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quality Low RDS ON P Channel Enhancement Mode Transistor Doeshare DP3415 Featuring Trench Power LV MOSFET and ESD Protection factory
quality Low RDS ON P Channel Enhancement Mode Transistor Doeshare DP3415 Featuring Trench Power LV MOSFET and ESD Protection factory

Low RDS ON P Channel Enhancement Mode Transistor Doeshare DP3415 Featuring Trench Power LV MOSFET and ESD Protection

Key Attributes
Model Number: DP3415
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
5A
RDS(on):
120mΩ@1.8V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
950mV@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
116pF@10V
Number:
1 P-Channel
Input Capacitance(Ciss):
940pF@10V
Pd - Power Dissipation:
1.3W
Gate Charge(Qg):
60nC@4.5V
Mfr. Part #:
DP3415
Package:
SOT-23
Product Description

Product Overview

The DP3415 is a P-Channel Enhancement Mode Field Effect Transistor designed with Trench Power LV MOSFET technology. It features a high-density cell design for low RDS(ON), high-speed switching capabilities, and ESD protection up to 2.0KV (HBM). This device is suitable for applications such as battery protection, load switches, and power management.

Product Attributes

  • Brand: DOESHARE
  • Device Type: P-Channel Enhancement Mode Field Effect Transistor
  • Technology: Trench Power LV MOSFET
  • ESD Protected: Up to 2.0KV (HBM)
  • Device Marking: DP3415, 3415E or AFXL*

Technical Specifications

Parameter Symbol Conditions Min Typ Max Unit
Absolute Maximum Ratings (TA=25 unless otherwise noted)
Drain-Source Voltage VDS -20 V
Gate-Source Voltage VGS 12 V
Continuous Drain Current ID TA=25C -5 A
Continuous Drain Current ID TA=70C -4.2 A
Pulsed Drain Current IDM -23 A
Power Dissipation PD TA=25C 1.3 W
Thermal Resistance, Junction-to-Ambient Steady-State RthJA 96 /W
Junction Temperature TJ 150
Junction Storage Temperature Range Tstg -55 150
Electrical Characteristics (TJ=25 unless otherwise noted)
Drain-Source Breakdown Voltage BVDSS VGS= 0V, ID=-250A -20 V
Zero Gate Voltage Drain Current IDSS VDS=-20V,VGS=0V,TC=25 -1 A
Gate-Body Leakage Current IGSS VGS= 10V, VDS=0V 2.5 10 A
Gate-Body Leakage Current IGSS VGS= 8V, VDS=0V 2000 nA
Gate Threshold Voltage VGS(th) VDS= VGS, ID=-250A -0.50 -0.67 -0.95 V
Static Drain-Source On-Resistance RDS(ON) VGS= -4.5V, ID=-4.0A 35 42 m
Static Drain-Source On-Resistance RDS(ON) VGS= -2.5V, ID=-3.0A 47 60 m
Static Drain-Source On-Resistance RDS(ON) VGS= -1.8V, ID=-1.5A 64 120 m
Diode Forward Voltage VSD IS=-5A,VGS=0V -0.8 -1.2 V
Maximum Body-Diode Continuous Current IS -5 A
Input Capacitance Ciss VDS=-10V,VGS=0V,f=1MHZ 940 pF
Output Capacitance Coss 219 pF
Reverse Transfer Capacitance Crss 116 pF
Total Gate Charge Qg VGS=-4.5V,VDD=-10V,ID=-4A 7.2 nC
Gate Source Charge Qgs 1.2 nC
Gate Drain Charge Qgd 1.6 nC
Turn-on Delay Time tD(on) VGS=-4.5V,VDD=-10V, RL=2.5, RGEN=3 15 ns
Turn-on Rise Time tr 63 ns
Turn-off Delay Time tD(off) 21 ns
Turn-off Fall Time tf 12 ns

2410122027_Doeshare-DP3415_C2931753.pdf

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