Compact Surface Mount P Channel MOSFET BORN SI2309 SOT 23 3L Package Suitable for Switching Circuits
Key Attributes
Model Number:
SI2309
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
2A
Operating Temperature -:
-50℃~+150℃
RDS(on):
200mΩ@4.5V,1A
Gate Threshold Voltage (Vgs(th)):
-
Reverse Transfer Capacitance (Crss@Vds):
15pF@30V
Number:
1 P-Channel
Input Capacitance(Ciss):
310pF@30V
Pd - Power Dissipation:
800mW
Gate Charge(Qg):
5.4nC@30V
Mfr. Part #:
SI2309
Package:
SOT-23-3L
Product Description
Product Overview
The SI2309 is a P-Channel MOSFET featuring advanced trench process technology and a high-density cell design for ultra-low on-resistance. It is available in a SOT-23-3L surface mount package. This MOSFET is designed for applications such as load switching, switching circuits, and high-speed line drivers, offering efficient performance with low on-state resistance at various gate-source voltages.
Product Attributes
- Brand: Not explicitly stated, but associated with www.born-tw.com
- Package Type: SOT-23-3L
- Revision: 2018
Technical Specifications
| Parameter | Symbol | Condition | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings @TA=25 unless otherwise noted | ||||||
| Drain-Source Voltage | VDS | -60 | V | |||
| Gate-Source Voltage | VGS | ±20 | V | |||
| Continuous Drain Current | ID | -2 | A | |||
| Pulsed Drain Current | IDM | 1) | -8 | A | ||
| Maximum Power Dissipation | PD | TA = 25°C | 0.8 | W | ||
| Maximum Power Dissipation | PD | TA = 75°C | 0.4 | W | ||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -50 | 150 | °C | ||
| Junction-to-Ambient Thermal Resistance (PCB mounted) | RthJA | 3) | 166 | °C/W | ||
| Junction-to-Ambient Thermal Resistance (PCB mounted) | RthJA | 2) | 100 | °C/W | ||
| Electrical Characteristics @TA=25 unless otherwise noted | ||||||
| Drain-Source Breakdown Voltage | (BR)DSS | VGS=0V, ID=-250μA | -60 | -- | -- | V |
| Zero Gate Voltage Drain Current | IDSS | VDS=-60V, VGS=0V (TA=25°C) | -- | -- | -1 | μA |
| Zero Gate Voltage Drain Current | IDSS | VDS=-60V, VGS=0V (TA=125°C) | -- | -- | -100 | μA |
| Gate-Body Leakage Current | IGSS | VGS=±20V, VDS=0V | -- | -- | ±100 | nA |
| Gate Threshold Voltage | VGS(TH) | VDS=VGS, ID=-250μA | -1.0 | -1.5 | -2.5 | V |
| Drain-Source On-State Resistance | RDS(ON) | VGS=-10V, ID=-2A | -- | 150 | 200 | mΩ |
| Drain-Source On-State Resistance | RDS(ON) | VGS=-4.5V, ID=-1A | -- | 200 | 300 | mΩ |
| Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise stated) | ||||||
| Input Capacitance | Ciss | VDS=-30V, VGS=0V, f=1MHz | -- | 310 | -- | pF |
| Output Capacitance | Coss | -- | 22 | -- | pF | |
| Reverse Transfer Capacitance | Crss | -- | 15 | -- | pF | |
| Total Gate Charge | Qg | VDS=-30V, ID=-2A, VGS=-10V | -- | 5.4 | -- | nC |
| Gate Source Charge | Qgs | -- | 1.1 | -- | nC | |
| Gate Drain Charge | Qgd | -- | 1.6 | -- | nC | |
| Switching Characteristics | ||||||
| Turn on Delay Time | td(on) | VDD=-30V, ID=-2A, RG=3.3Ω, VGS=-10V | -- | 41 | -- | ns |
| Turn on Rise Time | tr | -- | 22 | -- | ns | |
| Turn Off Delay Time | td(off) | -- | 25 | -- | ns | |
| Turn Off Fall Time | tf | -- | 32 | -- | ns | |
| Source Drain Diode Characteristics | ||||||
| Source drain current (Body Diode) | IS | TA=25°C | -- | -- | -1.4 | A |
| Forward on voltage (Body Diode) | VSD | Tj=25°C, ISD=-2A, VGS=0V | -- | -0.84 | -1.2 | V |
Applications
- Load Switch
- Switching Circuits
- High Speed line Driver
Ordering Information
| Order Code | Package | Base Qty | Delivery Mode | Marking |
|---|---|---|---|---|
| SI2309 | SOT-23-3L | 3K | Tape and reel | N9ADE |
2410121813_BORN-SI2309_C431496.pdf
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