Trench Power LV MOSFET N Channel Transistor YANGJIE YJQ3622A Suitable for High Current Load and Hard Switched Circuits
Key Attributes
Model Number:
YJQ3622A
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
30A
Operating Temperature -:
-55℃~+175℃
RDS(on):
16mΩ@4.5V,30A
Gate Threshold Voltage (Vgs(th)):
1V
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
164pF@15V
Number:
2 N-Channel
Output Capacitance(Coss):
201pF
Input Capacitance(Ciss):
1.015nF@15V
Pd - Power Dissipation:
10.5W
Gate Charge(Qg):
23.6nC
Mfr. Part #:
YJQ3622A
Package:
DFN3333-8L-Dual
Product Description
Product Overview
The YJQ3622A is an N-Channel Enhancement Mode Field Effect Transistor featuring Trench Power LV MOSFET technology. It offers excellent heat dissipation through its package design and a high-density cell design for low RDS(ON). This transistor is suitable for high current load applications, load switching, hard switched and high frequency circuits, and uninterruptible power supplies.
Product Attributes
- Brand: Yangzhou Yangjie Electronic Technology Co., Ltd.
- Model: YJQ3622A
- Origin: China
- Certifications: RoHS Compliant
Technical Specifications
| Parameter | Symbol | Conditions | Min | Typ | Max | Unit |
| Absolute Maximum Ratings | ||||||
| Drain-source Voltage | VDS | 30 | V | |||
| Gate-source Voltage | VGS | ±20 | V | |||
| Drain Current | ID | TC=25 | 30 | A | ||
| Drain Current | ID | TC=100 | 21 | A | ||
| Pulsed Drain Current | IDM | 115 | A | |||
| Total Power Dissipation | PD | TC=25 | 21 | W | ||
| Total Power Dissipation | PD | TC=100 | 10.5 | W | ||
| Single Pulse Avalanche Energy | EAS | 140 | mJ | |||
| Thermal Resistance Junction-to-Case | RJC | 7.1 | / W | |||
| Junction and Storage Temperature Range | TJ ,TSTG | -55 | +175 | |||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS= 0V, ID=250µA | 30 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=30V,VGS=0V, TJ=25 | 1 | µA | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=30V,VGS=0V, TJ=55 | 5 | µA | ||
| Gate-Body Leakage Current | IGSS | VGS= ±20V, VDS=0V | ±100 | nA | ||
| Gate Threshold Voltage | VGS(th) | VDS= VGS, ID=250µA | 1.0 | 1.5 | 2.5 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS= 10V, ID=20A | 7.5 | 13 | mΩ | |
| Static Drain-Source On-Resistance | RDS(ON) | VGS= 4.5V, ID=10A | 11.5 | 16 | mΩ | |
| Diode Forward Voltage | VSD | IS=15A,VGS=0V | 0.85 | 1.2 | V | |
| Maximum Body-Diode Continuous Current | IS | 30 | A | |||
| Dynamic Parameters | ||||||
| Input Capacitance | Ciss | VDS=15V,VGS=0V,f=1MHZ | 1015 | pF | ||
| Output Capacitance | Coss | VDS=15V,VGS=0V,f=1MHZ | 201 | pF | ||
| Reverse Transfer Capacitance | Crss | VDS=15V,VGS=0V,f=1MHZ | 164 | pF | ||
| Switching Parameters | ||||||
| Total Gate Charge | Qg | VGS=10V,VDS=20V,ID=20A | 23.6 | nC | ||
| Gate-Source Charge | Qgs | VGS=10V,VDS=20V,ID=20A | 3.9 | |||
| Gate-Drain Charge | Qg | VGS=10V,VDS=20V,ID=20A | 7.0 | |||
| Reverse Recovery Charge | Qrr | IF=15A, di/dt=100A/us | 0.2 | |||
| Reverse Recovery Time | trr | IF=15A, di/dt=100A/us | 5 | ns | ||
| Turn-on Delay Time | tD(on) | VGS=10V,VDD=20V, ID=2A, RGEN=3Ω | 7 | |||
| Turn-on Rise Time | tr | VGS=10V,VDD=20V, ID=2A, RGEN=3Ω | 19 | |||
| Turn-off Delay Time | tD(off) | VGS=10V,VDD=20V, ID=2A, RGEN=3Ω | 24 | |||
| Turn-off fall Time | tf | VGS=10V,VDD=20V, ID=2A, RGEN=3Ω | 24 | |||
2410121551_YANGJIE-YJQ3622A_C919566.pdf
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