Load switching N Channel MOSFET BORN BM3134KE with ultra low on resistance and compact SOT 723 package design
Key Attributes
Model Number:
BM3134KE
Product Custom Attributes
Configuration:
-
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
750mA
Operating Temperature -:
-
RDS(on):
800mΩ@1.8V,0.45A
Gate Threshold Voltage (Vgs(th)):
1.1V@250uA
Type:
-
Reverse Transfer Capacitance (Crss@Vds):
15pF
Number:
1 N-channel
Output Capacitance(Coss):
20pF
Pd - Power Dissipation:
350mW
Input Capacitance(Ciss):
120pF
Gate Charge(Qg):
-
Mfr. Part #:
BM3134KE
Package:
SOT-723
Product Description
Product Overview
The BM3134KE is an N-Channel MOSFET featuring advanced trench process technology and a high-density cell design for ultra-low on-resistance. It is designed for surface mount applications using the SOT-723 package. This lead-free product is suitable for load/power switching, interfacing switching, battery management for ultra-small portable electronics, and logic level shift applications.
Product Attributes
- Brand: Born-TW (implied by www.born-tw.com)
- Package Type: SOT-723
- Lead Free Product
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Drain-source breakdown voltage | V(BR)DSS | VGS = 0V, ID =250A | 20 | V | ||
| Zero gate voltage drain current | IDSS | VDS =20V,VGS = 0V | 1 | A | ||
| Gate-body leakage current | IGSS | VGS =10V, VDS = 0V | 20 | A | ||
| Gate threshold voltage | VGS(th) | VDS =VGS, ID =250A | 0.35 | 0.54 | 1.1 | V |
| Drain-source on-resistance | RDS(ON) | VGS =4.5V, ID =0.65A | 270 | 380 | m | |
| Drain-source on-resistance | RDS(ON) | VGS =2.5V, ID =0.55A | 320 | 450 | m | |
| Drain-source on-resistance | RDS(ON) | VGS =1.8V, ID =0.45A | 390 | 800 | m | |
| Forward transconductance | gFS | VDS =10V, ID =0.8A | 1.6 | S | ||
| Diode forward voltage | VSD | IS= 0.15A, VGS = 0V | 1.2 | V | ||
| Input capacitance | Ciss | 79 | 120 | pF | ||
| Output capacitance | Coss | 13 | 20 | pF | ||
| Reverse transfer capacitance | Crss | VDS =16V,VGS =0V,f =1MHz | 9 | 15 | pF | |
| Turn-on delay time | td(on) | VGS=4.5V,VDS=10V, ID =500mA,RGEN=10 | 6.7 | ns | ||
| Turn-on rise time | tr | VGS=4.5V,VDS=10V, ID =500mA,RGEN=10 | 4.8 | ns | ||
| Turn-off delay time | td(off) | VGS=4.5V,VDS=10V, ID =500mA,RGEN=10 | 17.3 | ns | ||
| Turn-off fall time | tf | VGS=4.5V,VDS=10V, ID =500mA,RGEN=10 | 7.4 | ns | ||
| Drain-Source Voltage | VDS | 20 | V | |||
| Typical Gate-Source Voltage | VGS | 12 | V | |||
| Continuous Drain Current (note 1) | ID | 0.75 | A | |||
| Pulsed Drain Current (tp=10s) | IDM | 1.8 | A | |||
| Power Dissipation (note 1) | PD | 350 | mW | |||
| Thermal Resistance from Junction to Ambient (note 1) | JA | 357 | /W | |||
| Junction Temperature | TJ | 150 | ||||
| Storage Temperature | TSTG | -55 | +150 | |||
| Lead Temperature for Soldering Purposes(1/8 duration for 10 s) | TL | 260 |
Package Information
Package: SOT-723
Dimensions (mm):
- A: 0.430 - 0.500
- A1: 0.000 - 0.050
- b: 0.170 - 0.270
- b1: 0.270 - 0.370
- c: 0.080 - 0.150
- D: 1.150 - 1.250
- E: 1.150 - 1.250
- E1: 0.750 - 0.850
- e: 0.800 (TYP.)
- : 7 REF.
Dimensions (inches):
- A: 0.017 - 0.020
- A1: 0.000 - 0.002
- b: 0.007 - 0.011
- b1: 0.011 - 0.015
- c: 0.003 - 0.006
- D: 0.045 - 0.049
- E: 0.045 - 0.049
- E1: 0.030 - 0.033
- e: 0.031 (TYP.)
- : 7 REF.
Ordering Information
| Order Code | Package | Base Qty | Delivery Mode | Marking |
|---|---|---|---|---|
| BM3134KE | SOT-723 | 8K | Tape and reel | 34KE |
2410121908_BORN-BM3134KE_C18199558.pdf
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