TOLL-8L
Product Description
Product Overview
The YJT300G10H is a N-Channel Enhancement Mode Field Effect Transistor featuring Split Gate Trench MOSFET technology for low RDS(ON) and excellent heat dissipation. It is designed for high-density cell applications and meets UL 94 V-0 flammability rating. This transistor is ideal for load switching, battery management, and solar applications.
Product Attributes
- Brand: Yangzhou Yangjie Electronic Technology Co., Ltd.
- Model: YJT300G10H
- Technology: Split Gate Trench MOSFET
- Flammability Rating: UL 94 V-0
- Certifications: Halogen Free, RoHS Compliant
Technical Specifications
| Parameter | Symbol | Conditions | Min | Typ | Max | Unit |
| Absolute Maximum Ratings | ||||||
| Drain-source Voltage | VDS | 100 | V | |||
| Gate-source Voltage | VGS | 20 | V | |||
| Drain Current (TA=25) | ID | 30 | A | |||
| Drain Current (TA=100) | ID | 19 | A | |||
| Drain Current (TC=25) | ID | 300 | A | |||
| Drain Current (TC=100) | ID | 190 | A | |||
| Pulsed Drain Current | IDM | 1200 | A | |||
| Avalanche energy | EAS | TJ=25, VDD=50V, VG=10V, RG=25, L=5mH, IAS=24A | 1440 | mJ | ||
| Total Power Dissipation (TA=25) | PD | 4 | W | |||
| Total Power Dissipation (TA=100) | PD | 1.6 | W | |||
| Total Power Dissipation (TC=25) | PD | 250 | W | |||
| Total Power Dissipation (TC=100) | PD | 100 | W | |||
| Junction and Storage Temperature Range | TJ ,TSTG | -55 | +150 | |||
| Thermal Resistance | ||||||
| Thermal Resistance Junction-to-Ambient (Steady-State) | RJA | Mounted on 1 in FR-4 board with 2oz. Copper, TA=25 | 25 | 30 | /W | |
| Thermal Resistance Junction-to-Case (Steady-State) | RJC | 0.4 | 0.5 | /W | ||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS= 0V, ID=250A | 100 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=100V, VGS=0V | 1 | A | ||
| Zero Gate Voltage Drain Current (Tj=150) | IDSS | VDS=100V, VGS=0V | 100 | A | ||
| Gate-Body Leakage Current | IGSS | VGS= 20V, VDS=0V | 100 | nA | ||
| Gate Threshold Voltage | VGS(th) | VDS= VGS, ID=250A | 2 | 2.8 | 4 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=10V, ID=150A | 1.35 | 1.7 | m | |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=10V, ID=20A | 1.35 | 1.7 | m | |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=6V, ID=20A | 1.75 | 2.5 | m | |
| Diode Forward Voltage | VSD | IS=150A, VGS=0V | 0.9 | 1.2 | V | |
| Gate resistance | RG | f=1MHz | 1 | |||
| Maximum Body-Diode Continuous Current | IS | 300 | A | |||
| Dynamic Parameters | ||||||
| Input Capacitance | Ciss | VDS=50V, VGS=0V, f=1MHz | 13600 | pF | ||
| Output Capacitance | Coss | VDS=50V, VGS=0V, f=1MHz | 4000 | pF | ||
| Reverse Transfer Capacitance | Crss | VDS=50V, VGS=0V, f=1MHz | 110 | pF | ||
| Switching Parameters | ||||||
| Total Gate Charge | Qg | VGS=10V, VDS=50V, ID=150A | 257 | nC | ||
| Gate-Source Charge | Qgs | VGS=10V, VDS=50V, ID=150A | 89 | nC | ||
| Gate-Drain Charge | Qg d | VGS=10V, VDS=50V, ID=150A | 88 | nC | ||
| Reverse Recovery Charge | Qrr | IF=150A, di/dt=100A/us | 374 | nC | ||
| Reverse Recovery Time | trr | IF=150A, di/dt=100A/us | 162 | ns | ||
| Turn-on Delay Time | tD(on) | VGS=10V, VDD=50V, ID=150A, RGEN=2.2 | 51 | ns | ||
| Turn-on Rise Time | tr | VGS=10V, VDD=50V, ID=150A, RGEN=2.2 | 158 | ns | ||
| Turn-off Delay Time | tD(off) | VGS=10V, VDD=50V, ID=150A, RGEN=2.2 | 98 | ns | ||
| Turn-off fall Time | tf | VGS=10V, VDD=50V, ID=150A, RGEN=2.2 | 52 | ns | ||
2411220012_YANGJIE-YJT300G10H_C20605968.pdf
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