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quality Plastic Encapsulated Zener Diode with Planar Die CBI BZT52C11S 200mW Power Dissipation on Ceramic PCB factory
quality Plastic Encapsulated Zener Diode with Planar Die CBI BZT52C11S 200mW Power Dissipation on Ceramic PCB factory

Plastic Encapsulated Zener Diode with Planar Die CBI BZT52C11S 200mW Power Dissipation on Ceramic PCB

Key Attributes
Model Number: BZT52C11S
Product Custom Attributes
Impedance(Zzt):
20Ω
Diode Configuration:
Independent
Zener Voltage(Range):
10.4V~11.6V
Pd - Power Dissipation:
200mW
Zener Voltage(Nom):
11V
Impedance(Zzk):
150Ω
Mfr. Part #:
BZT52C11S
Package:
SOD-323
Product Description

Product Overview

The BZT52C2V4S-BZT52C39S series are plastic-encapsulated Zener diodes designed for general purpose, medium current applications. Featuring a planar die construction and 200mW power dissipation on a ceramic PCB, these diodes are ideally suited for automated assembly processes. They are available in a lead-free version.

Product Attributes

  • Package: SOD-323
  • Construction: Planar die
  • Power Dissipation: 200mW on ceramic PCB
  • Assembly: Ideally suited for automated assembly processes
  • Availability: Lead-free version available

Technical Specifications

Model Marking Nominal Zener Voltage (V) Zener Voltage Min (V) @ IZT Zener Voltage Max (V) @ IZT Test Current (mA) Max Zener Impedance () @ IZT Max Reverse Current (A) @ VR Forward Voltage (V) @ IF Power Dissipation (mW) Thermal Resistance (/W) Junction Temperature () Storage Temperature Range ()
BZT52C2V4S WX 2.4 2.20 2.60 5 100 50 @ 1.0V 0.9 @ 10mA 200 625 150 -55~+150
BZT52C2V7S W1 2.7 2.5 2.9 5 100 20 @ 1.0V 0.9 @ 10mA 200 625 150 -55~+150
BZT52C3V0S W2 3.0 2.8 3.2 5 95 10 @ 1.0V 0.9 @ 10mA 200 625 150 -55~+150
BZT52C3V3S W3 3.3 3.1 3.5 5 95 5 @ 1.0V 0.9 @ 10mA 200 625 150 -55~+150
BZT52C3V6S W4 3.6 3.4 3.8 5 90 5 @ 1.0V 0.9 @ 10mA 200 625 150 -55~+150
BZT52C3V9S W5 3.9 3.7 4.1 5 90 3 @ 1.0V 0.9 @ 10mA 200 625 150 -55~+150
BZT52C4V3S W6 4.3 4.0 4.6 5 90 3 @ 1.0V 0.9 @ 10mA 200 625 150 -55~+150
BZT52C4V7S W7 4.7 4.4 5.0 5 80 3 @ 1.0V 0.9 @ 10mA 200 625 150 -55~+150
BZT52C5V1S W8 5.1 4.8 5.4 5 60 2 @ 1.0V 0.9 @ 10mA 200 625 150 -55~+150
BZT52C5V6S W9 5.6 5.2 6.0 5 40 1 @ 1.0V 0.9 @ 10mA 200 625 150 -55~+150
BZT52C6V2S WA 6.2 5.8 6.6 5 10 3 @ 1.0V 0.9 @ 10mA 200 625 150 -55~+150
BZT52C6V8S WB 6.8 6.4 7.2 5 15 2 @ 1.0V 0.9 @ 10mA 200 625 150 -55~+150
BZT52C7V5S WC 7.5 7.0 7.9 5 15 1 @ 1.0V 0.9 @ 10mA 200 625 150 -55~+150
BZT52C8V2S WD 8.2 7.7 8.7 5 15 0.7 @ 1.0V 0.9 @ 10mA 200 625 150 -55~+150
BZT52C9V1S WE 9.1 8.5 9.6 5 15 0.5 @ 1.0V 0.9 @ 10mA 200 625 150 -55~+150
BZT52C10S WF 10 9.4 10.6 5 20 0.2 @ 1.0V 0.9 @ 10mA 200 625 150 -55~+150
BZT52C11S WG 11 10.4 11.6 5 20 0.1 @ 1.0V 0.9 @ 10mA 200 625 150 -55~+150
BZT52C12S WH 12 11.4 12.7 5 25 0.1 @ 1.0V 0.9 @ 10mA 200 625 150 -55~+150
BZT52C13S WI 13 12.4 14.1 5 30 0.1 @ 1.0V 0.9 @ 10mA 200 625 150 -55~+150
BZT52C15S WJ 15 13.8 15.6 5 30 0.1 @ 1.0V 0.9 @ 10mA 200 625 150 -55~+150
BZT52C16S WK 16 15.3 17.1 5 40 0.1 @ 1.0V 0.9 @ 10mA 200 625 150 -55~+150
BZT52C18S WL 18 16.8 19.1 5 45 0.1 @ 1.0V 0.9 @ 10mA 200 625 150 -55~+150
BZT52C20S WM 20 18.8 21.2 5 55 0.1 @ 1.0V 0.9 @ 10mA 200 625 150 -55~+150
BZT52C22S WN 22 20.8 23.3 5 55 0.1 @ 1.0V 0.9 @ 10mA 200 625 150 -55~+150
BZT52C24S WO 24 22.8 25.6 5 70 0.1 @ 1.0V 0.9 @ 10mA 200 625 150 -55~+150
BZT52C27S WP 27 25.1 28.9 2 80 0.1 @ 0.5mA 0.9 @ 10mA 200 625 150 -55~+150
BZT52C30S WQ 30 28.0 32.0 2 80 0.1 @ 0.5mA 0.9 @ 10mA 200 625 150 -55~+150
BZT52C33S WR 33 31.0 35.0 2 80 0.1 @ 0.5mA 0.9 @ 10mA 200 625 150 -55~+150
BZT52C36S WS 36 34.0 38.0 2 90 0.1 @ 0.5mA 0.9 @ 10mA 200 625 150 -55~+150
BZT52C39S WT 39 37.0 41.0 2 130 0.1 @ 0.5mA 0.9 @ 10mA 200 625 150 -55~+150

Notes:

  • 1. Device mounted on ceramic PCB: 7.6mm x 9.4mm x 0.87mm with pad areas 25mm2.
  • 2. Short duration test pulse used to minimize self-heating effect.
  • 3. f = 1kHz.

2410121326_CBI-BZT52C11S_C2886374.pdf

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