Trench DMOS Based N Channel MOSFET Bruckewell MSH30N052 Suitable for Synchronous Rectifier Circuits
Key Attributes
Model Number:
MSH30N052
Product Custom Attributes
Drain To Source Voltage:
30V
Configuration:
-
Current - Continuous Drain(Id):
50A
RDS(on):
9mΩ@4.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
2.2V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
55pF@15V
Number:
1 N-channel
Input Capacitance(Ciss):
3.4nF@15V
Pd - Power Dissipation:
21.6W
Gate Charge(Qg):
9nC@10V
Mfr. Part #:
MSH30N052
Package:
PDFN5x6-8
Product Description
Product Overview
The MSH30N052 is an N-Channel MOSFET utilizing advanced trench DMOS technology. This technology is optimized to minimize on-resistance (RDS(ON)), enhance switching performance, and provide superior robustness in avalanche and commutation modes. It is ideally suited for high-efficiency, fast-switching applications. The device is RoHS and Green Product compliant, with 100% EAS guaranteed and full function reliability approval. Typical applications include power management in desktop computers, DC/DC converters, and synchronous rectifier circuits.
Product Attributes
- Brand: Bruckewell Technology Corporation
- Technology: Trench DMOS
- Compliance: RoHS, Green Product
- EAS Guarantee: 100%
- Package Type: PDFN 5X6
- Packing: 3,000/Reel
Technical Specifications
| Symbol | Parameter | Test Conditions | Min. | Typ. | Max. | Units |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| VDS | Drain-Source Voltage | 30 | V | |||
| VGS | Gate-Source Voltage | ±20 | V | |||
| ID | Continuous Drain Current (TC =25°C) | 50 | A | |||
| ID | Continuous Drain Current (TC =100°C) | 31 | A | |||
| IDM | Pulsed Drain Current | 100 | A | |||
| IAS | Single Pulse Avalanche Current (L =0.1mH) | 35 | A | |||
| EAS | Single Pulse Avalanche Energy (L =0.1mH) | 61 | mJ | |||
| PD | Power Dissipation (TC =25°C) | 21.6 | W | |||
| TJ/TSTG | Operating Junction and Storage Temperature | -55 | 150 | °C | ||
| Thermal Resistance Ratings | ||||||
| RθJA | Maximum Junction-to-Ambient | (Note 1) | 65 | °C/W | ||
| RθJC | Maximum Junction-to-Case | (Note 1) | 5.8 | °C/W | ||
| Electrical Characteristics (TJ=25°C unless otherwise specified) | ||||||
| VGS (th) | Gate Threshold Voltage | VDS =VGS, ID =250µA | 1.2 | - | 2.2 | V |
| BVDSS | Drain-Source Breakdown Voltage | VGS =0V, ID =250µA | 30 | - | - | V |
| IGSS | Gate-Source Leakage Current | VDS =0V, VGS =±20V | - | - | ±100 | nA |
| IDSS | Drain-Source Leakage Current | VDS =30V, VGS =0V, TJ =25°C | - | - | 1 | µA |
| IDSS | Drain-Source Leakage Current | VDS =30V, VGS =0V, TJ =55°C | - | - | 5 | µA |
| RDS (on) | Static Drain-Source On-Resistance | VGS =10V, ID =20A | - | 5.2 | - | mΩ |
| RDS (on) | Static Drain-Source On-Resistance | VGS =4.5V, ID =15A | - | 7.2 | - | mΩ |
| EAS | Single Pulse Avalanche Energy | VDD =25V, L =0.1mH, IAS =12A (Note 5) | 7 | - | - | mJ |
| VSD | Diode Forward Voltage | IS =1A, VGS =0V, TJ =25°C (Note 2) | - | - | 1.0 | V |
| IS | Continuous Source Current | (Note 1, 6) | - | - | 20 | A |
| ISM | Pulsed Source Current | (Note 2, 6) | - | - | 40 | A |
| Dynamic Characteristics | ||||||
| Qg | Total Gate Charge | VDS =15V, ID =20A, VGS =10V (Note 2) | - | 9 | - | nC |
| Qgs | Gate-Source Charge | - | 2.8 | - | nC | |
| Qgd | Gate-Drain Charge | - | 3.6 | - | nC | |
| td(on) | Turn-On Delay Time | VDS =15V, ID =20A, VGS =10V, RG =3Ω (Note 2) | - | 7 | - | ns |
| tr | Rise Time | - | 18.8 | - | ns | |
| td(off) | Turn-Off Delay Time | - | 19.5 | - | ns | |
| tf | Fall Time | - | 3.4 | - | ns | |
| CISS | Input Capacitance | VDS =15V, VGS =0V, f =1.0MHz | - | 1113 | - | pF |
| COSS | Output Capacitance | - | 436 | - | pF | |
| CRSS | Reverse Transfer Capacitance | - | 55 | - | pF | |
| Rg | Gate Resistance | VDS =0V, VGS =0V, f =1.0MHz | - | 1.7 | - | Ω |
2412061551_Bruckewell-MSH30N052_C42407733.pdf
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