Low gate charge P Channel MOSFET in compact SOT23 package CYSTECH MTA50P01SN3 for power management

Key Attributes
Model Number: MTA50P01SN3
Product Custom Attributes
Drain To Source Voltage:
14V
Current - Continuous Drain(Id):
4.3A
Operating Temperature -:
-55℃~+150℃
RDS(on):
83.5mΩ@2.5V
Gate Threshold Voltage (Vgs(th)):
1V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
149pF
Number:
1 P-Channel
Output Capacitance(Coss):
163pF
Input Capacitance(Ciss):
559pF
Pd - Power Dissipation:
1.38W
Gate Charge(Qg):
7.7nC@4.5V
Mfr. Part #:
MTA50P01SN3
Package:
SOT-23
Product Description

Product Overview

The MTA50P01SN3 is a P-Channel Enhancement Mode MOSFET from CYStech Electronics Corp. It features low gate charge, a compact SOT-23 package, advanced trench process technology, and a high-density cell design for ultra-low on-resistance. It is suitable for applications requiring efficient power switching.

Product Attributes

  • Brand: CYStech
  • Package: SOT-23 (Pb-free lead plating and halogen-free package)
  • Certifications: RoHS compliant, Green compound products
  • Material: Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0. Lead: Pure tin plated.

Technical Specifications

DeviceBVDSS (V)ID @ VGS=-10V, TA=25C (A)RDSON@VGS=-4.5V, ID=-3.6A (m)RDSON@VGS=-2.5V, ID=-3.2A (m)VGS(th) (V)Qg (nC)Package
MTA50P01SN3-14-4.342.3 (typ)62.9 (typ)-0.4 to -1.07.7SOT-23
ParameterSymbolLimitUnitTest Conditions
Continuous Drain Current @ TA=25C, VGS=-4.5VID-4.3A(Note 3)
Continuous Drain Current @ TA=70C, VGS=-4.5VID-3.4A(Note 3)
Pulsed Drain CurrentIDM-20A(Notes 1, 2)
Maximum Power DissipationPD1.38W(Note 3)
Linear Derating Factor0.01W/C
Operating Junction and Storage Temperature RangeTj ; Tstg-55~+150C
Thermal Resistance, Junction-to-Ambient(PCB mounted)Rth,ja90C/WSurface mounted on 1 in copper pad of FR-4 board; 270C/W when mounted on minimum copper pad
Drain-Source VoltageVDS-14VVGS=0V, ID=-250A
Gate-Source VoltageVGS10V
Leakage Current (VDS=-12V, VGS=0V)IDSS-1ATj=25C
Leakage Current (VDS=-10V, VGS=0V)IDSS-10ATj=70C
Gate Leakage CurrentIGSS100nAVGS=10V, VDS=0V
Forward Transfer AdmittanceGFS6.5SVDS=-5V, ID=-3A
Source-Drain Diode VoltageVSD-0.9 to -1.2VVGS=0V, IS=-3.4A
Reverse Recovery TimeTrr28nsVGS=0V, IF=-2A, dIF/dt=100A/s
Reverse Recovery ChargeQrr8nCVGS=0V, IF=-2A, dIF/dt=100A/s

2410121618_CYSTECH-MTA50P01SN3_C373358.pdf

Contact Our Experts And Get A Free Consultation!

Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.