Trench Power LV MOSFET Technology Integrated in YANGJIE YJL3407C P Channel Enhancement Mode Transistor
Key Attributes
Model Number:
YJL3407C
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
4.1A
RDS(on):
43mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
2.4V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
60pF
Number:
1 P-Channel
Output Capacitance(Coss):
75pF
Input Capacitance(Ciss):
490pF
Pd - Power Dissipation:
1.25W
Gate Charge(Qg):
6nC@10V
Mfr. Part #:
YJL3407C
Package:
SOT-23(TO-236)
Product Description
Product Overview
The YJL3407C is a P-Channel Enhancement Mode Field Effect Transistor featuring Trench Power LV MOSFET technology for low RDS(ON) and high-speed switching. It is designed for applications such as battery protection, load switching, and power management. This device offers high density cell design, Moisture Sensitivity Level 1, and meets UL 94 V-0 flammability rating, with a Halogen Free design.
Product Attributes
- Brand: Yangzhou Yangjie Electronic Technology Co., Ltd.
- Product Code: YJL3407C
- Technology: Trench Power LV MOSFET
- Certifications: UL 94 V-0 Flammability Rating, Halogen Free
- Moisture Sensitivity Level: 1
Technical Specifications
| Parameter | Symbol | Conditions | Min | Typ | Max | Unit |
| Drain-Source Voltage | VDS | VGS= 0V, ID=-250A | -30 | - | - | V |
| Gate-Source Voltage | VGS | 20 | V | |||
| Drain Current | ID | TA=25 | - | - | -4.1 | A |
| TA=100 | - | - | -2.6 | A | ||
| Pulsed Drain Current | IDM | - | - | -30 | A | |
| Total Power Dissipation | PD | TA=25 | - | - | 1.25 | W |
| TA=100 | - | - | 0.5 | W | ||
| Junction and Storage Temperature Range | TJ ,TSTG | -55 | +150 | |||
| Drain-Source Breakdown Voltage | BVDSS | VGS= 0V, ID=-250A | -30 | - | - | V |
| Zero Gate Voltage Drain Current | IDSS | VDS=-30V, VGS=0V | - | - | -1 | A |
| Zero Gate Voltage Drain Current | IDSS | VDS=-30V, VGS=0V, Tj=150 | - | - | -100 | A |
| Gate-Body Leakage Current | IGSS | VGS= 20V, VDS=0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VDS= VGS, ID=-250A | -1 | -1.5 | -2.4 | V |
| Static Drain-Source On-Resistance | RDS(on) | VGS=-10V, ID=-4.1A | - | 33 | 43 | m |
| VGS=-4.5V, ID=-3.5A | - | 50 | 65 | m | ||
| Diode Forward Voltage | VSD | IS=-4.1A, VGS=0V | - | - | -1.2 | V |
| Gate resistance | RG | f=1MHz | - | 20 | - | |
| Maximum Body-Diode Continuous Current | IS | - | - | -4.1 | A | |
| Input Capacitance | Ciss | VDS=-15V, VGS=0V, f=1MHz | - | 490 | - | pF |
| Output Capacitance | Coss | - | 75 | - | pF | |
| Reverse Transfer Capacitance | Crss | - | 60 | - | pF | |
| Total Gate Charge | Qg | VGS=-10V, VDS=-15V, ID=-4.1A | - | 9 | - | nC |
| Gate-Source Charge | Qgs | - | 1.5 | - | ||
| Gate-Drain Charge | Qg d | - | 2.3 | - | ||
| Reverse Recovery Charge | Qrr | IF=-4.1A, di/dt=100A/us | - | 12 | - | nC |
| Reverse Recovery Time | trr | - | 32 | - | ns | |
| Turn-on Delay Time | tD(on) | VGS=-10V, VDD=-15V, ID=-4.1A RGEN=2.5 | - | 9 | - | ns |
| Turn-on Rise Time | tr | - | 3 | - | ||
| Turn-off Delay Time | tD(off) | - | 29 | - | ||
| Turn-off fall Time | tf | - | 15 | - | ||
| Thermal Resistance Junction-to-Ambient | RJA | Steady-State | - | 80 | 100 | /W |
2410121513_YANGJIE-YJL3407C_C20605885.pdf
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