High power IGBT module YANGJIE MG200HF12TLC2 with trench technology and high short circuit capability
Key Attributes
Model Number:
MG200HF12TLC2
Product Custom Attributes
Pd - Power Dissipation:
1.25kW
Td(off):
266ns
Td(on):
187ns
Operating Temperature:
-40℃~+150℃
Collector-Emitter Breakdown Voltage (Vces):
1.2kV
Reverse Transfer Capacitance (Cres):
0.5nF
Input Capacitance(Cies):
12.8nF
IGBT Type:
IGBT Module
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
5V@7.6mA
Gate Charge(Qg):
1.2uC
Pulsed Current- Forward(Ifm):
400A
Switching Energy(Eoff):
12.9mJ
Turn-On Energy (Eon):
21.1mJ
Mfr. Part #:
MG200HF12TLC2
Product Description
Product Overview
The MG200HF12TLC2 S-M400 is a high-performance IGBT module designed for demanding industrial applications. It features low VCE(sat) with Trench technology, positive temperature coefficient for VCE(sat), and high short circuit capability. Integrated with an ultra-fast and soft recovery anti-parallel FWD, this module offers low inductance and a maximum junction temperature of 175. It is ideal for motor drive inverters, AC/DC servo drive amplifiers, Uninterruptible Power Supplies (UPS), and soft switching welding machines.
Product Attributes
- Brand: Yangjie
- Certifications: RoHS Compliant
Technical Specifications
| Parameter | Symbol | Conditions | Value Unit | Min. | Typ. | Max. |
| IGBT Absolute Maximum Ratings | ||||||
| Collector-Emitter Voltage | VCES | VGE=0V, IC=1mA, Tvj=25 | 1200 V | |||
| Continuous Collector Current | IC | TC=100 | 200 A | |||
| Repetitive Peak Collector Current | ICRM | tp=1ms | 400 A | |||
| Gate-Emitter Voltage | VGES | Tvj=25 | ±20 V | |||
| Total Power Dissipation | Ptot | TC=25, Tvjmax=175 | 1250 W | |||
| IGBT Characteristic Values | ||||||
| Gate-Emitter Threshold Voltage | VGE(th) | VGE=VCE, IC=7.6mA,Tvj=25 | V | 5.0 | 5.8 | 6.5 |
| Collector-Emitter Cut-off Current | ICES | VCE=1200V,VGE=0V,Tvj=25 | mA | 1.0 | ||
| Collector-Emitter Saturation Voltage | VCE(sat) | IC=200A,VGE=15V, Tvj=25 | V | 1.90 | 2.20 | |
| Collector-Emitter Saturation Voltage | VCE(sat) | IC=200A,VGE=15V, Tvj=125 | V | 2.20 | ||
| Collector-Emitter Saturation Voltage | VCE(sat) | IC=200A,VGE=15V, Tvj=150 | V | 2.30 | ||
| Gate Charge | QG | uC | 1.2 | |||
| Internal Gate Resistor | RGint | Ω | 3.8 | |||
| Input Capacitance | Cies | VCE=25V,VGE=0V, f=1MHz,Tvj=25 | nF | 12.8 | ||
| Reverse Transfer Capacitance | Cres | nF | 0.5 | |||
| Gate-Emitter leakage current | IGES | VCE=0V, VGE=20V,Tvj=25 | nA | 400 | ||
| Turn-on Delay Time | td(on) | IC=200A, VCE=600V, VGE =±15V, RG=3.6Ω, Tvj=25 | ns | 187 | ||
| Rise Time | tr | IC=200A, VCE=600V, VGE =±15V, RG=3.6Ω, Tvj=25 | ns | 62 | ||
| Turn-off Delay Time | td(off) | IC=200A, VCE=600V, VGE =±15V, RG=3.6Ω, Tvj=25 | ns | 266 | ||
| Fall Time | tf | IC=200A, VCE=600V, VGE =±15V, RG=3.6Ω, Tvj=25 | ns | 179 | ||
| Energy Dissipation During Turn-on Time | Eon | IC=200A, VCE=600V, VGE =±15V, RG=3.6Ω, Tvj=25 | mJ | 21.1 | ||
| Energy Dissipation During Turn-off Time | Eoff | IC=200A, VCE=600V, VGE =±15V, RG=3.6Ω, Tvj=25 | mJ | 12.9 | ||
| Turn-on Delay Time | td(on) | IC=200A, VCE=600V, VGE =±15V, RG=3.6Ω, Tvj=150 | ns | 192 | ||
| Rise Time | tr | IC=200A, VCE=600V, VGE =±15V, RG=3.6Ω, Tvj=150 | ns | 71 | ||
| Turn-off Delay Time | td(off) | IC=200A, VCE=600V, VGE =±15V, RG=3.6Ω, Tvj=150 | ns | 311 | ||
| Fall Time | tf | IC=200A, VCE=600V, VGE =±15V, RG=3.6Ω, Tvj=150 | ns | 265 | ||
| Energy Dissipation During Turn-on Time | Eon | IC=200A, VCE=600V, VGE =±15V, RG=3.6Ω, Tvj=150 | mJ | 32.7 | ||
| Energy Dissipation During Turn-off Time | Eoff | IC=200A, VCE=600V, VGE =±15V, RG=3.6Ω, Tvj=150 | mJ | 17.8 | ||
| SC Data | Isc | tp≤10us,VGE=15V, Tvj=150,VCC=600V, VCEM≤1200V | A | 800 | ||
| Diode Absolute Maximum Ratings | ||||||
| Repetitive Peak Reverse Voltage | VRRM | Tvj=25 | 1200 V | |||
| Continuous DC Forward Current | IF | 200 A | ||||
| Repetitive Peak Forward Current | IFRM | tp=1ms | 400 A | |||
| Diode Characteristic Values | ||||||
| Forward Voltage | VF | IF=200A,Tvj=25 | V | 2.00 | 2.80 | |
| Forward Voltage | VF | IF=200A,Tvj=125 | V | 1.85 | ||
| Forward Voltage | VF | IF=200A,Tvj=150 | V | 1.80 | ||
| Recovered Charge | Qrr | IF=200A, VR=600V, -diF/dt =2400A/us, Tvj=25 | uC | 13.0 | ||
| Peak Reverse Recovery Current | Irr | IF=200A, VR=600V, -diF/dt =2400A/us, Tvj=25 | A | 86 | ||
| Reverse Recovery Energy | Erec | IF=200A, VR=600V, -diF/dt =2400A/us, Tvj=25 | mJ | 3.9 | ||
| Recovered Charge | Qrr | IF=200A, VR=600V, -diF/dt =2400A/us, Tvj=150 | uC | 39.2 | ||
| Peak Reverse Recovery Current | Irr | IF=200A, VR=600V, -diF/dt =2400A/us, Tvj=150 | A | 137 | ||
| Reverse Recovery Energy | Erec | IF=200A, VR=600V, -diF/dt =2400A/us, Tvj=150 | mJ | 13.1 | ||
| Module Characteristics | ||||||
| Isolation Voltage | Visol | t=1min,f=50Hz | V | 2500 | ||
| Maximum Junction Temperature | Tjmax | 175 | ||||
| Operating Junction Temperature | Tvj op | -40 | 150 | |||
| Storage Temperature | Tstg | -40 | 125 | |||
| Thermal Resistance Junction to Case | RθJC | per IGBT | K/W | 0.12 | ||
| Thermal Resistance Junction to Case | RθJC | per Diode | K/W | 0.20 | ||
| Thermal Resistance Case to Sink | RθCS | Conductive grease applied | K/W | 0.012 | 0.035 | |
| Comparative Tracking Index | CTI | 400 | ||||
| Module Electrodes Torque | Mt | Recommended(M6) | N·m | 3.0 | 5.0 | |
| Module-to-Sink Torque | Ms | Recommended(M6) | N·m | 3.0 | 5.0 | |
| Weight of Module | G | g | 315 | |||
2508211052_YANGJIE-MG200HF12TLC2_C2942694.pdf
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