Power semiconductor YANGJIE MG75HF12MRC1 IGBT module suitable for induction heating welders and SMPS
Key Attributes
Model Number:
MG75HF12MRC1
Product Custom Attributes
Td(off):
248ns
Pd - Power Dissipation:
625W
Operating Temperature:
-40℃~+150℃
Td(on):
80ns
Collector-Emitter Breakdown Voltage (Vces):
1.2kV
Input Capacitance(Cies):
5.5nF
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
5V@3mA
Gate Charge(Qg):
780nC@15V
Pulsed Current- Forward(Ifm):
150A
Output Capacitance(Coes):
0.4nF
Reverse Recovery Time(trr):
160ns
Switching Energy(Eoff):
4.9mJ
Turn-On Energy (Eon):
7.45mJ
Mfr. Part #:
MG75HF12MRC1
Package:
Screw Terminals
Product Description
Product Overview
The MG75HF12MRC1 is an IGBT module designed for high-reliability power applications. It features short circuit rating, low stray inductance, low saturation voltage, and ultra-low loss, making it suitable for industrial inverters, servo applications, SMPS, UPS, induction heating, and welders. This lead-free product is compliant with RoHS requirements.
Product Attributes
- Brand: Not specified
- Origin: Not specified
- Certifications: RoHS Compliant
Technical Specifications
| Symbol | Description | Values | Units | Min. | Typ. | Max. | |
| Absolute Maximum Ratings | |||||||
| VCES | Collector - Emitter Voltage | 1200 | V | ||||
| VGES | Gate-Emitter Voltage | ±20 | V | ||||
| IC | DC Collector Current | 25°C | 105 | A | |||
| 80°C | 75 | A | |||||
| ICM(1) | Peak Collector Current | 150 | A | ||||
| IF | Diode Continuous Forward Current | 75 | A | ||||
| IFM | Peak FWD Current Repetitive | 150 | A | ||||
| tSC | Short Circuit Withstand Time | >10 | μs | ||||
| PD | Maximum Power Dissipation (IGBT) | 625 | W | ||||
| TJ | Maximum Junction Temperature | 150 | °C | ||||
| TJOP | Operating Temperature | -40 ~ +150 | °C | ||||
| Tstg | Storage Temperature | -40 ~ +125 | °C | ||||
| Viso | Isolation Voltage | 3000 | V | ||||
| Electrical Characteristics of IGBT | |||||||
| V(BR)CES | Collector-Emitter Breakdown Voltage | 1200 | V | ||||
| ICES | Collector Leakage Current | 100 | μA | ||||
| 1 | mA | ||||||
| IGES | Gate Leakage Current | ±400 | nA | ||||
| VGE(th) | Gate - Emitter Threshold Voltage | 5 | 6.2 | 7 | V | ||
| VCE(sat) | Collector Emitter Saturation Voltage | 1.8 | V | ||||
| 2 | V | ||||||
| Cies | Input Capacitance | 5.5 | nF | ||||
| Coes | Output Capacitance | 0.4 | nF | ||||
| Switching Characteristics (TJ = 25) | |||||||
| td(on) | Turn-on Delay Time | 80 | ns | ||||
| tr | Rise Time | 70 | ns | ||||
| td(off) | Turn-off Delay Time | 248 | ns | ||||
| Tf | Fall Time | 290 | ns | ||||
| Eon | Turn-on Switching Loss | 7.45 | mJ | ||||
| Eoff | Turn-off Switching Loss | 4.9 | mJ | ||||
| Switching Characteristics (TJ = 125) | |||||||
| td(on) | Turn-on Delay Time | 95 | ns | ||||
| tr | Rise Time | 85 | ns | ||||
| td(off) | Turn-off Delay Time | 262 | ns | ||||
| Tf | Fall Time | 320 | ns | ||||
| Eon | Turn-on Switching Loss | 10.3 | mJ | ||||
| Eoff | Turn-off Switching Loss | 7.8 | mJ | ||||
| Qge | Gate Charge | 780 | nC | ||||
| Electrical Characteristics of FWD | |||||||
| VFM | Forward Voltage | 2 | 2.4 | V | |||
| trr | Reverse Recovery Time | 160 | ns | ||||
| Irr | Peak Reverse Recovery Current | 55 | A | ||||
| Qrr | Reverse Recovery Charge | 5.3 | μC | ||||
| Thermal Resistance Characteristics | |||||||
| RJC | Junction-To-Case (IGBT Part, Per Leg) | 0.2 | °C/W | ||||
| RJC | Junction-To-Case (Diode Part, Per Leg) | 0.5 | °C/W | ||||
| RCS | Case-To-Sink (Conductive Grease Applied) | 0.1 | °C/W | ||||
2410121228_YANGJIE-MG75HF12MRC1_C781197.pdf
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