IGBT module YANGJIE MG25P12E1 with maximum junction temperature 175 and 166W power dissipation rating
Key Attributes
Model Number:
MG25P12E1
Product Custom Attributes
Pd - Power Dissipation:
166W
Td(off):
104ns
Td(on):
16ns
Operating Temperature:
-40℃~+150℃
Collector-Emitter Breakdown Voltage (Vces):
1.2kV
Input Capacitance(Cies):
1.45nF@25V
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
5.2V@1.2mA
Gate Charge(Qg):
0.2uC
Switching Energy(Eoff):
1.68mJ
Turn-On Energy (Eon):
2.58mJ
Mfr. Part #:
MG25P12E1
Package:
Through Hole,107.5x45mm
Product Description
Product Overview
The MG25P12E1 S-M345 is a RoHS compliant IGBT module designed for motor drivers, AC and DC servo drive amplifiers, and UPS applications. It features low switching losses, low VCE(sat) with a positive temperature coefficient, an integrated fast & soft recovery anti-parallel FWD, a low inductance case, high short circuit capability (10us), and a maximum junction temperature of 175.
Product Attributes
- Brand: Yangjie
- Certifications: RoHS Compliant
Technical Specifications
| Module | Parameter | Symbol | Conditions | Value | Unit |
| IGBT-inverter | Collector-Emitter Voltage | VCES | VGE=0V, IC =1mA, Tvj=25 | 1200 | V |
| Continuous Collector Current | IC | TC=100,Tvjmax=175 | 25 | A | |
| Repetitive Peak Collector Current | ICRM | tp=1ms | 50 | A | |
| Gate-Emitter Voltage | VGES | Tvj=25 | ±20 | V | |
| Total Power Dissipation | Ptot | TC=25, Tvjmax=175 | 166 | W | |
| Gate-emitter Threshold Voltage | VGE(th) | VGE=VCE, IC =1.2mA,Tvj=25 | 5.2-6.5 | V | |
| Collector-Emitter Cut-off Current | ICES | VCE=1200V,VGE=0V, Tvj=25 | 1.0 | mA | |
| Collector-Emitter Saturation Voltage | VCE(sat) | IC=25A,VGE=15V, Tvj=25 | 1.90 | V | |
| Input Capacitance | Cies | VCE=25V, VGE =0V, f=1MHz, Tvj=25 | 1.45 | nF | |
| Turn-on Delay Time | td(on) | IC=25A, VCE=600V, VGE= 15V, RG=33, Tvj=25 | 16 | ns | |
| Diode-inverter | Repetitive Peak Reverse Voltage | VRRM | Tvj=25 | 1200 | V |
| Continuous DC Forward Current | IF | 25 | A | ||
| Repetitive Peak Forward Current | IFRM | tp=1ms | 50 | A | |
| I2t-value | I2t | VR=0V,tp=10ms,Tvj=125 | 90.0 | A2s | |
| Forward Voltage | VF | IF=25A,Tvj=25 | 2.00 | V | |
| Recovered Charge | Qrr | IF=25A, VR=600V, -diF/dt =500A/us, Tvj=25 | 2.78 | uC | |
| Peak Reverse Recovery Current | Irr | IF=25A, VR=600V, -diF/dt =500A/us, Tvj=25 | 18 | A | |
| Reverse Recovery Energy | Erec | IF=25A, VR=600V, -diF/dt =500A/us, Tvj=25 | 0.94 | mJ | |
| IGBT-brake-chopper | Collector-Emitter Voltage | VCES | VGE=0V, IC =1mA, Tvj=25 | 1200 | V |
| Continuous Collector Current | IC | TC=100,Tvjmax=175 | 15 | A | |
| Repetitive Peak Collector Current | ICRM | tp=1ms | 30 | A | |
| Gate-Emitter Voltage | VGES | Tvj=25 | ±20 | V | |
| Total Power Dissipation | Ptot | TC=25, Tvjmax=175 | 155 | W | |
| Gate-emitter Threshold Voltage | VGE(th) | VGE=VCE, IC =0.5mA,Tvj=25 | 5.2-6.5 | V | |
| Collector-Emitter Cut-off Current | ICES | VCE=1200V,VGE=0V, Tvj=25 | 1.0 | mA | |
| Collector-Emitter Saturation Voltage | VCE(sat) | IC=15A,VGE=15V, Tvj=25 | 1.90 | V | |
| Input Capacitance | Cies | VCE=25V, VGE=0V, f=1MHz, Tvj=25 | 1.35 | nF | |
| Turn-on Delay Time | td(on) | IC=15A, VCE=600V, VGE= 15V, RG=39, Tvj=25 | 11 | ns | |
| Diode-brake-chopper | Repetitive Peak Reverse Voltage | VRRM | Tvj=25 | 1200 | V |
| Continuous DC Forward Current | IF | 15 | A | ||
| Repetitive Peak Forward Current | IFRM | tp=1ms | 30 | A | |
| I2t-value | I2t | VR=0V,tp=10ms,Tvj=125 | 40.0 | A2s | |
| Forward Voltage | VF | IF=15A,Tvj=25 | 2.00 | V | |
| Recovered Charge | Qrr | IF=15A, VR=600V, -diF/dt =550A/us, Tvj=25 | 1.20 | uC | |
| Peak Reverse Recovery Current | Irr | IF=15A, VR=600V, -diF/dt =550A/us, Tvj=25 | 10 | A | |
| Reverse Recovery Energy | Erec | IF=15A, VR=600V, -diF/dt =550A/us, Tvj=25 | 0.35 | mJ | |
| Diode-rectifier | Repetitive Peak Reverse Voltage | VRRM | Tvj=25 | 1600 | V |
| Average output Current | IF(AV) | 50/60Hz, sine wave, TC=100 | 35 | A | |
| Maximum RMS Current at Rectifier Output | IRMSM | TC=100 | 60 | A | |
| Surge Forward Current | IFSM | VR=0V,tp=10ms,Tvj=25 | 370 | A | |
| I2t-value | I2t | VR=0V,tp=10ms,Tvj=25 | 680 | A2s | |
| Diode Forward Voltage | VF | IF=25A,Tvj=125 | 1.02 | V | |
| NTC-Thermistor | Rated Resistance | R25 | 5.0 | k | |
| Deviation of R100 | ΔR/R | TC=100,R100=493.3 | -5 to 5 | % | |
| Power Dissipation | P25 | 20.0 | mW | ||
| B-value | B25/50 | R2=R25exp[B25/50(1/T2-1/(298.15 K))] | 3375 | K | |
| Module lead resistance, terminals-chip | Rcc’+EE’ | TC=25, per switch | 4.0 | m | |
| Module Characteristics | Isolation voltage | Visol | t=1min,f=50Hz | 2500 | V |
| Maximum Junction Temperature | Tjmax | 175 | |||
| Operating Junction Temperature | Tvj op | -40 to 150 | |||
| Storage Temperature | Tstg | -40 to 125 | |||
| Stray-inductance-module | Lsce | 60 | nH | ||
| Module lead resistance, terminals-chip | RAA’+CC’ | 3.0 | m | ||
| Thermal Resistance Junction-to Case | RJC | per IGBT-inverter | 0.90 | K/W | |
| Thermal Resistance Case-to Sink | RCS | per IGBT-inverter | 0.33 | K/W | |
| Module-to-Sink | per Module | 0.02 | K/W | ||
| Module-to-Sink Torque | Ms | 3.0-6.0 | N·m | ||
| Weight of Module | G | 180 | g |
2505121648_YANGJIE-MG25P12E1_C2942704.pdf
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