ElecSuper FDN327N ES N Channel MOSFET Featuring Advanced Trench Technology and Low RDS ON Resistance
Key Attributes
Model Number:
FDN327N-ES
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
4A
RDS(on):
25mΩ@4.5V;29mΩ@2.5V
Gate Threshold Voltage (Vgs(th)):
750mV@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
50pF
Number:
1 N-channel
Output Capacitance(Coss):
55pF
Input Capacitance(Ciss):
470pF
Pd - Power Dissipation:
1.2W
Gate Charge(Qg):
6nC@4.5V
Mfr. Part #:
FDN327N-ES
Package:
SOT-23
Product Description
Product Overview
The FDN327N-ES is an N-Channel enhancement mode MOSFET utilizing advanced trench technology for excellent RDS(ON) and low gate charge. It is designed for applications such as DC-DC conversion, power switching, and charging circuits, offering high density cell design, reliability, and avalanche rating.
Product Attributes
- Brand: ElecSuper
- Part Number: FDN327N-ES
- Package: SOT-23
- Material: Halogen free
- Flammability Rating: UL 94V-0
- Certifications: Pb-free
Technical Specifications
| Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Unit |
| Absolute Maximum Ratings & Thermal Characteristics | ||||||
| Drain-Source Voltage | BVDSS | VGS=0V, ID=250uA | 20 | V | ||
| Gate-Source Voltage | VGS | ±12 | V | |||
| Continuous Drain Current | ID | TA=25°C | 4 | A | ||
| TA=100°C | 3 | A | ||||
| Maximum Power Dissipation | PD | 1.2 | W | |||
| Pulsed Drain Current | IDM | 16 | A | |||
| Operating Junction Temperature | TJ | 150 | °C | |||
| Lead Temperature | TL | 260 | °C | |||
| Storage Temperature Range | Tstg | -55 | 150 | °C | ||
| Junction-to-Ambient Thermal Resistance | RθJA | Single Operation | 106 | °C/W | ||
| Electrical Characteristics | ||||||
| Drain-to-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250uA | 20 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=20V, VGS=0V | 1 | uA | ||
| Gate-to-source Leakage Current | IGSS | VDS=0V, VGS=±12V | ±100 | nA | ||
| Gate Threshold Voltage | VGS(TH) | VGS=VDS, ID=250uA | 0.5 | 0.75 | 1.0 | V |
| Drain-to-source On-resistance | RDS(on) | VGS=4.5V, ID=4A | 25 | 32 | mΩ | |
| VGS=2.5V, ID=3A | 29 | 38 | mΩ | |||
| Input Capacitance | CISS | VGS=0V, f=1MHz, VDS=10V | 470 | pF | ||
| Output Capacitance | COSS | VGS=0V, f=1MHz, VDS=10V | 55 | pF | ||
| Reverse Transfer Capacitance | CRSS | VGS=0V, f=1MHz, VDS=10V | 50 | pF | ||
| Total Gate Charge | QG(TOT) | VGS=4.5V, VDS=10V, ID=2A | 6 | nC | ||
| Gate-to-Source Charge | QGS | VGS=4.5V, VDS=10V, ID=2A | 1 | nC | ||
| Gate-to-Drain Charge | QGD | VGS=4.5V, VDS=10V, ID=2A | 1.5 | nC | ||
| Turn-On Delay Time | td(ON) | VGS=4.5V, VDS=10V, ID=2A, RG=3Ω | 4 | ns | ||
| Rise Time | tr | VGS=4.5V, VDS=10V, ID=2A, RG=3Ω | 13 | ns | ||
| Turn-Off Delay Time | td(OFF) | VGS=4.5V, VDS=10V, ID=2A, RG=3Ω | 65 | ns | ||
| Fall Time | tf | VGS=4.5V, VDS=10V, ID=2A, RG=3Ω | 33 | ns | ||
| Forward Voltage | VSD | VGS=0V, IS=4A | 1.5 | V | ||
2504101957_ElecSuper-FDN327N-ES_C22363753.pdf
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