850V NChannel depletion mode MOSFET ARK micro DMS8515E designed for operation in various electronic circuits
Key Attributes
Model Number:
DMS8515E
Product Custom Attributes
Drain To Source Voltage:
850V
Current - Continuous Drain(Id):
200mA
Operating Temperature -:
-55℃~+150℃
RDS(on):
30Ω@0V
Gate Threshold Voltage (Vgs(th)):
4V
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
4.1pF
Output Capacitance(Coss):
20.7pF
Pd - Power Dissipation:
1.5W
Input Capacitance(Ciss):
393.4pF
Gate Charge(Qg):
13.6nC
Mfr. Part #:
DMS8515E
Package:
SOT-223
Product Description
DMS8515E 850V N-Channel Depletion-Mode Power MOSFET
The DMS8515E is an 850V N-Channel Depletion-Mode Power MOSFET designed for various applications requiring high breakdown voltage and fast switching speeds. It features a depletion mode (normally on) operation, ESD improved capability, and a rugged polysilicon gate cell structure built with proprietary advanced planar technology. This MOSFET is suitable for use in audio amplifiers, start-up circuits, protection circuits, ramp generators, current regulators, and active loads.
Product Attributes
- Brand: ARK Microelectronics Co., Ltd.
- Certifications: RoHS Compliant, Halogen-free Available
Technical Specifications
| Parameter | Symbol | Min. | Typ. | Max. | Unit | Test Conditions |
| Drain-to-Source Breakdown Voltage | BVDSX | 850 | -- | -- | V | VGS=-10V, ID=250A |
| Continuous Drain Current | ID | -- | -- | 0.2 | A | TA=25 |
| Pulsed Drain Current | IDM | -- | -- | 0.8 | A | TA=25 |
| Power Dissipation | PD | -- | -- | 1.5 | W | TA=25 |
| Gate-to-Source Voltage | VGS | -- | -- | 20 | V | TA=25 |
| Drain-to-Source Leakage Current | ID(OFF) | -- | -- | 10 | A | VDS=850V, VGS=-10V |
| Gate-to-Source Leakage Current | IGSS | -- | -- | 20 | A | VGS=20V, VDS=0V |
| Saturated Drain-to-Source Current | IDSS | 200 | -- | -- | mA | VGS=0V, VDS=50V |
| Static Drain-to-Source On-Resistance | RDS(ON) | -- | 15 | 30 | VGS=0V, ID=200mA | |
| Gate-to-Source Cut-off Voltage | VGS(OFF) | -4.0 | -- | -1.5 | V | VDS=3V, ID=8A |
| Forward Transconductance | gfs | -- | 720 | -- | mS | VDS=20V, ID=200mA |
| Input Capacitance | Ciss | -- | 393.4 | -- | pF | VGS=-10V, VDS=50V, f=1.0MHz |
| Output Capacitance | Coss | -- | 20.7 | -- | pF | VGS=-10V, VDS=50V, f=1.0MHz |
| Reverse Transfer Capacitance | Crss | -- | 4.1 | -- | pF | VGS=-10V, VDS=50V, f=1.0MHz |
| Total Gate Charge | Qg | -- | 13.6 | -- | nC | VGS=-10V~10V, VDS=150V, ID=200mA |
| Gate-to-Source Charge | Qgs | -- | 4.0 | -- | nC | VGS=-10V~10V, VDS=150V, ID=200mA |
| Gate-to-Drain (Miller) Charge | Qgd | -- | 3.6 | -- | nC | VGS=-10V~10V, VDS=150V, ID=200mA |
| Turn-on Delay Time | td(on) | -- | 18.1 | -- | ns | VGS=-10V~0V, VDD=150V, ID=200mA, RG=10 |
| Rise Time | trise | -- | 10.5 | -- | ns | VGS=-10V~0V, VDD=150V, ID=200mA, RG=10 |
| Turn-off Delay Time | td(off) | -- | 35.6 | -- | ns | VGS=-10V~0V, VDD=150V, ID=200mA, RG=10 |
| Fall Time | tfall | -- | 94.0 | -- | ns | VGS=-10V~0V, VDD=150V, ID=200mA, RG=10 |
| Diode Forward Voltage | VSD | -- | -- | 1.2 | V | ISD=200mA, VGS=-10V |
| Thermal Resistance, Junction-to-Case | RJC | -- | 83 | -- | /W | -- |
2410121522_ARK-micro-DMS8515E_C22371817.pdf
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