Low gate charge N channel MOSFET XYD X1P5N060GHT1 optimized for motor controllers and battery systems
Key Attributes
Model Number:
X1P5N060GHT1
Product Custom Attributes
Mfr. Part #:
X1P5N060GHT1
Package:
TOLL-1L
Product Description
Product Overview
The X1P5N060GHT1 is an N-CHANNEL MOSFET from Xiamen XYDFAB Integrated Circuit Co., Ltd. It features fast switching, low on-resistance (RDS(on) 1.5m), low gate charge, and low reverse transfer capacitances. This MOSFET is designed for applications such as BMS, battery protection, motor controllers, and power management.
Product Attributes
- Brand: Xiamen XYDFAB Integrated Circuit Co., Ltd.
- Product Name: X1P5N060GHT1
- Package: TOLL-1L
- Ordering Code: X1P5N060GHT1
- Marking: X1P5N060GHT1
- Packaging: Tape and Reel
Technical Specifications
| Parameter | Symbol | Values | Unit | Note/Test Conditions | ||
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | - | 60 | V | - | |
| Gate-Source Voltage | VGS | -20 | - | 20 | V | - |
| Continuous Drain Current | ID | - | 356 | A | TC=25 | |
| Continuous Drain Current | ID | - | 225 | A | TC=100 | |
| Pulsed Drain Current | IDM | - | 1424 | A | - | |
| Single Pulse Avalanche Energy | EAS | - | 1207 | mJ | L=0.5mH,VD=48V, TC=25 | |
| Maximum Power Dissipation | PD | - | 337 | W | TC=25 | |
| Maximum Power Dissipation | PD | - | 3.6 | W | TA=25 | |
| Operating Junction and Storage Temperature Range | Tj,TSTG | -50 | - | 150 | - | |
| Thermal Characteristics | ||||||
| Thermal resistance, Junction to Case | Rth(J-c) | - | 0.37 | /W | - | |
| Thermal resistance, Junction to Ambient | Rth(J-a) | - | 34 | - | - | |
| View and Internal Schematic Diagram | ||||||
| TOLL-1L | BVDSS | 60 | V | - | ||
| TOLL-1L | ID | 356 | A | - | ||
| TOLL-1L | RDson(max) | 1.5 | m | - | ||
| TOLL-1L | VGS(th)(Typ | 2.7 | V | - | ||
| Electrical Characteristics | ||||||
| Static characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | 60 | - | - | V | VGS=0V,ID=250A |
| Zero Gate Voltage Drain Current | IDSS | - | 1 | A | VDS=60V,VGS=0V | |
| Gate-Body Leakage Current,Forward | IGSSF | - | 100 | nA | VGS=20V,VDS=0V | |
| Gate-Body Leakage Current,Reverse | IGSSR | - | -100 | nA | VGS=-20V,VDS=0V | |
| Gate-Source Threshold Voltage | VGS(th) | 2 | - | 4 | V | VDS=VGS,ID=250A |
| Drain-Source On-State Resistance | RDS(on) | - | 1.1 | 1.5 | m | VGS=10V,ID=50A |
| Gate Resistance | Rg | - | 3 | - | VGS=0V, VDS=0V, f=1MHz | |
| Forward Transconductance | gfs | - | 70 | - | S | VDS=5V,ID=50A |
| Dynamic characteristics | ||||||
| Input Capacitance | Ciss | - | 5500 | pF | VDS=30V,VGS=0V,f=1.0MHZ | |
| Output Capacitance | Coss | - | 1593 | pF | - | |
| Reverse Transfer Capacitance | Crss | - | 89 | pF | - | |
| Turn-On Delay Time | td(on) | - | 24 | ns | VDD=30V,RG=3,VGS=10V,ID=50A | |
| Turn-On Rise Time | tr | - | 81 | ns | - | |
| Turn-Off Delay Time | td(off) | - | 76 | ns | - | |
| Turn-Off Fall Time | tf | - | 58 | ns | - | |
| Gate charge characteristics | ||||||
| Total Gate Charge | Qg | - | 81 | nC | VDS=30V,ID=50A,VGS=10V | |
| Gate-Source Charge | Qgs | - | 25 | nC | - | |
| Gate-Drain Charge | Qgd | - | 22 | nC | - | |
| Reverse diode | ||||||
| Continuous Diode Forward Current | IS | - | 356 | A | - | |
| Pulsed Diode Forward Current | ISM | - | 1424 | A | - | |
| Diode Forward Voltage | VSD | - | 1.2 | V | IS=50A,VGS=0V | |
| Reverse Recovery Time | trr | - | 53 | ns | VDS=30V,VGS=0V,IS=50A di/dt=100A/s | |
| Reverse Recovery Charge | Qrr | - | 53 | nC | - | |
2509251450_XYD-X1P5N060GHT1_C51952899.pdf
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