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quality High Voltage NPN Silicon Planar Transistor CBI FMMT458 Featuring 400V VCEO and 225mA Collector Current factory
quality High Voltage NPN Silicon Planar Transistor CBI FMMT458 Featuring 400V VCEO and 225mA Collector Current factory

High Voltage NPN Silicon Planar Transistor CBI FMMT458 Featuring 400V VCEO and 225mA Collector Current

Key Attributes
Model Number: FMMT458
Product Custom Attributes
Mfr. Part #:
FMMT458
Package:
SOT-23
Product Description

Product Overview

This NPN Silicon Planar High Voltage Transistor is designed for high voltage applications. It offers robust performance with a 400V VCEO rating and a continuous collector current of 225 mA. The transistor is suitable for various electronic circuits requiring reliable high-voltage switching and amplification.

Product Attributes

  • Brand: Heyuan China Base Electronics Technology Co., Ltd.
  • Type: NPN Silicon Planar High Voltage Transistor

Technical Specifications

Parameter Symbol Value Unit Conditions
ABSOLUTE MAXIMUM RATINGS
Collector-Base Voltage VCBO 400 V
Collector-Emitter Voltage VCEO 400 V
Emitter-Base Voltage VEBO 5 V
Continuous Collector Current IC 225 mA
Peak Pulse Current ICM 1 A
Base Current IB 200 mA
Power Dissipation at Tamb=25C Ptot 500 mW
Operating and Storage Temperature Range Tj:Tstg -55 to +150 C
ELECTRICAL CHARACTERISTICS (at Tamb = 25C)
Collector-Base Breakdown Voltage V(BR)CBO 400 V IC=100A
Collector-Emitter Breakdown Voltage VCEO(sus) 400 V IC=10mA*
Emitter-Base Breakdown Voltage V(BR)EBO 5 V IE=100A
Collector Cut-Off Current ICBO 100 nA VCB=320V
Collector Cut-Off Current ICES 100 nA VCE=320V
Emitter Cut-Off Current IEBO 100 nA VEB=4V
Collector-Emitter Saturation Voltage VCE(sat) 0.2 - 0.5 V IC=20mA, IB=2mA* / IC=50mA, IB=6mA*
Base-Emitter Saturation Voltage VBE(sat) 0.9 V IC=50mA, IB=5mA*
Base-Emitter Turn On Voltage VBE(on) 0.9 V IC=50mA, VCE=10V*
Static Forward Current Transfer Ratio hFE 100 - 300 IC=1mA, VCE=10V / IC=50mA, VCE=10V* / IC=100mA, VCE=10V*
Transition Frequency fT 50 MHz IC=10mA, VCE=20V, f=20MHz
Output Capacitance Cobo 5 pF VCB=20V, f=1MHz
Switching times ton, toff 135, 2260 (Typical) ns IC=50mA, VCC=100V, IB1=5mA, IB2=-10mA *Measured under pulsed conditions.

Spice parameter data is available upon request for this device.


2510101615_CBI-FMMT458_C51315364.pdf

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