N Channel Enhancement Mode MOSFET ElecSuper ESAC80SN10 for DC DC Conversion and Charging Circuits
Key Attributes
Model Number:
ESAC80SN10
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
92A
RDS(on):
10mΩ@4.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
2.6V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
14pF
Output Capacitance(Coss):
910pF
Input Capacitance(Ciss):
2.37nF
Pd - Power Dissipation:
125W
Gate Charge(Qg):
45nC@10V
Mfr. Part #:
ESAC80SN10
Package:
PDFN5x6-8L
Product Description
Product Overview
The ESAC80SN10 is an N-Channel enhancement mode MOSFET utilizing advanced shielded gate trench technology. It offers excellent RDS(ON) with low gate charge, making it suitable for DC-DC conversion, power switch, and charging circuit applications. This standard product is Pb-free and halogen-free.
Product Attributes
- Brand: ElecSuper
- Product Line: SuperMOS
- Material: Halogen free
- Certifications: UL 94V-0
- Color: Not specified
- Origin: Not specified
Technical Specifications
| Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Unit |
| OFF CHARACTERISTICS | ||||||
| Drain-to-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250uA | 100 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=100V, VGS=0V | 1 | uA | ||
| Gate-to-source Leakage Current | IGSS | VDS=0V, VGS=20V | 100 | nA | ||
| ON CHARACTERISTICS | ||||||
| Gate Threshold Voltage | VGS(TH) | VGS=VDS, ID=250uA | 1.4 | 2.0 | 2.6 | V |
| Drain-to-source On-resistance | RDS(on) | VGS=10V, ID=30A | 6.0 | 7.8 | m | |
| Drain-to-source On-resistance | RDS(on) | VGS=4.5V, ID=20A | 8.0 | 10.0 | m | |
| CHARGES, CAPACITANCES AND GATE RESISTANCE | ||||||
| Input Capacitance | CISS | VGS=0V, f=1MHz, VDS=50V | 2370 | pF | ||
| Output Capacitance | COSS | VGS=0V, f=1MHz, VDS=50V | 910 | pF | ||
| Reverse Transfer Capacitance | CRSS | VGS=0V, f=1MHz, VDS=50V | 14 | pF | ||
| Total Gate Charge | QG(TOT) | VGS=0 to 10V, VDS=50V, ID=20A | 45 | nC | ||
| Gate-to-Source Charge | QGS | VGS=0 to 10V, VDS=50V, ID=20A | 9 | nC | ||
| Gate-to-Drain Charge | QGD | VGS=0 to 10V, VDS=50V, ID=20A | 7 | nC | ||
| SWITCHING CHARACTERISTICS | ||||||
| Turn-On Delay Time | td(ON) | VGS=10V, VDD=50V, ID=20A, RG=3 | 12 | ns | ||
| Rise Time | tr | VGS=10V, VDD=50V, ID=20A, RG=3 | 15 | ns | ||
| Turn-Off Delay Time | td(OFF) | VGS=10V, VDD=50V, ID=20A, RG=3 | 33 | ns | ||
| Fall Time | tf | VGS=10V, VDD=50V, ID=20A, RG=3 | 20 | ns | ||
| BODY DIODE CHARACTERISTICS | ||||||
| Forward Voltage | VSD | VGS=0V, IS=30A | 1.2 | V | ||
| Absolute Maximum Rating & Thermal Characteristics | ||||||
| Drain-Source Voltage | BVDSS | 100 | V | |||
| Gate-Source Voltage | VGS | 20 | V | |||
| Continuous Drain Current | ID | TC=25C | 92 | A | ||
| Continuous Drain Current | ID | TC=100C | 55 | A | ||
| Maximum Power Dissipation | PD | 125 | W | |||
| Pulsed Drain Current | IDM | 368 | A | |||
| Avalanche Current, Single Pulsed | IAS | 23 | A | |||
| Avalanche Energy, Single Pulsed | EAS | 132 | mJ | |||
| Operating Junction Temperature | TJ | -55 | 150 | C | ||
| Lead Temperature | TL | 260 | C | |||
| Storage Temperature Range | Tstg | -55 | 150 | C | ||
| Junction-to-Case Thermal Resistance | RJC | Single Operation | 1 | C/W | ||
2504101957_ElecSuper-ESAC80SN10_C42434108.pdf
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