PNP transistor ElecSuper MMBT5401 with 160 volt breakdown voltage and 300 milliwatt power dissipation
Key Attributes
Model Number:
MMBT5401
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
300mW
Transition Frequency(fT):
100MHz
Type:
PNP
Current - Collector(Ic):
600mA
Collector - Emitter Voltage VCEO:
150V
Operating Temperature:
-
Mfr. Part #:
MMBT5401
Package:
SOT-23
Product Description
SuperTransistor MMBT5401
The MMBT5401 is a PNP transistor designed for switching applications. It offers a high breakdown voltage of -160V and a continuous collector current of -600mA, making it suitable for various electronic circuits. This transistor is complementary to the MMBT5551 and is housed in a compact SOT-23 small outline plastic package, ensuring ease of integration into compact designs. Its features include high stability and reliability, with a power dissipation of 300mW.
Product Attributes
- Brand: ElecSuper
- Complementary To: MMBT5551
- Package Type: SOT-23 Small Outline Plastic Package
- Epoxy Material: UL 94V-0
Technical Specifications
| Parameter | Symbol | Test Condition | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings & Thermal Characteristics | ||||||
| Collector-Base Voltage | VCBO | -160 | V | |||
| Collector-Emitter Voltage | VCEO | -150 | V | |||
| Emitter-Base Voltage | VEBO | -5 | V | |||
| Collector Current-Continuous | IC | -600 | mA | |||
| Collector Power Dissipation | PC | 300 | mW | |||
| Junction Temperature | Tj | 150 | ||||
| Storage Temperature | TSTG | -55 | 150 | |||
| Thermal Resistance (Junction to Ambient) | RJA | 416 | /W | |||
| Electrical Characteristics (At TA = 25 unless otherwise specified) | ||||||
| Collector-base breakdown voltage | V(BR)CBO | IC=-100uA, IE=0 | -160 | V | ||
| Collector-emitter breakdown voltage | V(BR)CEO* | IC=-1mA, IB=0 | -150 | V | ||
| Emitter-base breakdown voltage | V(BR)EBO | IE=-10uA, IC=0 | -5 | V | ||
| Collector cut-off current | ICBO | VCB=-120V, IE=0 | -100 | nA | ||
| Emitter cut-off current | IEBO | VEB=-4V, IC=0 | -100 | nA | ||
| DC current gain | hFE1* | VCE=-5V, IC=-1mA | 80 | |||
| DC current gain | hFE2* | VCE=-5V, IC=-10mA | 100 | 300 | ||
| DC current gain | hFE3* | VCE=-5V, IC=-50mA | 30 | |||
| Collector-emitter saturation voltage | VCE(sat) * | IC=-10mA, IB=-1mA | -0.20 | V | ||
| Collector-emitter saturation voltage | VCE(sat) * | IC=-50mA, IB=-5mA | -0.50 | V | ||
| Base-emitter saturation voltage | VBE(sat) * | IC=-10mA, IB=-1mA | -1.00 | V | ||
| Base-emitter saturation voltage | VBE(sat) * | IC=-50mA, IB=-5mA | -1.00 | V | ||
| Transition frequency | fT | VCE=-5V, IC=-10mA, f=30MHz | 100 | MHz | ||
| *Pulse test: pulse width300us, duty cycle2.0% | ||||||
Pin Configuration
| Pin | Function | Outline |
|---|---|---|
| 1 | Base | 3 |
| 2 | Emitter | 1 |
| 3 | Collector | 2 |
Dimensions and Patterns (SOT-23)
| Symbol | Dimensions (mm) Min. | Dimensions (mm) Max. | Symbol | Dimensions (mm) Min. | Dimensions (mm) Max. |
|---|---|---|---|---|---|
| A | 0.900 | 1.150 | E1 | 2.250 | 2.550 |
| A1 | 0.900 | 1.050 | e | 0.950 | TYP |
| b | 0.300 | 0.500 | e1 | 1.800 | 2.000 |
| c | 0.080 | 0.150 | L | 0.550 | REF |
| D | 2.800 | 3.00 | L1 | 0.300 | 0.500 |
| E | 1.200 | 1.400 | 0 | 8 | |
| 0.80 | 2.02 | 1.90 | 0.60 | ||
| Note: 1. Controlling dimension: in millimeters. 2. General tolerance: 0.05mm. 3. The pad layout is for reference only. 4. Unit: mm. | |||||
2410121717_ElecSuper-MMBT5401_C5249688.pdf
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