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quality High Saturation Current N Channel MOSFET CBI BSS138DW Plastic Encapsulated Device in SOT 363 Package factory
quality High Saturation Current N Channel MOSFET CBI BSS138DW Plastic Encapsulated Device in SOT 363 Package factory

High Saturation Current N Channel MOSFET CBI BSS138DW Plastic Encapsulated Device in SOT 363 Package

Key Attributes
Model Number: BSS138DW
Product Custom Attributes
Drain To Source Voltage:
50V
Current - Continuous Drain(Id):
220mA
RDS(on):
6Ω@4.5V,0.22A
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1.5V
Reverse Transfer Capacitance (Crss@Vds):
6pF@25V
Input Capacitance(Ciss):
27pF@25V
Pd - Power Dissipation:
300mW
Mfr. Part #:
BSS138DW
Package:
SOT-363
Product Description

Product Overview

This product is a plastic-encapsulated N-channel MOSFET designed with a high-density cell for low RDS(ON). It functions as a voltage-controlled small signal switch, suitable for load switching in portable devices and DC/DC converters. Key features include a rugged and reliable design with high saturation current capability. The MOSFET is available in a SOT-363 package.

Product Attributes

  • Brand: Heyuan China Base Electronics Technology Co., Ltd.
  • Package Type: SOT-363

Technical Specifications

Parameter Symbol Test Condition Min Typ Max Unit
Key Electrical Characteristics (Ta=25 unless otherwise noted)
Drain-Source Voltage VDS 50 V
Continuous Gate-Source Voltage VGSS 20 V
Continuous Drain Current ID 0.22 A
Power Dissipation PD 0.3 W
Thermal Resistance from Junction to Ambient RJA 417 /W
Operating Temperature Tj 150
Storage Temperature Tstg -55 +150
Off Characteristics
Drain-source breakdown voltage V(BR)DSS VGS = 0V, ID =250A 50 V
Gate-body leakage IGSS VDS =0V, VGS =20V 500 nA
Zero gate voltage drain current IDSS VDS =50V, VGS =0V 0.5 A
VDS =30V, VGS =0V 100 nA
On Characteristics
Gate-threshold voltage (note 1) VGS(th) VDS =VGS, ID =1mA 0.80 1.50 V
Static drain-source on-resistance (note 1) RDS(on) VGS =10V, ID =0.22A 3.50
VGS =4.5V, ID =0.22A 6
Forward transconductance (note 1) gFS VDS =10V, ID =0.22A 0.12 S
Dynamic Characteristics (note 2)
Input capacitance Ciss VDS =25V,VGS =0V, f=1MHz 27 pF
Output capacitance Coss 13 pF
Reverse transfer capacitance Crss 6 pF
Switching Characteristics (note 1,2)
Turn-on delay time td(on) VDD=30V, VDS=10V, ID =0.29A,RGEN=6 5 ns
Rise time tr 18 ns
Turn-off delay time td(off) 36 ns
Fall time tf 14 ns
Drain-source body diode characteristics (note 1)
Body diode forward voltage VSD IS=0.44A, VGS = 0V 1.4 V
Package Outline Dimensions
Symbol Dimension in Millimeters Min Max
A 0.90 1.00
A1 0.010 0.100
B 1.20 1.40
bp 0.25 0.45
C 0.09 0.15
D 2.00 2.20
E 1.15 1.35
HE 2.15 2.55
Lp 0.25 0.46
0 6

Notes:

  • 1. Pulse Test; Pulse Width 300s, Duty Cycle 2%.
  • 2. These parameters have no way to verify.

2410121327_CBI-BSS138DW_C5362112.pdf

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