NPN transistor with high voltage capability CBI 2SC1623W featuring 50V VCEO and 200 DC current gain
Key Attributes
Model Number:
2SC1623W
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
200mW
Transition Frequency(fT):
250MHz
Type:
NPN
Current - Collector(Ic):
100mA
Collector - Emitter Voltage VCEO:
50V
Operating Temperature:
-
Mfr. Part #:
2SC1623W
Package:
SOT-323
Product Description
Product Overview
The 2SC1623W is an NPN transistor featuring high DC current gain (hFE=200 Typ) at VCE=6V, IC=1mA and high voltage capability with a VCEO of 50V. This transistor is housed in a plastic surface-mounted SOT-323 package with 3 leads.
Product Attributes
- Type: NPN Transistor
- Marking: L6
- Package: SOT-323
Technical Specifications
| Parameter | Symbol | Test Conditions | Value | Units |
|---|---|---|---|---|
| Collector-Base Voltage | VCBO | 60 | V | |
| Collector-Emitter Voltage | VCEO | 50 | V | |
| Emitter-Base Voltage | VEBO | 5 | V | |
| Collector Current - Continuous | IC | 100 | mA | |
| Collector Power Dissipation | PC | (TA=25) | 200 | mW |
| Junction Temperature | TJ | 150 | ||
| Storage Temperature | Tstg | -55-150 | ||
| Collector-base breakdown voltage | V(BR)CBO | IC=100A, IE=0 | 60 | V |
| Collector-emitter breakdown voltage | V(BR)CEO | IC=1mA, IB=0 | 50 | V |
| Emitter-base breakdown voltage | V(BR)EBO | IE=100A, IC=0 | 5 | V |
| Collector cut-off current | ICBO | VCB=60V, IE=0 | 0.1 | A |
| Emitter cut-off current | IEBO | VEB=5V, IC=0 | 0.1 | A |
| DC current gain | hFE | VCE=6V, IC=1mA | 200-400 | |
| Collector-emitter saturation voltage | VCE(sat) | IC=100mA, IB=10mA | 0.3 | V |
| Base-emitter saturation voltage | VBE(sat) | IC=100mA, IB=10mA | 1 | V |
| Transition frequency | fT | VCE=6V, IC=10mA | 250 | MHz |
2409302302_CBI-2SC1623W_C2919777.pdf
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