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quality High Voltage N Channel MOSFET BORN BMI5N50 with Fast Switching and 5A Continuous Drain Current Rating factory
quality High Voltage N Channel MOSFET BORN BMI5N50 with Fast Switching and 5A Continuous Drain Current Rating factory

High Voltage N Channel MOSFET BORN BMI5N50 with Fast Switching and 5A Continuous Drain Current Rating

Key Attributes
Model Number: BMI5N50
Product Custom Attributes
Mfr. Part #:
BMI5N50
Package:
TO-252-2
Product Description

Product Overview

The BMI5N50 is an N-Channel MOSFET designed for efficient power switching applications. It features a high drain-source breakdown voltage of 500V and a continuous drain current rating of 5A, with a maximum on-resistance of 1.6 at VGS=10V. This MOSFET offers fast switching capabilities and low gate charge, contributing to improved system efficiency. It is manufactured with lead-free and green molding compound materials, complying with the EU RoHS directive. The device is packaged in a TO-252-2 (DPAK) package, suitable for various industrial and electronic power management systems.

Product Attributes

  • Brand: Not specified (Implied BMI)
  • Model: BMI5N50
  • Channel Type: N-Channel
  • Material Compliance: Lead-free, EU RoHS directive
  • Molding Compound: Green
  • Package Type: TO-252-2 (DPAK)

Technical Specifications

Parameter Symbol Conditions Min. Typ. Max. Units
Absolute Maximum Ratings
Drain - Source Voltage VDS (TC=25C unless otherwise specified) - - 500 V
Gate - Source Voltage VGS (TC=25C unless otherwise specified) - - ±30 V
Continuous Drain Current ID (TC=25C unless otherwise specified) - - 5 A
Pulsed Drain Current IDM (1) - - 20 A
Single Pulsed Avalanche Energy EAS (2) - - 250 mJ
Power Dissipation PD (TC=25C unless otherwise specified) - - 54 W
Junction and Storage Temperature Range TJ, Tstg (TC=25C unless otherwise specified) -55 - +150 C
Electrical Characteristics
Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID=250uA 500 - - V
Zero Gate Voltage Drain Current IDSS VDS = 500V, VGS=0V - - 1 uA
Gate-Body Leakage Current IGSS VGS = ±30V, VDS=0V - - ±100 nA
Gate Threshold Voltage VGS(TH) VGS = VDS, ID=250uA 2.0 - 4.0 V
Static Drain-Source On Resistance RDS(ON) VGS=10V, ID=2.5A - 1.4 1.6
Dynamic Characteristics
Input Capacitance Ciss VDS =25V, VGS =0V, f = 1MHz - 554 - pF
Output Capacitance Coss VDS =25V, VGS =0V, f = 1MHz - 65 - pF
Reverse Transfer Capacitance Crss VDS =25V, VGS =0V, f = 1MHz - 8 - pF
Switching Characteristics
Turn-On Delay Time Td(on) VDD=30V, ID=0.5A, RG =25 - 30 - ns
Turn-On Rise Time Tr VDD=30V, ID=0.5A, RG =25 - 50 - ns
Turn-Off Delay Time Td(off) VDD=30V, ID=0.5A, RG =25 - 140 - ns
Turn-Off Fall Time Tf VDD=30V, ID=0.5A, RG =25 - 70 - ns
Total Gate Charge Qg VDS=400V, VGS=10V, ID=5A - 17 - nC
Gate-Source Charge Qgs VDS=400V, VGS=10V, ID=5A - 3 - nC
Gate-Drain Charge Qgd VDS=400V, VGS=10V, ID=5A - 8 - nC
Source-Drain Diode Characteristics
Continuous Diode Forward Current IS - - - 5 A
Pulsed Diode Forward Current ISM - - - 20 A
Diode Forward Voltage VSD VGS=0V, IS=1A - - 1 V

Notes:
(1) Repetitive Rating: pulse width limited by maximum junction temperature.
(2) L=10mH, IAS=7.1A, VDD=50V, RG=2.4, Starting TJ=25C.
Pulsed Test: pulse width 300us, duty cycle 2%. Essentially independent of operating temperature.


2511241925_BORN-BMI5N50_C52993702.pdf

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