Power Management Transistor YANGJIE YJD18GP10AQ P Channel Enhancement Mode MOSFET with Excellent Uniformity
Key Attributes
Model Number:
YJD18GP10AQ
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
18A
RDS(on):
110mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
25pF
Number:
1 P-Channel
Output Capacitance(Coss):
119pF
Input Capacitance(Ciss):
1.051nF
Pd - Power Dissipation:
36W
Gate Charge(Qg):
20.1nC@10V
Mfr. Part #:
YJD18GP10AQ
Package:
TO-252
Product Description
Product Overview
The YJD18GP10AQ is a P-Channel Enhancement Mode Field Effect Transistor from Yangzhou Yangjie Electronic Technology Co., Ltd. Utilizing split gate trench MOSFET technology, it offers low RDS(on) and FOM, extremely low switching loss, and excellent stability and uniformity. This AEC-Q101 qualified transistor is designed for power management and portable equipment applications.
Product Attributes
- Brand: Yangzhou Yangjie Electronic Technology Co., Ltd.
- Part Number: YJD18GP10AQ
- Technology: P-Channel Enhancement Mode Field Effect Transistor
- Certifications: AEC-Q101 Qualified
- Origin: China (implied by manufacturer location)
Technical Specifications
| Parameter | Symbol | Conditions | Min | Typ | Max | Unit |
| Product Summary | ||||||
| Drain-Source Voltage | VDS | -100 | V | |||
| Drain Current | ID | -18 | A | |||
| RDS(ON) | RDS(ON) | VGS=-10V | <110 | m | ||
| RDS(ON) | RDS(ON) | VGS=-4.5V | <120 | m | ||
| 100% UIS Tested | Yes | |||||
| 100% VDS Tested | Yes | |||||
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | TA=25 | -100 | V | ||
| Gate-Source Voltage | VGS | TA=25 | 20 | V | ||
| Drain Current | ID | TC=25 | -18 | A | ||
| Drain Current | ID | Tc=100 | -12 | A | ||
| Pulsed Drain Current | IDM | -72 | A | |||
| Avalanche energy | EAS | TJ=25, VDD=-50V, VG=-10V, RG=25, L=0.5mH, ID=-12A | 36 | mJ | ||
| Total Power Dissipation | PD | Tc=25 | 72 | W | ||
| Total Power Dissipation | PD | Tc=100 | 29 | W | ||
| Junction and Storage Temperature Range | TJ ,TSTG | -55 | +150 | |||
| Thermal Resistance | ||||||
| Thermal Resistance Junction-to-Ambient | RJA | Steady-State | 40 | 50 | /W | |
| Thermal Resistance Junction-to-Case | RJC | Steady-State | 1.35 | 1.7 | /W | |
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS= 0V, ID=-250A | -100 | - | V | |
| Zero Gate Voltage Drain Current | IDSS | VDS=-100V, VGS=0V | -1 | A | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=-100V, VGS=0V, Tj=150 | -100 | A | ||
| Gate-Body Leakage Current | IGSS | VDS=0V, VGS= 20V | 100 | nA | ||
| Gate Threshold Voltage | VGS(th) | VDS= VGS, ID=-250A | -1.0 | -1.8 | -2.5 | V |
| Static Drain-Source On-Resistance | RDS(on) | VGS=-10V, ID=-10A | 83 | 110 | m | |
| Static Drain-Source On-Resistance | RDS(on) | VGS=-4.5V, ID=-5A | 95 | 120 | m | |
| Diode Forward Voltage | VSD | IS=-10A, VGS=0V | -1.3 | V | ||
| Gate resistance | RG | f=1MHz, Open drain | 10 | - | ||
| Maximum Body-Diode Continuous Current | IS | -18 | A | |||
| Dynamic Parameters | ||||||
| Input Capacitance | Ciss | VDS=-50V, VGS=0V, f=1MHz | 1051 | - | pF | |
| Output Capacitance | Coss | VDS=-50V, VGS=0V, f=1MHz | 119 | - | pF | |
| Reverse Transfer Capacitance | Crss | VDS=-50V, VGS=0V, f=1MHz | 25 | - | pF | |
| Switching Parameters | ||||||
| Total Gate Charge | Qg | VGS=-10V, VDS=-50V, ID=-5A | 20.1 | - | nC | |
| Gate-Source Charge | Qgs | VGS=-10V, VDS=-50V, ID=-5A | 3.9 | - | nC | |
| Gate-Drain Charge | Qg | VGS=-10V, VDS=-50V, ID=-5A | 4.3 | - | nC | |
| Reverse Recovery Charge | Qrr | IF=-5A, di/dt=100A/us | 140 | - | nC | |
| Reverse Recovery Time | trr | IF=-5A, di/dt=100A/us | 70 | - | ns | |
| Turn-on Delay Time | tD(on) | VGS=-10V, VDD=-50V, RL=2.5, RGEN=6 | 10 | - | ns | |
| Turn-on Rise Time | tr | VGS=-10V, VDD=-50V, RL=2.5, RGEN=6 | 30 | - | ns | |
| Turn-off Delay Time | tD(off) | VGS=-10V, VDD=-50V, RL=2.5, RGEN=6 | 77 | - | ns | |
| Turn-off fall Time | tf | VGS=-10V, VDD=-50V, RL=2.5, RGEN=6 | 81 | - | ns | |
2410121502_YANGJIE-YJD18GP10AQ_C2942676.pdf
Related Products
Compact surface mount bridge rectifier YONGYUTAI DB157S with plated solderable leads and ABS housing
Product OverviewThis series of bridge rectifiers features glass passivated die construction, offering a low forward voltage drop and high current/surge current capabilities. Designed for surface mount applications, these rectifiers are constructed from UL 94V-0 rated plastic material. They are ...
N channel Power MOSFET XTX BRT40N210P2 with 840A Pulsed Drain Current and Enhanced Trench Technology
Product OverviewThe BRT40N210P2 is an N-channel Enhancement Mode Power MOSFET from XTX Technology Inc. It features advanced trench technology, offering excellent RDS(ON) and low gate charge. This MOSFET is suitable for load switch, PWM applications, and power management scenarios.Product AttributesB...
400 watt LDMOS FET power amplifier Wolfspeed PXAE213708NB-V1-R2 for 2110 to 2180 MHz cellular applications
Product Overview The Wolfspeed PXAE213708NB is a 400-watt LDMOS FET designed for multi-standard cellular power amplifier applications within the 2110 to 2180 MHz frequency band. This device features broadband internal input and output matching, an asymmetrical Doherty design with distinct main and ...
High speed switching transistor YANGJIE DGP15N65CTL designed for hard and soft switching applications
Product OverviewThe DGP15N65CTL0 is a high-speed smooth switching IGBT discrete device designed for hard and soft switching applications. It features a maximum junction temperature of 175, a positive temperature coefficient, and high ruggedness with temperature stability. This IGBT is suitable for ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
