amplification switching dual transistor plastic encapsulated CBI MMDT3906V with epitaxial planar die
Key Attributes
Model Number:
MMDT3906V
Product Custom Attributes
Mfr. Part #:
MMDT3906V
Package:
SOT-563
Product Description
Product Overview
This DUAL TRANSISTOR (PNP+PNP) is constructed with epitaxial planar die, making it ideal for low power amplification and switching applications. It is a plastic-encapsulated transistor designed for reliable performance.
Product Attributes
- Type: DUAL TRANSISTOR (PNP+PNP)
- Construction: Epitaxial planar die
- Encapsulation: Plastic-Encapsulate Transistors
- Origin: Heyuan China Base Electronics Technology Co., Ltd.
- Marking: K3N
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Units |
|---|---|---|---|---|---|---|
| MAXIMUM RATINGS (Ta=25 unless otherwise noted) | ||||||
| Collector-Base Voltage | VCBO | -40 | V | |||
| Collector-Emitter Voltage | VCEO | -40 | V | |||
| Emitter-Base Voltage | VEBO | -5 | V | |||
| Collector Current - Continuous | IC | -0.2 | A | |||
| Collector Power Dissipation | PC | 0.2 | W | |||
| Thermal Resistance, Junction to Ambient Air | RJA | 625 | /W | |||
| Operation Junction and Storage Temperature Range | TJ,Tstg | -55 | +150 | |||
| ELECTRICAL CHARACTERISTICS (Ta=25 unless otherwise specified) | ||||||
| Collector-base breakdown voltage | V(BR)CBO | IC=-10A,IE=0 | -40 | V | ||
| Collector-emitter breakdown voltage | V(BR)CEO | IC=-1mA,IB=0 | -40 | V | ||
| Emitter-base breakdown voltage | V(BR)EBO | IE=-10A,IC=0 | -5 | V | ||
| Collector cut-off current | ICEX | VCE=-30V,VEB(OFF)=-3V | -50 | nA | ||
| Base cut-off current | IEBO | VEB=-5V,IC=0 | -50 | nA | ||
| DC current gain | hFE | VCE=-1V,IC=-0.1mA | 60 | |||
| VCE=-1V,IC=-1mA | 80 | |||||
| VCE=-1V,IC=-10mA | 100 | 300 | ||||
| VCE=-1V,IC=-50mA | 60 | |||||
| VCE=-1V,IC=-100mA | 30 | |||||
| Collector-emitter saturation voltage | VCE(sat) | IC=-10mA,IB=-1mA | -0.25 | V | ||
| IC=-50mA,IB=-5mA | -0.4 | V | ||||
| Base-emitter saturation voltage | VBE(sat) | IC=-10mA,IB=-1mA | -0.65 | -0.85 | V | |
| IC=-50mA,IB=-5mA | -0.95 | V | ||||
| Transition frequency | fT | VCE=-20V,IC=-10mA,f=100MHz | 250 | MHz | ||
| Collector output capacitance | Cob | VCB=-5V,IE=0,f=1MHz | 4.5 | pF | ||
| Noise figure | NF | VCE=-5V,Ic=-0.1mA,f=1KHz,Rg=1K | 4 | dB | ||
| Delay time | td | 35 | nS | |||
| Rise time | tr | VCC=-3V, VBE=0.5V IC=-10mA , IB1=-IB2=-1mA | 35 | nS | ||
| Storage time | tS | 225 | nS | |||
| Fall time | tf | VCC=-3V, IC=-10mA IB1=-IB2=- 1mA | 75 | nS | ||
2509181520_CBI-MMDT3906V_C51814143.pdf
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