High Current P Channel MOSFET ASDsemi ASDM30P09ZB-R Suitable for PWM and Load Switching Solutions
Key Attributes
Model Number:
ASDM30P09ZB-R
Product Custom Attributes
Configuration:
-
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
9A
Operating Temperature -:
-55℃~+150℃
RDS(on):
20mΩ@10V
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
95pF
Number:
-
Output Capacitance(Coss):
240pF
Input Capacitance(Ciss):
1.3nF
Pd - Power Dissipation:
1.8W
Gate Charge(Qg):
50nC@1.0V
Mfr. Part #:
ASDM30P09ZB-R
Package:
SOT-23-3
Product Description
Product Overview
The ASDM30P09ZB is a P-channel MOSFET designed for high power and current handling capabilities. It features a low on-resistance (RDS(ON)) of less than 20m at VGS = -10V and 33m at VGS = -4.5V. This lead-free product is suitable for PWM applications and load switching, making it an ideal component for power management solutions.
Product Attributes
- Brand: Ascend Semiconductor Co.,Ltd
- Product Type: P-Channel MOSFET
- Package: SOT23-3
- Certifications: Lead Free Product is Acquired
Technical Specifications
| Symbol | Parameter | Test Condition | Min. | Typ. | Max. | Units |
|---|---|---|---|---|---|---|
| General Features | ||||||
| RDS(ON) | VGS = -10V | 20 | m | |||
| RDS(ON) | VGS = -4.5V | 33 | m | |||
| Product Summary | ||||||
| VDS | -30 | V | ||||
| RDS(on),max.@ VGS=-10 V | 20 | m | ||||
| ID | -9 | A | ||||
| Absolute Maximum Ratings (TC=25 unless otherwise specified) | ||||||
| VDSS | Drain-Source Voltage | -30 | V | |||
| VGSS | Gate-Source Voltage | 12 | V | |||
| ID | Continuous Drain Current | TC = 25 | -9 | A | ||
| ID | Continuous Drain Current | TC = 100 | -5 | A | ||
| IDM | Pulsed Drain Current note1 | -15 | A | |||
| PD | Power Dissipation | TC = 25 | 1.8 | W | ||
| RJC | Thermal Resistance, Junction to Ambient | 6.9 | /W | |||
| TJ, TSTG | Operating and Storage Temperature Range | -55 | 150 | |||
| Electrical Characteristics (TC=25 unless otherwise specified) | ||||||
| Off Characteristic | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V,ID= -250A | -30 | - | - | V |
| IDSS | Zero Gate Voltage Drain Current | VDS = -30V, VGS = 0V, | - | - | -1 | A |
| IGSS | Gate to Body Leakage Current | VDS =0V, VGS = 12V | - | - | 100 | nA |
| On Characteristic | ||||||
| VGS(th) | Gate Threshold Voltage | VDS= VGS, ID= -250A | -1.0 | -1.6 | -2.5 | V |
| RDS(on) | Static Drain-Source on-Resistance note2 | VGS =-10.V, ID =-5 A | - | 1300 | - | m |
| RDS(on) | Static Drain-Source on-Resistance note2 | VGS =-4.5V, ID =-3.0A | - | 2300 | - | m |
| Dynamic Characteristics | ||||||
| Ciss | Input Capacitance | VDS =-15V, VGS = 0V, f = 1.0MHz | - | 20 | 50 | pF |
| Coss | Output Capacitance | - | 240 | - | pF | |
| Crss | Reverse Transfer Capacitance | - | 95 | - | pF | |
| Qg | Total Gate Charge | VDS = -15V, ID = -5A, VGS = -1.0V | - | 11 | - | nC |
| Qgs | Gate-Source Charge | - | 4 | - | nC | |
| Qgd | Gate-Drain(Miller) Charge | - | 6 | - | nC | |
| Switching Characteristics | ||||||
| td(on) | Turn-on Delay Time | VDS = -15V, ID = -4A, RGEN=2.5,VGS=-1.0V | - | 18 | - | ns |
| tr | Turn-on Rise Time | - | 30 | - | ns | |
| td(off) | Turn-off Delay Time | - | 10 | - | ns | |
| tf | Turn-off Fall Time | - | 1.2 | - | V | |
| Drain-Source Diode Characteristics and Maximum Ratings | ||||||
| IS | Maximum Continuous Drain to Source Diode Forward Current | VGS = 0V, IS = -5A | - | - | -7 | A |
| ISM | Maximum Pulsed Drain to Source Diode Forward Current | - | - | -10 | A | |
| VSD | Drain to Source Diode Forward Voltage | VGS =-10.V, ID =-5 A | - | 16 | 20 | V |
| VSD | Drain to Source Diode Forward Voltage | VGS =-4.5V, ID =-3.0A | - | 23 | 33 | m |
| gFS | Forward Transconductance | VDS =-5V, ID = -5.0A | 20 | - | - | S |
Ordering and Marking Information
| PACKAGE | MARKING | Ordering Device No. | Package | Packing Quantity | Lot Number |
|---|---|---|---|---|---|
| SOT23-3 | 30P09 | ASDM30P09ZB-R | SOT23-3 | Tape&Reel 3000/Reel | 3007 |
Package Information
SOT-23-3L
2409291808_ASDsemi-ASDM30P09ZB-R_C2758226.pdf
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