Plastic encapsulated switching diode CBI BAV99T suitable for signal switching in electronic equipment
Key Attributes
Model Number:
BAV99T
Product Custom Attributes
Reverse Leakage Current (Ir):
2uA@75V
Reverse Recovery Time (trr):
4ns
Voltage - DC Reverse (Vr) (Max):
85V
Diode Configuration:
1 Pair Series Connection
Operating Junction Temperature Range:
-
Pd - Power Dissipation:
150mW
Voltage - Forward(Vf@If):
1.25V@150mA
Current - Rectified:
75mA
Mfr. Part #:
BAV99T
Package:
SOT-523
Product Description
Product Overview
This series of plastic-encapsulated switching diodes are designed for general-purpose switching applications, offering fast switching speeds and high conductance. They are suitable for various electronic circuits requiring efficient signal switching.
Product Attributes
- Brand: Heyuan China Base Electronics Technology Co., Ltd.
- Material: Plastic-Encapsulated
- Type: Switching Diode
Technical Specifications
| Model | Marking | Reverse Voltage (VR) | Forward Current (IO) | Forward Power Dissipation (PD) | Junction Temperature (Tj) | Storage Temperature (Tstg) | Reverse Breakdown Voltage (V(BR)) | Reverse Voltage Leakage Current (IR1) | Reverse Voltage Leakage Current (IR2) | Forward Voltage (VF) | Diode Capacitance (CD) | Reverse Recovery Time (trr) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| BAW56T | JD | 85 V | 75 mA | 150 mW | 150 | -55~+150 | 85 V (at IR=1A) | 2 A (at VR=75V) | 0.03 A (at VR=25V) | 715 mV (at IF=1mA) | 1.5 pF (at VR=0, f=1MHz) | 4 ns (at IF=IR=10mA, Irr=0.1IR, RL=100) |
| BAV70T | JJ | 85 V | 75 mA | 150 mW | 150 | -55~+150 | 85 V (at IR=1A) | 2 A (at VR=75V) | 0.03 A (at VR=25V) | 855 mV (at IF=10mA) | 1.5 pF (at VR=0, f=1MHz) | 4 ns (at IF=IR=10mA, Irr=0.1IR, RL=100) |
| BAV99T | JE | 85 V | 75 mA | 150 mW | 150 | -55~+150 | 85 V (at IR=1A) | 2 A (at VR=75V) | 0.03 A (at VR=25V) | 1000 mV (at IF=50mA) | 1.5 pF (at VR=0, f=1MHz) | 4 ns (at IF=IR=10mA, Irr=0.1IR, RL=100) |
| Additional Forward Voltage Data: | ||||||||||||
| 1250 mV (at IF=150mA) | ||||||||||||
| Parameter | Test Conditions | Min | Max | Unit |
|---|---|---|---|---|
| Reverse breakdown voltage | IR=1A | 85 | - | V |
| Reverse voltage leakage current | VR=75V | - | 2 | A |
| Reverse voltage leakage current | VR=25V | - | 0.03 | A |
| Forward voltage | IF=1mA | 715 | - | mV |
| Forward voltage | IF=10mA | 855 | - | mV |
| Forward voltage | IF=50mA | 1000 | - | mV |
| Forward voltage | IF=150mA | 1250 | - | mV |
| Diode capacitance | VR=0, f=1MHz | - | 1.5 | pF |
| Reverse recovery time | IF=IR=10mA, Irr=0.1IR, RL=100 | - | 4 | ns |
2409271703_CBI-BAV99T_C2919806.pdf
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