40V N Channel MOSFET ASDsemi ASDM40N80Q R suitable for DC DC converters and synchronous rectification

Key Attributes
Model Number: ASDM40N80Q-R
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
80A
Operating Temperature -:
-55℃~+150℃
RDS(on):
4.5mΩ@10V
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Reverse Transfer Capacitance (Crss@Vds):
80pF
Number:
1 N-channel
Output Capacitance(Coss):
780pF
Input Capacitance(Ciss):
1.56nF
Pd - Power Dissipation:
65W
Gate Charge(Qg):
29nC@10V
Mfr. Part #:
ASDM40N80Q-R
Package:
DFN5x6-8
Product Description

Product Overview

The Ascend Semiconductor ASDM40N80Q is a 40V N-Channel MOSFET designed for high-efficiency power conversion applications. It features low on-resistance and fast switching speeds, making it suitable for DC/DC converters, on-board power for servers, and synchronous rectification. This device is 100% avalanche tested and available in Lead-Free and Green (RoHS Compliant) options.

Product Attributes

  • Brand: Ascend Semiconductor
  • Model: ASDM40N80Q
  • Channel Type: N-Channel
  • Voltage Rating: 40V
  • Compliance: Lead Free, Green Devices Available (RoHS Compliant)
  • Package Type: DFN5*6-8

Technical Specifications

Parameter Rating Unit Condition
VDSS 40 V
RDS(ON)-Typ@VGS=10V 3.5 m
ID @ TC=25C 80 A (VGS=10V)
ID @ TC=100C 51 A (VGS=10V)
ID @ TA=25C 25 A (VGS=10V)
ID @ TA=70C 19 A (VGS=10V)
IDP @ TC=25C 320 A (300s Pulse)
PD @ TC 65 W (TC=25C)
PD @ TA 4.2 W (TA=25C, Mounted on Large Heat Sink)
VGS 20 V
TJ 150 C
TSTG -55 to 150 C
BVDSS 40 V (ID=250A, VGS=0V)
VGS(th) 2.5 V (ID=250A, VDS=VGS)
RDS(ON) Typ. @ VGS=10V 3.5 m (ID=50A)
RDS(ON) Max. @ VGS=10V 4.5 m (ID=50A)
EAS 121 mJ (IAS =22A, VDD = 24V, RG = 50, Starting TJ = 25C)
RJC 1.92 C/W
RJA 30 C/W (Mounted on 1 inch square copper board)

2411220408_ASDsemi-ASDM40N80Q-R_C2972880.pdf

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