ASA65R220E Silicon N Channel MOSFET for Power Switching in Server Power Telecom and UPS Applications
Key Attributes
Model Number:
ASA65R220E
Product Custom Attributes
Drain To Source Voltage:
650V
Current - Continuous Drain(Id):
20A
RDS(on):
190mΩ
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
3.5V
Reverse Transfer Capacitance (Crss@Vds):
5.28pF
Input Capacitance(Ciss):
1.547nF
Pd - Power Dissipation:
33W
Gate Charge(Qg):
32.23nC
Mfr. Part #:
ASA65R220E
Package:
TO-220F
Product Description
Product Overview
The ASA65R220E and ASB65R220E are N-Channel Silicon MOSFETs designed for power switching applications. They offer a low drain-source on-resistance and easy gate control, making them suitable for various power supply topologies including Boost PFC, single-ended flyback, two-transistor forward, half bridge, asymmetric half bridge, and series resonance half bridge. These MOSFETs are ideal for PC power supplies, adapters, LCD & PDP TVs, LED lighting, server power, telecom power, and UPS applications.
Product Attributes
- Brand: Not explicitly stated, but implied by model numbers ASA65R220E and ASB65R220E.
- Type: Silicon N-Channel MOS
- Mode: Enhancement mode
Technical Specifications
| Part Name | Package | Marking | VDS @Tj,max (V) | RDS(on),max (m) | Qg,typ (nC) | ID,pulse (A) |
|---|---|---|---|---|---|---|
| ASA65R220E | TO220F | ASA65R220E | 700 | 220 | 32.23 | 60 |
| ASB65R220E | TO263 | ASB65R220E | 700 | 220 | 32.23 | 60 |
| Parameter | Symbol | Value | Unit | Note / Test Condition |
|---|---|---|---|---|
| Drain-source breakdown voltage | V(BR)DSS | 650 | V | VGS=0V,ID=250uA |
| Gate threshold voltage | V(GS)th | 2.8 - 4.2 | V | VDS=VGS,ID=250uA |
| Drain-source on-state resistance | RDS(on) | 0.19 - 0.22 | VGS=10V,ID=7A,Tj=25C | |
| Continuous drain current | ID | - 20 | A | TC=25C, Limited by Tj,max. Maximum Duty Cycle D=0.50 |
| Pulsed drain current | ID,pulse | - 60 | A | TC=25C, Pulse width tp limited by Tj,max |
| Avalanche energy, single pulse | EAS | - 830 | mJ | Tc=25,VDD=50V,L=10mH, RG=25 |
| Input capacitance | Ciss | - 1547 | pF | VGS=0V, VDS=50V, f=10kHz |
| Output capacitance | Coss | - 134 | pF | VGS=0V, VDS=50V, f=10kHz |
| Reverse transfer capacitance | Crss | - 5.28 | pF | VGS=0V, VDS=50V, f=10kHz |
| Gate charge total | Qg | - 32.23 | nC | VDD=400V,ID=8A,VGS=0to 10V |
| Diode forward voltage | VSD | - 0.72 | V | VGS=0V,IF=1A,Tj=25C |
| Reverse recovery time | trr | - 275 | ns | VR=400V,IF=8A,diF/dt=100A/s |
| Reverse recovery charge | Qrr | - 3.809 | C | VR=400V,IF=8A,diF/dt=100A/s |
| Power dissipation (TO220F) | Ptot | - 33 | W | TC=25C |
| Power dissipation (TO263) | Ptot | - 126 | W | TC=25C |
| Storage temperature | Tstg | -55 - 150 | C | - |
| Operating junction temperature | Tj | -55 - 150 | C | - |
2410121521_ANHI-ASA65R220E_C7494987.pdf
Related Products
NPN transistor YTL MMBTH10 with 30V collector base breakdown voltage and 650MHz transition frequency
Product OverviewThe MMBTH10 is an NPN transistor in a SOT-23 package, designed for general-purpose applications. It offers a breakdown voltage of 30V (V(BR)CBO) and 25V (V(BR)CEO), with a DC current gain (hFE) of 60 at 10V VCE and 4mA IC. Its low collector-emitter saturation voltage (VCE(sat)) of 0...
Glass passivated chip diode YONGYUTAI MB8S offering performance in power supply and rectification circuits
Product OverviewThis series of glass passivated chip junction diodes offers a wide range of reverse voltage capabilities from 100V to 1000V, with a forward current of 0.8A and high surge current capability. Designed for surface mount applications, these diodes are suitable for various power supply ...
Power Field Effect Transistor XDS TX15N10B N Channel MOSFET Suitable for Battery Powered Circuits
Product DescriptionThe TX15N10B is an N-Channel logic enhancement mode power field-effect transistor utilizing high cell density, DMOS trench technology. This advanced process minimizes on-state resistance, making the device particularly suitable for low-voltage applications such as cellular phones, ...
Low voltage N channel MOSFET XCH GSW25N65EF Multi EPI Super Junction for power conversion solutions
Product OverviewThe GSW/GSA25N65EF is a low voltage N-channel Multi-EPI Super-Junction power MOSFET from XCH Semiconductor. It features advanced technology for enhanced characteristics such as fast switching times, low Ciss and Crss, low on-resistance, and excellent avalanche characteristics. This ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
