IGBT module YANGJIE MG100HF12MIC1 designed for high frequency medical motion control and UPS systems
Key Attributes
Model Number:
MG100HF12MIC1
Product Custom Attributes
Pd - Power Dissipation:
680W
Td(off):
208ns
Td(on):
118ns
Operating Temperature:
-40℃~+150℃
Collector-Emitter Breakdown Voltage (Vces):
1.2kV
Input Capacitance(Cies):
8.3nF
IGBT Type:
FS (Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
5V@4mA
Gate Charge(Qg):
200nC@15V
Output Capacitance(Coes):
0.29nF
Reverse Recovery Time(trr):
110ns
Switching Energy(Eoff):
5.62mJ
Turn-On Energy (Eon):
2.93mJ
Mfr. Part #:
MG100HF12MIC1
Package:
Screw Terminals
Product Description
Product Overview
The MG100HF12MIC1 is a high-performance IGBT module designed for demanding applications. It features high short circuit capability with self-limiting current, Trench+Field Stop IGBT technology for efficient switching, and a positive temperature coefficient for VCE(sat). The module includes fast switching and short tail current characteristics, along with free-wheeling diodes offering fast and soft reverse recovery. These attributes contribute to low switching losses, making it suitable for high frequency, medical, motion control, and UPS systems.
Product Attributes
- Brand: Yangjie
- Model: MG100HF12MIC1 S-M302
- Certifications: RoHS Compliant
- Origin: China (implied by www.21yangjie.com)
Technical Specifications
| Parameter | Description | Values | Units |
| Absolute Maximum Ratings | Collector - Emitter Voltage (VCES) | 1200 | V |
| Gate-Emitter Voltage (VGES) | ±20 | V | |
| DC Collector Current (IC) TC=25 | 150 | A | |
| DC Collector Current (IC) TC=80 | 100 | A | |
| Power Dissipation | Maximum Power Dissipation (PD) (IGBT) TC = 25 | 680 | W |
| Maximum Junction Temperature (TJmax) | 150 | ||
| Temperature Ratings | Operating Temperature (TJOP) | -40 ~ +150 | |
| Storage Temperature (Tstg) | -40 ~ +125 | ||
| Isolation Voltage | Viso (All Terminals Shorted) f=50Hz, 1min | 3000 | V |
| IGBT Electrical Characteristics | Collector-Emitter Breakdown Voltage (V(BR)CES) VGE = 0V, IC = 1mA | 1200 | V |
| Collector Leakage Current (ICES) VCE=VCES, VGE=0V | 100 | uA | |
| Gate Leakage Current (IGES) VCE=0V, VGE=±20V | -400 ~ 400 | nA | |
| Gate - Emitter Threshold Voltage (VGE(th)) VCE=VGE, IC=4mA | 5.0 ~ 6.8 | V | |
| IGBT ON Characteristics | Collector Emitter Saturation Voltage (VCE(sat)) IC=100A,VGE=15V | 1.7 ~ 1.9 | V |
| Collector Emitter Saturation Voltage (VCE(sat)) IC=100A,VGE=15V, TJ=125C | 1.9 ~ 2.1 | V | |
| IGBT Dynamic Characteristics | Input Capacitance (Cies) VCE = 25V, VGE = 0V , f100kHz | 8.3 | nF |
| Output Capacitance (Coes) VCE = 25V, VGE = 0V , f100kHz | 0.29 | nF | |
| IGBT Switching Characteristics (TJ = 25) | Turn-on Delay Time (td(on)) VCC = 600V, IC = 100A, RG = 3.5, VGE =±15V | 129 | ns |
| Rise Time (tr) VCC = 600V, IC = 100A, RG = 3.5, VGE =±15V | 27 | ns | |
| Turn-off Delay Time (td(off)) VCC = 600V, IC = 100A, RG = 3.5, VGE =±15V | 276 | ns | |
| Fall Time (Tf) VCC = 600V, IC = 100A, RG = 3.5, VGE =±15V | 312 | ns | |
| IGBT Switching Losses (TJ = 125) | Turn-on Switching Loss (Eon) VCC = 600V, IC = 100A, RG = 3.5, VGE =±15V | 3.91 | mJ |
| Turn-off Switching Loss (Eoff) VCC = 600V, IC = 100A, RG = 3.5, VGE =±15V | 8.95 | mJ | |
| Gate Charge | Gate Charge (Qge) VCC=600V, IC=100A, VGE=15V | 200 | nC |
| Short Circuit Capability | Short Circuit Safe Operating Area (SCSOA) VCC = 600V, VGE ≤15V, TJ = 125 | 436 | A (10 μs) |
| FWD Electrical Characteristics | Forward Voltage (VFM) IF100A, VGE = 0V TJ = 25 | 1.72 ~ 1.9 | V |
| Forward Voltage (VFM) IF100A, VGE = 0V TJ = 125 | 1.82 ~ 2.1 | V | |
| FWD Dynamic Characteristics | Reverse Recovery Time (trr) IF100A, di/dt =3900A/μs, Vrr = 600V, VGE = -15V TJ = 25 | 110 | ns |
| Reverse Recovery Time (trr) IF100A, di/dt =3900A/μs, Vrr = 600V, VGE = -15V TJ = 125 | 197 | ns | |
| FWD Peak Reverse Recovery Current | Peak Reverse Recovery Current (Irr) TJ = 25 | 108 | A |
| Peak Reverse Recovery Current (Irr) TJ = 125 | 117 | A | |
| FWD Reverse Recovery Charge | Reverse Recovery Charge (Qrr) TJ = 25 | 5.58 | μC |
| Reverse Recovery Charge (Qrr) TJ = 125 | 9.25 | μC | |
| Thermal Resistance | Junction-To-Case (IGBT Part, Per Leg) (RJC) | 0.17 | /W |
| Junction-To-Case (Diode Part, Per Leg) (RJC) | 0.4 | /W | |
| Case-To-Sink (RCS) | 0.1 | /W | |
| Mounting Torque | Power Terminals Screw:M5 (Mt) | 3 ~ 5 | N*m |
| Mounting Screw:M6 (Ms) | 4 ~ 6 | N*m | |
| Weight | Weight Of Module | 150 ~ 160 | g |
2410121308_YANGJIE-MG100HF12MIC1_C781180.pdf
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