High voltage N Channel MOSFET Bestirpower BCZ120N21M1 with 100 percent avalanche tested reliability
Key Attributes
Model Number:
BCZ120N21M1
Product Custom Attributes
Drain To Source Voltage:
1.2kV
Current - Continuous Drain(Id):
100A
RDS(on):
21mΩ
Operating Temperature -:
-55℃~+175℃
Gate Threshold Voltage (Vgs(th)):
3V
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
17pF
Output Capacitance(Coss):
224pF
Input Capacitance(Ciss):
3.741nF
Pd - Power Dissipation:
469W
Gate Charge(Qg):
198nC
Mfr. Part #:
BCZ120N21M1
Package:
TO-247-4
Product Description
Product Overview
The BCZ120N21M1 is a high-performance N-Channel Silicon Carbide Power MOSFET designed for demanding power applications. With a robust 1200 V breakdown voltage and a low on-resistance of 21 m, this MOSFET offers significant system efficiency improvements, higher frequency applicability, and increased power density. Key benefits include reduced cooling effort, high switching speed with low gate charge, and a fast intrinsic diode with low reverse recovery. It is ideal for use in solar inverters, EV charging stations, UPS systems, and industrial power supplies. The device is Pb-free, Halogen Free, and RoHS Compliant, and is 100% Avalanche Tested.
Product Attributes
- Brand: Bestirpower
- Material: Silicon Carbide
- Channel Type: N-Channel
- Compliance: Pb-free, Halogen Free, RoHS Compliant
- Testing: 100% Avalanche Tested
Technical Specifications
| Part Number | Top Marking | Package | Drain to Source Voltage (VDSS) | Drain Current (ID Continuous @ TC=25) | On-Resistance (RDS(on), typ) | Gate Charge (Qg, typ) | Quantity |
|---|---|---|---|---|---|---|---|
| BCZ120N21M1 | BCZ120N21M1 | TO247-4L | 1200 V | 100 A | 21 m | 198 nC | 30 units (Tube) |
| Symbol | Parameter | Test Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| VDSS | Drain to Source Voltage | (TC = 25 unless otherwise noted) | 1200 | V | ||
| VGS | Gate to Source Voltage (DC) | -10 | +22 | V | ||
| VGSop | Recommended Operation Value | -5 | +18 | V | ||
| ID | Drain Current Continuous (TC = 25) | 100 | A | |||
| ID | Drain Current Continuous (TC = 100) | 71 | A | |||
| IDM | Drain Current Pulsed (Note1) | 250 | A | |||
| PD | Power Dissipation (TC = 25) | 469 | W | |||
| TJ, TSTG | Operating and Storage Temperature Range | -55 | 175 | |||
| TL | Maximum Lead Temperature for Soldering, 1/8 from Case for 10 Seconds | 260 | ||||
| Thermal Characteristics | ||||||
| RJC | Thermal Resistance, Junction to Case, Max. | 0.32 | /W | |||
| RJA | Thermal Resistance, Junction to Ambient, Max. | 40 | /W | |||
| Electrical Characteristics (TC = 25 unless otherwise noted) | ||||||
| Off Characteristics | ||||||
| BVDSS | Drain to Source Breakdown Voltage | VGS = 0 V, ID = 1 mA | 1200 | V | ||
| IDSS | Zero Gate Voltage Drain Current | VDS = 1200 V, VGS = 0 V | 1 | 100 | A | |
| IDSS | Zero Gate Voltage Drain Current | VDS = 1200 V, VGS = 0 V, TJ = 175 | 100 | A | ||
| IGSS | Gate-Source Leakage Current | VGS = +22 V, VDS = 0 V | +100 | nA | ||
| IGSS | Gate-Source Leakage Current | VGS = -10 V, VDS = 0 V | -100 | nA | ||
| On Characteristics | ||||||
| VGS(th) | Gate Threshold Voltage | VGS = VDS, ID = 17 mA (tested after VGS = 22 V, 1 ms pulse) | 2.0 | 3.0 | 4.5 | V |
| RDS(on) | Static Drain to Source On Resistance | VGS = 18 V, ID = 50 A | 21 | 29.4 | m | |
| RDS(on) | Static Drain to Source On Resistance | VGS = 18 V, ID = 50 A, TJ = 175 | 33.6 | m | ||
| gfs | Transconductance | VDS = 20 V, ID = 50 A | 24.4 | S | ||
| Dynamic Characteristics | ||||||
| Ciss | Input Capacitance | VDS = 800 V, VGS = 0V, f = 250 kHz | 3741 | pF | ||
| Coss | Output Capacitance | 224 | pF | |||
| Crss | Reverse Capacitance | 17 | pF | |||
| Eoss | Stored Energy in Output Capacitance | VDS = 0 V to 800 V, VGS = 0 V | 93 | J | ||
| Co(er) | Energy Related Output Capacitance | 291 | pF | |||
| Co(tr) | Time Related Output Capacitance | 456 | pF | |||
| Qg(tot) | Total Gate Charge | VDS = 800 V, ID = 50 A, VGS = -5 V / 18 V, Inductive load | 198 | nC | ||
| Qgs | Gate to Source Charge | 48 | nC | |||
| Qgd | Gate to Drain Miller Charge | 65 | nC | |||
| RG | Internal Gate Resistance | f = 1 MHz | 3.0 | |||
| Switching Characteristics | ||||||
| td(on) | Turn-On Delay Time | VDS = 800 V, ID = 50 A, VGS = -5 V / 18 V, RG = 2 , FWD : BCH120S020D1, Inductive load | 29 | ns | ||
| tr | Turn-On Rise Time | 29 | ns | |||
| td(off) | Turn-Off Delay Time | 62 | ns | |||
| tf | Turn-Off Fall Time | 12 | ns | |||
| Eon | Turn-on Switching Energy | 477 | J | |||
| Eoff | Turn-off Switching Energy | 342 | J | |||
| Etot | Total Switching Energy | 819 | J | |||
| Source-Drain Diode Characteristics | ||||||
| IS | Maximum Continuous Diode Forward Current | 100 | A | |||
| ISM | Maximum Pulsed Diode Forward Current | 250 | A | |||
| VSD | Diode Forward Voltage | VGS = -5 V, ISD = 50 A | 4.2 | V | ||
| trr | Reverse Recovery Time | VDD = 800 V, ISD = 50 A, dIF/dt = 3000 A/s, Includes Qoss | 22 | ns | ||
| Qrr | Reverse Recovery Charge | 482 | nC | |||
2412021740_Bestirpower-BCZ120N21M1_C42401699.pdf
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