Dual P Channel MOSFET Bruckewell MSQ30P07D featuring SOP 8 package and RoHS compliance for electronics
Key Attributes
Model Number:
MSQ30P07D
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
6.5A
RDS(on):
28mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
-
Pd - Power Dissipation:
1.5W
Input Capacitance(Ciss):
1.345nF@15V
Gate Charge(Qg):
12.6nC@15V
Mfr. Part #:
MSQ30P07D
Package:
SOP-8
Product Description
Product Overview
The MSQ30P07D is a high-performance dual P-channel MOSFET featuring extreme high cell density, offering excellent RDS(ON) and gate charge characteristics. It is ideally suited for synchronous buck converter applications. This device meets RoHS and Green Product requirements, is 100% EAS guaranteed, and has full function reliability approval. Typical applications include MB, VGA, Vcore, POL, Load Switch, and LED applications.Product Attributes
- Brand: Bruckewell Technology Corporation
- Product Line: Dual P-Channel MOSFET
- Model: MSQ30P07D
- Certifications: RoHS Compliant, Green Device Available
- Package Type: SOP-8
- Packing: 3,000/Reel
Technical Specifications
| Symbol | Parameter | Test Conditions | Min. | Typ. | Max. | Units |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| VDS | Drain-Source Voltage | -30 | V | |||
| VGS | Gate-Source Voltage | ±20 | V | |||
| ID | Continuous Drain Current (TA =25°C) | -6.5 | A | |||
| ID | Continuous Drain Current (TA =70°C) | -5.2 | A | |||
| IDM | Pulsed Drain Current | -26 | A | |||
| IAS | Single Pulse Avalanche Current, L =0.1mH | -38 | A | |||
| EAS | Single Pulse Avalanche Energy, L =0.1mH | 72 | mJ | |||
| PD | Power Dissipation (TA =25°C) | 1.5 | W | |||
| TJ/TSTG | Operating Junction and Storage Temperature | -55 | +150 | °C | ||
| Thermal Resistance Ratings | ||||||
| RθJA | Maximum Junction-to-Ambient | (Note 1) | 85 | °C/W | ||
| RθJC | Maximum Junction-to-Case | (Note 1) | 25 | °C/W | ||
| Electrical Characteristics (TJ=25°C unless otherwise specified) | ||||||
| VGS (th) | Gate Threshold Voltage | VDS =VGS, ID =-250μA | -1.0 | -2.5 | V | |
| BVDSS | Drain-Source Breakdown Voltage | VGS =0V, ID =-250μA | -30 | V | ||
| gfs | Forward Transconductance | VDS =-5V, ID =-6A | 17 | S | ||
| IGSS | Gate-Source Leakage Current | VDS =0V, VGS =±20V | ±100 | nA | ||
| IDSS | Drain-Source Leakage Current | VDS =-24V, VGS =0V, TJ =25°C | -1 | μA | ||
| IDSS | Drain-Source Leakage Current | VDS =-24V, VGS =0V, TJ =55°C | -5 | μA | ||
| RDS (on) | Static Drain-Source On-Resistance | VGS =-10V, ID =-6A | 28 | mΩ | ||
| RDS (on) | Static Drain-Source On-Resistance | VGS =-4.5V, ID =-4A | 35 | mΩ | ||
| EAS | Single Pulse Avalanche Energy | (Note 5) | 8.4 | mJ | ||
| VSD | Diode Forward Voltage | IS =-6.5A, VGS =0V, TJ =25°C | -1.2 | V | ||
| IS | Continuous Source Current | (Note 6) | -6.5 | A | ||
| ISM | Pulsed Source Current | (Note 2, 6) | -26 | A | ||
| Dynamic Characteristics | ||||||
| Qg | Total Gate Charge | VDS =-15V ID =-6A VGS =-4.5V | 12.6 | nC | ||
| Qgs | Gate-Source Charge | 4.8 | nC | |||
| Qgd | Gate-Drain Charge | 4.8 | nC | |||
| td(on) | Turn-On Delay Time | VDS =-15V ID =-6A VGS =-10V RG =3.3Ω | 4.6 | ns | ||
| tr | Rise Time | 14.8 | ns | |||
| td(off) | Turn-Off Delay Time | 41 | ns | |||
| tf | Fall Time | 19.6 | ns | |||
| CISS | Input Capacitance | VDS =-15V VGS =0V f =1.0MHz | 1345 | pF | ||
| COSS | Output Capacitance | 194 | pF | |||
| CRSS | Reverse Transfer Capacitance | 158 | pF | |||
| Rg | Gate Resistance | VGS =VDS =0V, f =1.0MHz | 13 | Ω | ||
| Notes: | ||||||
| 1. The data tested by surface mounted on a 1 inch² FR-4 board with 2OZ copper. | ||||||
| 2. The data tested by pulsed, pulse width ≤ 300μs, duty cycle ≤ 2%. | ||||||
| 3. The EAS data shows maximum rating. The test condition is VDD=-25V, VGS=-10V, L=0.1mH, IAS=-38A. | ||||||
| 4. The power dissipation is limited by 150°C junction temperature. | ||||||
| 5. The Min. value is 100% EAS tested guarantee. | ||||||
| 6. The data is theoretically the same as ID and IDM, in real applications, should be limited by total power dissipation. | ||||||
2410121628_Bruckewell-MSQ30P07D_C22465594.pdf
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