P Channel Enhancement Mode MOSFET Diodes ZXMP10A13FTA with Low On Resistance and Fast Switching Speed
Key Attributes
Model Number:
ZXMP10A13FTA
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
700mA
Operating Temperature -:
-55℃~+150℃
RDS(on):
1Ω@10V
Gate Threshold Voltage (Vgs(th)):
2V
Reverse Transfer Capacitance (Crss@Vds):
10.8pF@50V
Number:
1 P-Channel
Input Capacitance(Ciss):
141pF@50V
Pd - Power Dissipation:
625mW
Gate Charge(Qg):
1.8nC
Mfr. Part #:
ZXMP10A13FTA
Package:
SOT-23
Product Description
Product Overview
The Diodes Incorporated ZXMP10A13F is a 100V P-CHANNEL ENHANCEMENT MODE MOSFET designed for high-efficiency power management applications. Its unique structure offers a combination of low on-resistance and fast switching speed, making it ideal for DC-DC converters, power management functions, disconnect switches, and motor control. Key features include low input capacitance, low gate charge, and a low threshold voltage. This device is totally lead-free, fully RoHS compliant, and halogen and antimony-free, designated as a "Green" device. It is qualified to AEC-Q101 Standards for High Reliability, with an automotive-compliant part available under a separate datasheet (ZXMP10A13FQ).
Product Attributes
- Brand: Diodes Incorporated
- Product Type: P-CHANNEL ENHANCEMENT MODE MOSFET
- Compliance: Totally Lead-Free & Fully RoHS Compliant, Halogen and Antimony Free (Green Device)
- Reliability: Qualified to AEC-Q101 Standards
- Package Material: Molded Plastic, UL Flammability Classification Rating 94V-0
- Terminal Finish: Matte Tin Finish Annealed over Copper Leadframe
Technical Specifications
| Characteristic | Symbol | Value | Units | Test Condition |
|---|---|---|---|---|
| Drain-Source Voltage | BVDSS | -100 | V | ID = -250A, VGS = 0V |
| Gate-Source Voltage | VGS | ±20 | V | |
| Max Continuous Drain Current (TA = +25°C) | ID | -0.7 | A | VGS = -10V |
| Max Continuous Drain Current (TA = +70°C) | ID | -0.5 | A | VGS = -10V |
| Max Pulsed Drain Current | IDM | -3.1 | A | (Note 7) |
| Max Continuous Source Current (Body Diode) | IS | -1.1 | A | (Note 5) |
| Max Pulsed Source Current (Body Diode) | ISM | -3.1 | A | (Note 7) |
| Power Dissipation (Note 5) | PD | 625 | mW | |
| Power Dissipation (Note 6) | PD | 806 | mW | |
| Thermal Resistance, Junction to Ambient (Note 5) | RθJA | 200 | °C/W | |
| Thermal Resistance, Junction to Ambient (Note 6) | RθJA | 155 | °C/W | |
| Operating and Storage Temperature Range | TJ, TSTG | -55 to +150 | °C | |
| Zero Gate Voltage Drain Current | IDSS | -1.0 | µA | VDS = -100V, VGS = 0V |
| Gate-Source Leakage | IGSS | ±100 | nA | VGS = ±20V, VDS = 0V |
| Gate Threshold Voltage | VGS(TH) | -2.0 to -4.0 | V | ID = -250µA, VDS = VGS |
| Static Drain-Source On-Resistance | RDS(ON) | 1.0 | Ω | VGS = -10V, ID = -0.6A |
| Static Drain-Source On-Resistance | RDS(ON) | 1.45 | Ω | VGS = -6.0V, ID = -0.5A |
| Forward Transconductance | gFS | 1.2 | S | VDS = -15V, ID = -0.6A (Notes 9 & 11) |
| Diode Forward Voltage | VSD | -0.85 to -0.95 | V | TJ = +25°C, IS = -0.75A, VGS = 0V (Note 9) |
| Reverse Recovery Time | tRR | 29 | ns | TJ = +25°C, IF = -0.9A, di/dt = 100A/µs (Note 11) |
| Reverse Recovery Charge | QRR | 31 | nC | (Note 11) |
| Input Capacitance | CISS | 141 | pF | VDS = -50V, VGS = 0V, f = 1.0MHz (Note 11) |
| Output Capacitance | COSS | 13.1 | pF | (Note 11) |
| Reverse Transfer Capacitance | CRSS | 10.8 | pF | (Note 11) |
| Turn-On Delay Time | tD(ON) | 1.6 | ns | VDD = -50V, ID = -1.0A, RG ≈ 6.0Ω, VGS = -10V (Note 10) |
| Turn-On Rise Time | tR | 2.1 | ns | (Note 10) |
| Turn-Off Delay Time | tD(OFF) | 5.9 | ns | (Note 10) |
| Turn-Off Fall Time | tF | 3.3 | ns | (Note 10) |
| Total Gate Charge | QG | 1.8 | nC | VDS = -50V, VGS = -5.0V, ID = -0.6A (Note 10) |
| Total Gate Charge | QG | 3.5 | nC | VDS = -50V, VGS = -10V, ID = -0.6A (Note 10) |
| Gate-Source Charge | QGS | 0.6 | nC | (Note 10) |
| Gate-Drain Charge | QGD | 1.6 | nC | (Note 10) |
| Package | SOT23 | |||
| Weight (Approximate) | 0.009 | grams | ||
| Part Number | ZXMP10A13FTA | SOT23, 3,000/Tape & Reel | ||
| Part Number | ZXMP10A13FTC | SOT23, 10,000/Tape & Reel |
Notes:
- 5. For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
- 6. For a device surface mounted on FR4 PCB measured at t ≤5 secs.
- 7. Repetitive rating 25mm x 25mm FR4 PCB, D=0.05 pulse width=10µs - pulse current limited by maximum junction temperature.
- 8. Thermal resistance from junction to solder-point (at the end of the drain lead).
- 9. Measured under pulsed conditions. Pulse width = 300µs. Duty cycle ≤ 2%.
- 10. Switching characteristics are independent of operating junction temperature.
- 11. For design aid only, not subject to production testing.
2412251103_DIODES-ZXMP10A13FTA_C50185.pdf
Related Products
IGBT module YANGJIE MG200HF12MIC2 offering short circuit rating and fast soft reverse recovery diodes
Product OverviewThe MG200HF12MIC2 S-M304 is a high-performance IGBT module designed for demanding applications. It features short circuit rating, low stray inductance, and low switching losses, with a VCE(sat) exhibiting a positive temperature coefficient. This module offers fast switching and a ...
complementary mosfets featuring xnrusemi xr20g10 with n channel and p channel fast switching capabilities
XR20G10 N-Ch and P-Ch Fast Switching MOSFETs Product Description The XR20G10 is a high-performance complementary N-channel and P-channel MOSFET series featuring extreme high cell density. This design provides excellent RDS(ON) and gate charge characteristics, making it ideal for synchronous buck ...
Power Field Effect Transistor XDS TX15N10B N Channel MOSFET Suitable for Battery Powered Circuits
Product DescriptionThe TX15N10B is an N-Channel logic enhancement mode power field-effect transistor utilizing high cell density, DMOS trench technology. This advanced process minimizes on-state resistance, making the device particularly suitable for low-voltage applications such as cellular phones, ...
Low voltage N channel MOSFET XCH GSW25N65EF Multi EPI Super Junction for power conversion solutions
Product OverviewThe GSW/GSA25N65EF is a low voltage N-channel Multi-EPI Super-Junction power MOSFET from XCH Semiconductor. It features advanced technology for enhanced characteristics such as fast switching times, low Ciss and Crss, low on-resistance, and excellent avalanche characteristics. This ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
