Low on resistance N channel MOSFET Diodes BSS138W 7 F ideal for power management and load switching
Key Attributes
Model Number:
BSS138W-7-F
Product Custom Attributes
Drain To Source Voltage:
50V
Current - Continuous Drain(Id):
200mA
Operating Temperature -:
-55℃~+150℃
RDS(on):
3.5Ω@10V
Gate Threshold Voltage (Vgs(th)):
1.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
8pF
Number:
1 N-channel
Output Capacitance(Coss):
25pF
Input Capacitance(Ciss):
50pF
Pd - Power Dissipation:
200mW
Mfr. Part #:
BSS138W-7-F
Package:
SOT-323
Product Description
Product Overview
The BSS138W is an N-channel enhancement mode MOSFET designed to minimize on-state resistance (RDS(ON)) while maintaining superior switching performance. This makes it an ideal component for high-efficiency power management applications, such as load switching. Key features include low on-resistance, low gate threshold voltage, low input capacitance, and fast switching speed. The device is also Totally Lead-Free & Fully RoHS Compliant and a Halogen- and Antimony-Free Green Device.
Product Attributes
- Brand: Diodes Incorporated
- Material: Molded Plastic, "Green" Molding Compound (UL Flammability Classification Rating 94V-0)
- Terminals: Matte Tin Finish Annealed over Alloy 42 Leadframe (Lead Free Plating)
- Compliance: Totally Lead-Free & Fully RoHS Compliant, Halogen- and Antimony-Free (Green Device)
- Moisture Sensitivity: Level 1 per J-STD-020
Technical Specifications
| Characteristic | Symbol | Value | Unit | Test Condition |
|---|---|---|---|---|
| Product Summary | ||||
| BVDSS | BVDSS | 50 | V | TA = +25C |
| RDS(ON) Max | RDS(ON) | 3.5 | @ VGS = 10V | |
| ID Max | ID | 200 | mA | TA = +25C |
| Maximum Ratings | ||||
| Drain-Source Voltage | VDSS | 50 | V | @ TA = +25C |
| Drain-Gate Voltage | VDGR | 50 | V | @ TA = +25C, Note 5 |
| Gate-Source Voltage Continuous | VGSS | ±20 | V | @ TA = +25C |
| Drain Current Continuous | ID | 200 | mA | @ TA = +25C, Note 6 |
| Thermal Characteristics | ||||
| Total Power Dissipation | PD | 200 | mW | @ TA = +25C, Note 6 |
| Thermal Resistance, Junction to Ambient | RθJA | 625 | °C/W | @ TA = +25C, Note 6 |
| Operating and Storage Temperature Range | TJ, TSTG | -55 to +150 | °C | |
| Electrical Characteristics | ||||
| Drain-Source Breakdown Voltage | BVDSS | 50 | V | VGS = 0V, ID = 250µA, Note 7 |
| Zero Gate Voltage Drain Current | IDSS | 0.5 | µA | VDS = 50V, VGS = 0V, Note 7 |
| Gate-Body Leakage | IGSS | ±100 | nA | VGS = ±20V, VDS = 0V, Note 7 |
| Gate Threshold Voltage | VGS(TH) | 0.5 - 1.2 - 1.5 | V | VDS = VGS, ID = 250µA, Note 7 |
| Static Drain-Source On-Resistance | RDS(ON) | 1.4 - 3.5 | Ω | VGS = 10V, ID = 0.22A, Note 7 |
| Forward Transconductance | gFS | 100 | mS | VDS = 25V, ID = 0.2A, f = 1.0kHz, Note 7 |
| Dynamic Characteristics | ||||
| Input Capacitance | Ciss | 50 | pF | VDS = 10V, VGS = 0V, f = 1.0MHz, Note 8 |
| Output Capacitance | Coss | 25 | pF | VDS = 10V, VGS = 0V, f = 1.0MHz, Note 8 |
| Reverse Transfer Capacitance | Crss | 8.0 | pF | VDS = 10V, VGS = 0V, f = 1.0MHz, Note 8 |
| Turn-On Delay Time | tD(ON) | 20 | ns | VDD = 30V, ID = 0.2A, RGEN = 50Ω, Note 8 |
| Turn-Off Delay Time | tD(OFF) | 20 | ns | VDD = 30V, ID = 0.2A, RGEN = 50Ω, Note 8 |
| Mechanical Data | ||||
| Case | SOT323 | |||
| Weight | 0.006 | grams (Approximate) | ||
| Ordering Information | ||||
| Part Number | Case | Packaging | ||
| BSS138W-7-F | SOT323 (Standard) | 3000/Tape & Reel | Note 4 | |
2412251033_DIODES-BSS138W-7-F_C24553.pdf
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