IGBT discrete component YANGJIE DGF10N65CTL0 optimized for hard and soft switching in power electronics
Key Attributes
Model Number:
DGF10N65CTL0
Product Custom Attributes
Pd - Power Dissipation:
100W
Td(off):
68ns
Td(on):
10ns
Operating Temperature:
-40℃~+175℃
Collector-Emitter Breakdown Voltage (Vces):
650V
Input Capacitance(Cies):
890pF@25V
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
5V@1mA
Switching Energy(Eoff):
170uJ
Turn-On Energy (Eon):
360uJ
Mfr. Part #:
DGF10N65CTL0
Package:
TO-220F
Product Description
Product Overview
The DGF10N65CTL0 is a high-speed, smooth switching IGBT discrete device designed for both hard and soft switching applications. It features a maximum junction temperature of 175, a positive temperature coefficient, and high ruggedness with temperature stability. This device is suitable for applications such as soft switching, air conditioning, and motor drive inverters.
Product Attributes
- Brand: 21yangjie
- Certifications: RoHS Compliant
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
| Maximum Ratings | ||||||
| Collector-Emitter Breakdown Voltage | VCE | 650 | V | |||
| Collector Current, limited by Tjmax | IC | TC= 25C | 20 | A | ||
| Collector Current, limited by Tjmax | IC | TC= 100C | 10 | A | ||
| Diode Forward Current, limited by Tjmax | IF | TC= 25C | 20 | A | ||
| Diode Forward Current, limited by Tjmax | IF | TC= 100C | 10 | A | ||
| Continuous Gate-Emitter Voltage | VGE | 20 | V | |||
| Transient Gate-Emitter Voltage (tp10s,D<0.010) | VGE | 30 | V | |||
| Turn off Safe Operating Area | VCE600V, Tj 150C | 40 | A | |||
| Pulsed Collector Current, VGE=15V, tp limited by Tjmax | ICM | 40 | A | |||
| Short Circuit Withstand Time, VGE= 15V, VCE 400V | Tsc | 5 | s | |||
| Diode Pulsed Current, tp limited by Tjmax | IFpuls | 40 | A | |||
| Power Dissipation , Tj=175C,Tc=25C | Ptot | 100 | W | |||
| Electrical Characteristics of the IGBT | ||||||
| Static Collector-Emitter Breakdown Voltage | BVCES | VGE=0V, IC=250A | 650 | - | - | V |
| Gate Threshold Voltage | VGE(th) | VGE=VCE, IC=1mA | 5.0 | 5.8 | 6.5 | V |
| Collector-Emitter Saturation Voltage | VCE(sat) | VGE=15V, IC=10A Tj=25C | 1.40 | - | V | |
| Collector-Emitter Saturation Voltage | VCE(sat) | VGE=15V, IC=10A Tj=125C | 1.55 | - | V | |
| Collector-Emitter Saturation Voltage | VCE(sat) | VGE=15V, IC=10A Tj=150C | 1.60 | 1.70 | V | |
| Zero Gate Voltage Collector Current | ICES | VCE=650V, VGE=0V Tj= 25C | 0.25 | - | mA | |
| Zero Gate Voltage Collector Current | ICES | VCE=650V, VGE=0V Tj=150C | 1.00 | - | mA | |
| Gate-Emitter Leakage Current | IGES | VCE= 0V, VGE= 20V | 200 | nA | ||
| Input Capacitance | Cies | VCE= 25V, VGE= 0V, f = 1MHz | 0.89 | - | nF | |
| Output capacitance | Coes | 0.04 | - | nF | ||
| Reverse Transfer Capacitance | Cres | 0.01 | - | nF | ||
| Gate Charge | QG | VCC=300V,IC=10A, VGE=15V | 0.059 | - | uC | |
| Short circuit collector current | ICSC | VGE=15V,tSC5us VCC=400V, Tj,start=25C | 110 | - | A | |
| Operating Junction Temperature | Tj | -40 | +175 | C | ||
| Storage Temperature | Ts | -55 | +150 | C | ||
| Soldering Temperature, wave soldering | 1.6mm (0.063in.) from case for 10s | 260 | C | |||
| Electrical Characteristics of the Diode | ||||||
| Diode Forward Voltage | VF | IF= 10A Tj= 25C | 1.70 | 2.20 | V | |
| Diode Forward Voltage | VF | IF= 10A Tj= 125C | 1.50 | - | V | |
| Diode Forward Voltage | VF | IF= 10A Tj= 150C | 1.40 | - | V | |
| Switching Characteristic, Inductive Load | ||||||
| Turn-on Delay Time | td(on) | Tj=25C VCC= 300V, IC=10A, VGE=-5V~15V, Rg=51 | 10 | - | ns | |
| Rise Time | tr | Tj=25C VCC= 300V, IC=10A, VGE=-5V~15V, Rg=51 | 26 | - | ns | |
| Turn-on Energy | Eon | Tj=25C VCC= 300V, IC=10A, VGE=-5V~15V, Rg=51 | 0.36 | - | mJ | |
| Turn-off Delay Time | td(off) | Tj=25C VCC= 300V, IC=10A, VGE=-5V~15V, Rg=51 | 68 | - | ns | |
| Fall Time | tf | Tj=25C VCC= 300V, IC=10A, VGE=-5V~15V, Rg=51 | 135 | - | ns | |
| Turn-off Energy | Eoff | Tj=25C VCC= 300V, IC=10A, VGE=-5V~15V, Rg=51 | 0.17 | - | mJ | |
| Turn-on Delay Time | td(on) | Tj=125C VCC= 300V, IC=10A, VGE=-5V~15V, Rg=51 | 14 | - | ns | |
| Rise Time | tr | Tj=125C VCC= 300V, IC=10A, VGE=-5V~15V, Rg=51 | 35 | - | ns | |
| Turn-on Energy | Eon | Tj=125C VCC= 300V, IC=10A, VGE=-5V~15V, Rg=51 | 0.42 | - | mJ | |
| Turn-off Delay Time | td(off) | Tj=125C VCC= 300V, IC=10A, VGE=-5V~15V, Rg=51 | 68 | - | ns | |
| Fall Time | tf | Tj=125C VCC= 300V, IC=10A, VGE=-5V~15V, Rg=51 | 162 | - | ns | |
| Turn-off Energy | Eoff | Tj=125C VCC= 300V, IC=10A, VGE=-5V~15V, Rg=51 | 0.29 | - | mJ | |
| Turn-on Delay Time | td(on) | Tj=150C VCC= 300V, IC=10A, VGE=-5V~15V, Rg=51 | 16 | - | ns | |
| Rise Time | tr | Tj=150C VCC= 300V, IC=10A, VGE=-5V~15V, Rg=51 | 41 | - | ns | |
| Turn-on Energy | Eon | Tj=150C VCC= 300V, IC=10A, VGE=-5V~15V, Rg=51 | 0.46 | - | mJ | |
| Turn-off Delay Time | td(off) | Tj=150C VCC= 300V, IC=10A, VGE=-5V~15V, Rg=51 | 69 | - | ns | |
| Fall Time | tf | Tj=150C VCC= 300V, IC=10A, VGE=-5V~15V, Rg=51 | 181 | - | ns | |
| Turn-off Energy | Eoff | Tj=150C VCC= 300V, IC=10A, VGE=-5V~15V, Rg=51 | 0.33 | - | mJ | |
| Electrical Characteristics of the DIODE | ||||||
| Reverse Recovery Current | Irr | IF=10A, VR=300V, -di/dt= 400A/s, Tj= 25 | 9 | - | A | |
| Reverse Recovery Charge | Qrr | IF=10A, VR=300V, -di/dt= 400A/s, Tj= 25 | 0.16 | - | uC | |
| Reverse Recovery Energy | Erec | IF=10A, VR=300V, -di/dt= 400A/s, Tj= 25 | 0.05 | - | mJ | |
| Reverse Recovery Current | Irr | IF=10A, VR=300V, -di/dt= 400A/s, Tj= 125 | 12 | - | A | |
| Reverse Recovery Charge | Qrr | IF=10A, VR=300V, -di/dt= 400A/s, Tj= 125 | 0.63 | - | uC | |
| Reverse Recovery Energy | Erec | IF=10A, VR=300V, -di/dt= 400A/s, Tj= 125 | 0.16 | - | mJ | |
| Reverse Recovery Current | Irr | IF=10A, VR=300V, -di/dt= 400A/s, Tj= 150 | 14 | - | A | |
| Reverse Recovery Charge | Qrr | IF=10A, VR=300V, -di/dt= 400A/s, Tj= 150 | 0.85 | - | uC | |
| Reverse Recovery Energy | Erec | IF=10A, VR=300V, -di/dt= 400A/s, Tj= 150 | 0.19 | - | mJ | |
| Thermal Resistance | ||||||
| IGBT Thermal Resistance, Junction - Case | Rth(j-c) | 4.8 | K/W | |||
| Diode Thermal Resistance, Junction - Case | Rth(j-c) | 6.0 | K/W | |||
| Thermal Resistance, Junction - Ambient | Rth(j-a) | 60 | K/W | |||
2411220011_YANGJIE-DGF10N65CTL0_C20600400.pdf
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