Split Gate Trench MOSFET YANGJIE YJG15G15A N Channel Enhancement Mode Transistor for DC DC Converters
Key Attributes
Model Number:
YJG15G15A
Product Custom Attributes
Drain To Source Voltage:
150V
Current - Continuous Drain(Id):
15A
RDS(on):
70mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
5pF
Number:
1 N-channel
Output Capacitance(Coss):
65pF
Input Capacitance(Ciss):
740pF
Pd - Power Dissipation:
50W
Gate Charge(Qg):
13nC@10V
Mfr. Part #:
YJG15G15A
Package:
PDFN5060-8L
Product Description
Product Overview
The YJG15G15A is an N-Channel Enhancement Mode Field Effect Transistor designed with split gate trench MOSFET technology. It offers excellent heat dissipation and a high-density cell design for low RDS(ON). This transistor is suitable for switching voltage regulators and DC-DC converters.
Product Attributes
- Brand: Yangzhou Yangjie Electronic Technology Co., Ltd.
- Model: YJG15G15A
- Technology: Split gate trench MOSFET
- Moisture Sensitivity Level: 1
- Flammability Rating: UL 94 V-0
- Certifications: RoHS compliant
Technical Specifications
| Parameter | Symbol | Conditions | Min | Typ | Max | Unit |
| Absolute Maximum Ratings | ||||||
| Drain-source Voltage | VDS | 150 | V | |||
| Gate-source Voltage | VGS | 20 | V | |||
| Drain Current | ID | TA=25 | 4 | A | ||
| Drain Current | ID | TA=100 | 2.5 | A | ||
| Drain Current | ID | TC=25 | 15 | A | ||
| Drain Current | ID | TC =100 | 9.5 | A | ||
| Pulsed Drain Current | IDM | 40 | A | |||
| Avalanche energy | EAS | TJ=25, VDD=50V, VG=10V, RG=25, L=0.5mH, IAS=4.2A | 4.4 | mJ | ||
| Total Power Dissipation | PD | TA=25 | 2.5 | W | ||
| Total Power Dissipation | PD | TA=100 | 1 | W | ||
| Total Power Dissipation | PD | TC=25 | 50 | W | ||
| Total Power Dissipation | PD | TC =100 | 20 | W | ||
| Junction and Storage Temperature Range | TJ ,TSTG | -55 | +150 | |||
| Thermal Resistance | ||||||
| Thermal Resistance Junction-to-Ambient | RJA | Steady-State | 40 | 50 | /W | |
| Thermal Resistance Junction-to-Case | RJC | Steady-State | 2 | 2.5 | /W | |
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS= 0V, ID=250A | 150 | - | - | V |
| Zero Gate Voltage Drain Current | IDSS | VDS=150V, VGS=0V | - | 1 | A | |
| Zero Gate Voltage Drain Current | IDSS | VDS=150V, VGS=0V, Tj=150 | - | 100 | A | |
| Gate-Body Leakage Current | IGSS | VGS= 20V, VDS=0V | - | 100 | nA | |
| Gate Threshold Voltage | VGS(th) | VDS= VGS, ID=250A | 2 | 3 | 4 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=10V, ID=15A | 52 | 70 | m | |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=6V, ID=10A | 57 | 80 | m | |
| Diode Forward Voltage | VSD | IS=15A, VGS=0V | 0.95 | 1.2 | V | |
| Gate resistance | RG | f=1MHz | 1 | - | ||
| Maximum Body-Diode Continuous Current | IS | - | 15 | A | ||
| Dynamic Parameters | ||||||
| Input Capacitance | Ciss | VDS=75V, VGS=0V, f=1MHz | 740 | - | pF | |
| Output Capacitance | Coss | 65 | - | pF | ||
| Reverse Transfer Capacitance | Crss | 5 | - | pF | ||
| Switching Parameters | ||||||
| Total Gate Charge | Qg | VGS=10V, VDS=75V, ID=15A | 13 | - | nC | |
| Gate-Source Charge | Qgs | 3 | - | nC | ||
| Gate-Drain Charge | Qg d | 4 | - | nC | ||
| Reverse Recovery Charge | Qrr | IF=15A, di/dt=100A/us | 122 | - | nC | |
| Reverse Recovery Time | trr | 62 | - | ns | ||
| Turn-on Delay Time | tD(on) | VGS=10V, VDD=75V, ID=15A RGEN=2.2 | 2 | - | ns | |
| Turn-on Rise Time | tr | 32 | - | |||
| Turn-off Delay Time | tD(off) | 13 | - | |||
| Turn-off fall Time | tf | 3 | - | |||
2401111813_YANGJIE-YJG15G15A_C20605761.pdf
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