Plastic Encapsulated Zener Diode CBI BZT52C39S SOD323 Package Medium Current Planar Die Construction

Key Attributes
Model Number: BZT52C39S
Product Custom Attributes
Mfr. Part #:
BZT52C39S
Package:
SOD-323
Product Description

Product Overview

The SOD-323 Plastic-Encapsulated Zener Diodes are general-purpose, medium-current diodes designed for a wide range of applications. Featuring a planar die construction and 200mW power dissipation on a ceramic PCB, these diodes are ideally suited for automated assembly processes. They are available in lead-free versions, offering a reliable solution for various electronic circuits.

Product Attributes

  • Brand: Heyuan China Base Electronics Technology Co., Ltd.
  • Construction: Planar die
  • Encapsulation: Plastic
  • Packaging: SOD-323
  • Availability: Lead-free version available

Technical Specifications

Type Marking Code Zener Voltage Range (Vznom) @ IZT Max. Dynamic Impedance (ZZT) @ IZT Max. Dynamic Impedance (ZZK) @ IZK Max. Reverse Leakage Current (IR) @ VR
V (V) @ mA () @ mA () @ mA (A) @ V
BZT52C2V4S MH 2.4 (2.2...2.6) @ 5 100 @ 5 600 @ 1 50 @ 1
BZT52C2V7S MJ 2.7 (2.5...2.9) @ 5 100 @ 5 600 @ 1 20 @ 1
BZT52C3V0S MK 3.0 (2.8...3.2) @ 5 95 @ 5 600 @ 1 10 @ 1
BZT52C3V3S MM 3.3 (3.1...3.5) @ 5 95 @ 5 600 @ 1 5 @ 1
BZT52C3V6S MN 3.6 (3.4...3.8) @ 5 90 @ 5 600 @ 1 5 @ 1
BZT52C3V9S MP 3.9 (3.7...4.1) @ 5 90 @ 5 600 @ 1 3 @ 1
BZT52C4V3S MR 4.3 (4...4.6) @ 5 90 @ 5 600 @ 1 3 @ 1
BZT52C4V7S MX 4.7 (4.4...5) @ 5 80 @ 5 500 @ 1 3 @ 2
BZT52C5V1S MY 5.1 (4.8...5.4) @ 5 60 @ 5 480 @ 1 2 @ 2
BZT52C5V6S MZ 5.6 (5.2...6) @ 5 40 @ 5 400 @ 1 1 @ 2
BZT52C6V2S NA 6.2 (5.8...6.6) @ 5 10 @ 5 150 @ 1 3 @ 4
BZT52C6V8S NB 6.8 (6.4...7.2) @ 5 15 @ 5 80 @ 1 2 @ 4
BZT52C7V5S NC 7.5 (7...7.9) @ 5 15 @ 5 80 @ 1 1 @ 5
BZT52C8V2S ND 8.2 (7.7...8.7) @ 5 15 @ 5 80 @ 1 0.7 @ 5
BZT52C9V1S NE 9.1 (8.5...9.6) @ 5 15 @ 5 100 @ 1 0.5 @ 6
BZT52C10S NF 10 (9.4...10.6) @ 5 20 @ 5 150 @ 1 0.2 @ 7
BZT52C11S NH 11 (10.4...11.6) @ 5 20 @ 5 150 @ 1 0.1 @ 8
BZT52C12S NJ 12 (11.4...12.7) @ 5 25 @ 5 150 @ 1 0.1 @ 8
BZT52C13S NK 13 (12.4...14.1) @ 5 30 @ 5 170 @ 1 0.1 @ 8
BZT52C15S NM 15 (13.8...15.6) @ 5 30 @ 5 200 @ 1 0.1 @ 10.5
BZT52C16S NN 16 (15.3...17.1) @ 5 40 @ 5 200 @ 1 0.1 @ 11.2
BZT52C18S NP 18 (16.8...19.1) @ 5 45 @ 5 225 @ 1 0.1 @ 12.6
BZT52C20S NR 20 (18.8...21.2) @ 5 55 @ 5 225 @ 1 0.1 @ 14
BZT52C22S NX 22 (20.8...23.3) @ 5 55 @ 5 250 @ 1 0.1 @ 15.4
BZT52C24S NY 24 (22.8...25.6) @ 5 70 @ 5 250 @ 1 0.1 @ 16.8
BZT52C27S NZ 27 (25.1...28.9) @ 2 80 @ 2 300 @ 0.5 0.1 @ 18.9
BZT52C30S PA 30 (28...32) @ 2 80 @ 2 300 @ 0.5 0.1 @ 21
BZT52C33S PB 33 (31...35) @ 2 80 @ 2 325 @ 0.5 0.1 @ 23.1
BZT52C36S PC 36 (34...38) @ 2 90 @ 2 350 @ 0.5 0.1 @ 25.2
BZT52C39S PD 39 (37...41) @ 2 130 @ 2 350 @ 0.5 0.1 @ 27.3
BZT52C43S 6A 43 (40...46) @ 2.5 130 @ 2 500 @ 1 2 @ 33
BZT52C47S 6B 47 (44...50) @ 2.5 150 @ 2 500 @ 1 2 @ 36
BZT52C51S 6C 51 (48...54) @ 2.5 180 @ 2 500 @ 1 1 @ 39
BZT52C56S 6D 56 (52...60) @ 2.5 180 @ 2 500 @ 1 1 @ 43
BZT52C62S 6E 62 (58...66) @ 2.5 200 @ 2 500 @ 1 0.2 @ 47
BZT52C68S 6F 68 (64...72) @ 2.5 250 @ 2 500 @ 1 0.2 @ 52
BZT52C75S 6H 75 (70...79) @ 2.5 300 @ 2 500 @ 1 0.2 @ 57
Maximum Ratings (Ta=25 unless otherwise specified)
Characteristic Symbol Value Unit
Forward Voltage (Note 2) @ IF = 10mA VF 0.9 V
Power Dissipation (Note 1) PD 200 mW
Thermal Resistance from Junction to Ambient RJA 625 /W
Junction Temperature Tj 150
Storage Temperature Range Tstg -55~+150

Note 1: Mounted on ceramic PCB.

Note 2: Tested with pulses (20 ms).


2510101615_CBI-BZT52C39S_C51315195.pdf

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