Low Gate Charge N Channel MOSFET ElecSuper ESGNU04R02 Ideal for DC DC Conversion and Power Switching
Key Attributes
Model Number:
ESGNU04R02
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
140A
RDS(on):
2mΩ@10V;3mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
480pF
Output Capacitance(Coss):
2.8nF
Pd - Power Dissipation:
83W
Input Capacitance(Ciss):
3.83nF
Gate Charge(Qg):
66nC@10V
Mfr. Part #:
ESGNU04R02
Package:
TO-220
Product Description
Product Overview
The ESGNU04R02 is an N-Channel enhancement mode MOSFET utilizing advanced shielded gate trench technology. It offers excellent RDS(ON) with low gate charge, making it suitable for DC-DC conversion, power switching, and charging circuits. This device is Pb-free and Halogen free.
Product Attributes
- Brand: ElecSuper
- Part Number: ESGNU04R02
- Package: TO-220
- Material: Halogen free
- Certifications: UL 94V-0
- Testing: 100% UIS TESTED
Technical Specifications
| Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Unit |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | BVDSS | VGS=0V, ID=250uA | 40 | V | ||
| Gate-Source Voltage | VGS | 20 | V | |||
| Continuous Drain Current | ID | TC=25C | 140 | A | ||
| Maximum Power Dissipation | PD | 83 | W | |||
| Pulsed Drain Current | IDM | 560 | A | |||
| Single Pulse Avalanche Energy | EAS | Starting TJ=25, VDD=32V, VG=10V, RG=25, L=0.5mH | 200 | mJ | ||
| Operating Junction Temperature | TJ | 150 | C | |||
| Lead Temperature | TL | 260 | C | |||
| Storage Temperature Range | Tstg | -55 | to | 150 | C | |
| Thermal Characteristics | ||||||
| Junction-to-Case Thermal Resistance | RJC | Single Operation | 1.5 | C/W | ||
| Electrical Characteristics | ||||||
| Drain-to-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250uA | 40 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=40V, VGS=0V | 1.0 | uA | ||
| Gate-to-source Leakage Current | IGSS | VDS=0V, VGS=20V | 100 | nA | ||
| Gate Threshold Voltage | VGS(TH) | VGS=VDS, ID=250uA | 1.0 | 2.5 | V | |
| Drain-to-source On-resistance | RDS(on) | VGS=10V, ID=20A | 2.0 | 2.3 | m | |
| Drain-to-source On-resistance | RDS(on) | VGS=4.5V, ID=20A | 3.0 | 3.8 | m | |
| Input Capacitance | CISS | VGS=0V, f=1MHz, VDS=25V | 3830 | pF | ||
| Output Capacitance | COSS | VGS=0V, f=1MHz, VDS=25V | 2800 | pF | ||
| Reverse Transfer Capacitance | CRSS | VGS=0V, f=1MHz, VDS=25V | 480 | pF | ||
| Total Gate Charge | QG(TOT) | VGS=10V, VDD=32V, ID=10A | 66 | nC | ||
| Gate-to-Source Charge | QGS | VGS=10V, VDD=32V, ID=10A | 13.6 | nC | ||
| Gate-to-Drain Charge | QGD | VGS=10V, VDD=32V, ID=10A | 12.6 | nC | ||
| Turn-On Delay Time | td(ON) | VGS=10V, VDD=20V, ID=20A, RG=0.5 | 890 | ns | ||
| Rise Time | tr | VGS=10V, VDD=20V, ID=20A, RG=0.5 | 21 | ns | ||
| Turn-Off Delay Time | td(OFF) | VGS=10V, VDD=20V, ID=20A, RG=0.5 | 72 | ns | ||
| Fall Time | tf | VGS=10V, VDD=20V, ID=20A, RG=0.5 | 34 | ns | ||
| Forward Voltage | VSD | VGS=0V, IS=20A | 1.5 | V | ||
2504101957_ElecSuper-ESGNU04R02_C42412307.pdf
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