power supply design using ANHI ASA70R240E silicon n channel mosfet with low drain source resistance
Key Attributes
Model Number:
ASA70R240E
Product Custom Attributes
Drain To Source Voltage:
750V
Current - Continuous Drain(Id):
20A
Operating Temperature -:
-55℃~+150℃
RDS(on):
240mΩ
Gate Threshold Voltage (Vgs(th)):
3.5V
Reverse Transfer Capacitance (Crss@Vds):
5.28pF@50V
Number:
1 N-channel
Input Capacitance(Ciss):
1.547nF@50V
Pd - Power Dissipation:
33W
Gate Charge(Qg):
32.23nC
Mfr. Part #:
ASA70R240E
Package:
TO-220F
Product Description
Product Overview
The ASA70R240E is a Silicon N-Channel MOS MOSFET designed for efficient power conversion in single-ended flyback or two-transistor forward topologies. It is ideal for applications such as PC power supplies, power adapters, LCD & PDP TVs, and LED lighting. Key features include a low drain-source on-resistance of 0.211 (typ.) and easy gate switching control, operating in enhancement mode with a threshold voltage (Vth) of 2.8 to 4.2 V.
Product Attributes
- Brand: Not specified
- Origin: Not specified
- Material: Silicon N-Channel MOS
- Color: Not specified
- Certifications: Not specified
Technical Specifications
Key Performance Parameters
| Parameter | Value | Unit |
|---|---|---|
| VDS @ Tj,max | 750 | V |
| RDS(on),max | 240 | m |
| Qg,typ | 32.23 | nC |
| ID,pulse | 60 | A |
Maximum Ratings
| Parameter | Symbol | Min. | Typ. | Max. | Unit | Note / Test Condition |
|---|---|---|---|---|---|---|
| Continuous drain current | ID | - | - | 20 | A | TC=25C, Limited by Tj,max. Maximum Duty Cycle D = 0.50 |
| Pulsed drain current | ID,pulse | - | - | 60 | A | TC=25C, Pulse width tp limited by Tj,max |
| Avalanche energy, single pulse | EAS | - | - | 898 | mJ | |
| MOSFET dv/dt ruggedness | dv/dt | - | - | 69 | V/ns | VDS=0...400V |
| Gate source voltage (static) | VGS | -20 | - | 20 | V | static |
| Gate source voltage (dynamic) | VGS | -30 | - | 30 | V | AC (f>1 Hz) |
| Power dissipation | Ptot | - | - | 33 | W | TC=25C |
| Storage temperature | Tstg | -55 | - | 150 | C | |
| Operating junction temperature | Tj | -55 | - | 150 | C | |
| Reverse diode dv/dt | dv/dt | - | - | 15 | V/ns | VDS=0...400V, ISD<=48A, Tj=25C |
Thermal Characteristics
| Parameter | Symbol | Min. | Typ. | Max. | Unit | Note / Test Condition |
|---|---|---|---|---|---|---|
| Thermal resistance, junction - case | RthJC | - | - | 3.8 | C/W | |
| Thermal resistance, junction - ambient | RthJA | - | - | 80 | C/W | device on PCB, minimal footprint |
Static Characteristics
| Parameter | Symbol | Min. | Typ. | Max. | Unit | Note / Test Condition |
|---|---|---|---|---|---|---|
| Drain-source breakdown voltage | V(BR)DSS | 705 | - | - | V | VGS=0V, ID=10mA |
| Gate threshold voltage | V(GS)th | 2.8 | - | 4.2 | V | VDS=VGS, ID=250uA |
| Zero gate voltage drain current | IDSS | - | - | 100 | nA | VDS=700V, VGS=0V, Tj=25C |
| Gate-source leakage current | IGSS | - | - | 100 | nA | VGS=30V, VDS=0V |
| Drain-source on-state resistance | RDS(on) | - | 0.211 | 0.24 | VGS=10V, ID=10A, Tj=25C | |
| Gate resistance (Intrinsic) | RG | - | 11.1 | - | f=1MHz, open drain |
Dynamic Characteristics
| Parameter | Symbol | Min. | Typ. | Max. | Unit | Note / Test Condition |
|---|---|---|---|---|---|---|
| Input capacitance | Ciss | - | 1547 | - | pF | VGS=0V, VDS=50V, f=10kHz |
| Output capacitance | Coss | - | 134 | - | pF | VGS=0V, VDS=50V, f=10kHz |
| Reverse transfer capacitance | Crss | - | 5.28 | - | pF | VGS=0V, VDS=50V, f=10kHz |
| Turn-on delay time | td(on) | - | 12.4 | - | ns | VDD=400V,VGS=13V,ID=8A, RG=3.4 |
| Rise time | tr | - | 21.6 | - | ns | VDD=400V,VGS=13V,ID=8A, RG=3.4 |
| Turn-off delay time | td(off) | - | 52 | - | ns | VDD=400V,VGS=13V,ID=8A, RG=3.4 |
| Fall time | tf | - | 18.8 | - | ns | VDD=400V,VGS=13V,ID=8A, RG=3.4 |
Gate Charge Characteristics
| Parameter | Symbol | Min. | Typ. | Max. | Unit | Note / Test Condition |
|---|---|---|---|---|---|---|
| Gate to source charge | Qgs | - | 8.242 | - | nC | VDD=400V, ID=8A, VGS=0 to 10V |
| Gate to drain charge | Qgd | - | 10.85 | - | nC | VDD=400V, ID=8A, VGS=0 to 10V |
| Gate charge total | Qg | - | 32.23 | - | nC | VDD=400V, ID=8A, VGS=0 to 10V |
| Gate plateau voltage | Vplateau | - | 5.7 | - | V | VDD=400V, ID=8A, VGS=0 to 10V |
Reverse Diode Characteristics
| Parameter | Symbol | Min. | Typ. | Max. | Unit | Note / Test Condition |
|---|---|---|---|---|---|---|
| Diode forward voltage | VSD | - | 0.72 | - | V | VGS=0V, IF=1A, Tj=25C |
| Reverse recovery time | trr | - | 275 | - | ns | VR=400V, IF=8 A, diF/dt=100A/s |
| Reverse recovery charge | Qrr | - | 3.809 | - | uC | VR=400V, IF=8 A, diF/dt=100A/s |
| Peak reverse recovery current | Irrm | - | 25.6 | - | A | VR=400V, IF=8 A, diF/dt=100A/s |
Package Outline
PG-TO220F
Revision History
| Revision | Date | Subjects (major changes since last revision) |
|---|---|---|
| 0.1 | 2019-5-08 | Preliminary version |
| 1.0 | 2019-11-07 | Fine tune outline and add Crss test data.etc |
2410121550_ANHI-ASA70R240E_C5440042.pdf
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