650 Volt N Channel VDMOSFET A Power microelectronics AP4N65D for Power Switching and UPS Applications
Key Attributes
Model Number:
AP4N65D
Product Custom Attributes
Drain To Source Voltage:
650V
Current - Continuous Drain(Id):
4A
RDS(on):
2.4Ω@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
10.9pF
Number:
1 N-channel
Output Capacitance(Coss):
69.5pF
Pd - Power Dissipation:
36W
Input Capacitance(Ciss):
580pF
Gate Charge(Qg):
15nC@10V
Mfr. Part #:
AP4N65D
Package:
TO-252-3L
Product Description
Product Overview
The AP4N65D/Y is a 650V N-Channel Enhancement Mode VDMOSFET manufactured using a self-aligned planar technology. This technology enhances performance by reducing conduction losses, improving switching characteristics, and increasing avalanche energy. It is suitable for various power switching circuits, including Uninterruptible Power Supplies (UPS) and Power Factor Correction (PFC) applications.
Product Attributes
- Brand: APM Microelectronics ()
- Technology: Silicon N-Channel Enhanced VDMOSFET, Self-aligned Planar Technology
- Package Type: TO-252-3L, TO-251-3L
Technical Specifications
| Model | VDS (V) | ID (A) | RDS(ON) () @ VGS=10V | Package | Pack Marking | Qty (PCS) |
|---|---|---|---|---|---|---|
| AP4N65D | 650 | 4 | < 2.4 | TO-252-3L | AP4N65D XXX YYYY | 2500 |
| AP4N65Y | 650 | 4 | < 2.4 | TO-251-3L | AP4N65Y XXX YYYY | 1000 |
Absolute Maximum Ratings (TC = 25C, unless otherwise noted)
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Drain-Source Voltage (VGS = 0V) | VDSS | 650 | V |
| Continuous Drain Current | ID | 4 | A |
| Pulsed Drain Current (note1) | IDM | 16 | A |
| Gate-Source Voltage | VGSS | ±30 | V |
| Single Pulse Avalanche Energy (note2) | EAS | 160 | mJ |
| Avalanche Current (note1) | IAR | 4 | A |
| Repetitive Avalanche Energy (note1) | EAR | 20 | mJ |
| Power Dissipation (TC = 25C) | PD | 36 | W |
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55~+150 | C |
| Thermal Resistance, Junction-to-Case | RthJC | 3.47 | K/W |
| Thermal Resistance, Junction-to-Ambient | RthJA | 62.5 | K/W |
Electrical Characteristics (TA=25 unless otherwise noted)
| Parameter | Symbol | Test Conditions | Min. | Type | Max. | Unit |
|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS = 0V, ID = 250µA | 650 | -- | -- | V |
| Zero Gate Voltage Drain Current | IDSS | VDS = 650V, VGS = 0V, TJ = 25ºC | -- | -- | 1 | µA |
| Gate-Source Leakage | IGSS | VGS = ±30V | -- | -- | ±100 | nA |
| Gate-Source Threshold Voltage | VGS(th) | VDS = VGS, ID = 250µA | 3.0 | -- | 4.0 | V |
| Drain-Source On-Resistance | RDS(on) | VGS = 10V, ID = 2.0A (Note3) | -- | 2 | 2.4 | Ω |
| Input Capacitance | Ciss | VGS = 0V, VDS = 25V, f = 1.0MHz | -- | 580 | -- | pF |
| Output Capacitance | Coss | VGS = 0V, VDS = 25V, f = 1.0MHz | -- | 69.5 | -- | pF |
| Reverse Transfer Capacitance | Crss | VGS = 0V, VDS = 25V, f = 1.0MHz | -- | 10.9 | -- | pF |
| Total Gate Charge | Qg | VDD = 520V, ID = 4.0A, VGS = 10V | -- | 15 | -- | nC |
| Gate-Source Charge | Qgs | VDD = 520V, ID = 4.0A, VGS = 10V | -- | 2.5 | -- | nC |
| Gate-Drain Charge | Qgd | VDD = 520V, ID = 4.0A, VGS = 10V | -- | 7.5 | -- | nC |
| Turn-on Delay Time | td(on) | VDD = 400V, ID =4.0A, RG = 25 Ω | -- | 12 | -- | ns |
| Turn-on Rise Time | tr | VDD = 400V, ID =4.0A, RG = 25 Ω | -- | 22 | -- | ns |
| Turn-off Delay Time | td(off) | VDD = 400V, ID =4.0A, RG = 25 Ω | -- | 50 | -- | ns |
| Turn-off Fall Time | tf | VDD = 400V, ID =4.0A, RG = 25 Ω | -- | 48 | -- | ns |
| Continuous Body Diode Current | IS | TC = 25 ºC | -- | -- | 4 | A |
| Pulsed Diode Forward Current | ISM | TC = 25 ºC | -- | -- | 16 | A |
| Body Diode Voltage | VSD | TJ = 25ºC, ISD = 4.0A, VGS = 0V | -- | -- | 1.4 | V |
| Reverse Recovery Time | trr | VGS = 0V, IS = 4.0A, diF/dt =100A /µs | -- | 250 | -- | ns |
| Reverse Recovery Charge | Qrr | VGS = 0V, IS = 4.0A, diF/dt =100A /µs | -- | 3.5 | -- | µC |
Package Mechanical Data (TO-252-3L)
| Ref | Min. | Typ. | Max. | Min. | Typ. | Max. |
|---|---|---|---|---|---|---|
| Millimeters | Millimeters | Millimeters | Inches | Inches | Inches | |
| A | 2.10 | 0.083 | ||||
| A2 | 0.66 | 0.026 | ||||
| B | 0.40 | 0.60 | 0.016 | 0.024 | ||
| C | 2.50 | 0.098 | ||||
| D | 0.10 | 0.004 | ||||
| E | 0.86 | 0.034 | ||||
| G | 0.60 | 0.024 | ||||
| H | 6.40 | 9.50 | 10.70 | 0.252 | 0.374 | 0.421 |
| L | 5.90 | 6.30 | 0.232 | 0.248 | ||
| L2 | 0° 6° 7° | 0° 6° 7° | ||||
| V1 | 4.47 | 4.67 | 0.176 | 0.184 | ||
| V2 | 1.09 | 1.21 | 0.043 | 0.048 |
Package Mechanical Data (Reel Specification - TO-252)
| Ref | Min. | Typ. | Max. | Min. | Typ. | Max. |
|---|---|---|---|---|---|---|
| Millimeters | Millimeters | Millimeters | Inches | Inches | Inches | |
| W | 15.90 | 16.10 | 0.626 | 0.634 | ||
| E | 1.65 | 1.85 | 0.065 | 0.073 | ||
| F | 7.40 | 7.60 | 0.291 | 0.299 | ||
| D0 | 1.40 | 1.60 | 0.055 | 0.063 | ||
| D1 | 1.60 | 0.063 | ||||
| P0 | 7.90 | 8.10 | 0.311 | 0.319 | ||
| P1 | 10.45 | 10.60 | 0.411 | 0.417 | ||
| P2 | 2.78 | 0.109 | ||||
| A0 | 1.40 | 1.60 | 0.055 | 0.063 | ||
| B0 | 3.90 | 4.10 | 0.154 | 0.161 | ||
| K0 | 6.90 | 7.00 | 0.271 | 0.276 | ||
| T | 0.10 | 0.004 | ||||
| t1 | 0.10 | 0.004 |
2410121327_A-Power-microelectronics-AP4N65D_C3011405.pdf
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