complementary MOSFETs FETek FKD4903 offering excellent CdV dt effect decline for power applications
Key Attributes
Model Number:
FKD4903
Product Custom Attributes
Configuration:
Common Drain
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
23A
RDS(on):
40mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
N-Channel + P-Channel
Reverse Transfer Capacitance (Crss@Vds):
80pF@15V
Number:
1 N-Channel + 1 P-Channel
Input Capacitance(Ciss):
1.004nF@15V
Pd - Power Dissipation:
31.3W
Gate Charge(Qg):
-
Mfr. Part #:
FKD4903
Package:
TO-252-4
Product Description
Product Overview
The FKD4903 is a high-performance complementary N-channel and P-channel MOSFET series featuring high cell density. It offers excellent RDS(ON) and gate charge characteristics, making it ideal for synchronous buck converter applications. The FKD4903 meets RoHS and Green Product requirements and is 100% EAS guaranteed with full function reliability approval.
Product Attributes
- Brand: FETek Technology Corp.
- Product Name: FKD4903 N-Ch and P-Ch Fast Switching MOSFETs
- Certifications: RoHS, Green Product
- Key Features: 100% EAS Guaranteed, Green Device Available, Super Low Gate Charge, Excellent CdV/dt effect decline, Advanced high cell density Trench technology
Technical Specifications
| Parameter | N-Ch Conditions | N-Ch Min. | N-Ch Typ. | N-Ch Max. | N-Ch Unit | P-Ch Conditions | P-Ch Min. | P-Ch Typ. | P-Ch Max. | P-Ch Unit |
| VDS (Drain-Source Voltage) | 40 | V | -40 | V | ||||||
| VGS (Gate-Source Voltage) | ±20 | V | ±20 | V | ||||||
| ID@TC=25 (Continuous Drain Current, VGS @ 10V) | 23 | A | -20 | A | ||||||
| ID@TC=100 (Continuous Drain Current, VGS @ 10V) | 18 | A | -16 | A | ||||||
| IDM (Pulsed Drain Current) | 46 | A | -40 | A | ||||||
| EAS (Single Pulse Avalanche Energy) | 28 | mJ | 66 | mJ | ||||||
| IAS (Avalanche Current) | 17.8 | A | -27.2 | A | ||||||
| PD@TC=25 (Total Power Dissipation) | 25 | W | 31.3 | W | ||||||
| TSTG (Storage Temperature Range) | -55 | 150 | -55 | 150 | ||||||
| TJ (Operating Junction Temperature Range) | -55 | 150 | -55 | 150 | ||||||
| RJA (Thermal Resistance Junction-Ambient) | --- | 62 | /W | --- | 62 | /W | ||||
| RJC (Thermal Resistance Junction-Case) | --- | 5 | /W | --- | 5 | /W | ||||
| BVDSS (Drain-Source Breakdown Voltage) | VGS=0V , ID=250uA | 40 | --- | --- | V | VGS=0V , ID=-250uA | -40 | --- | --- | V |
| RDS(ON) (Static Drain-Source On-Resistance) | VGS=10V , ID=12A | --- | 28 | m | VGS=-10V , ID=-8A | --- | 40 | m | ||
| VGS(th) (Gate Threshold Voltage) | VGS=VDS , ID =250uA | 1.0 | 1.5 | 2.5 | V | VGS=VDS , ID =-250uA | -1.0 | -1.6 | -2.5 | V |
| IDSS (Drain-Source Leakage Current) | VDS=32V , VGS=0V , TJ=25 | --- | 1 | uA | VDS=-32V , VGS=0V , TJ=25 | --- | 1 | uA | ||
| IGSS (Gate-Source Leakage Current) | VGS=±20V , VDS=0V | --- | ±100 | nA | VGS=±20V , VDS=0V | --- | ±100 | nA | ||
| Qg (Total Gate Charge) | VDS=20V , VGS=4.5V , ID=12A | 5.5 | --- | nC | VDS=-20V , VGS=-4.5V , ID=-12A | 9 | --- | nC | ||
| Ciss (Input Capacitance) | VDS=15V , VGS=0V , f=1MHz | 593 | --- | pF | VDS=-15V , VGS=0V , f=1MHz | 1004 | --- | pF | ||
| Coss (Output Capacitance) | 76 | --- | pF | 108 | --- | pF | ||||
| Crss (Reverse Transfer Capacitance) | 56 | --- | pF | 80 | --- | pF | ||||
| IS (Continuous Source Current) | VG=VD=0V , Force Current | --- | 23 | A | VG=VD=0V , Force Current | --- | -20 | A | ||
| ISM (Pulsed Source Current) | --- | 46 | A | --- | -40 | A | ||||
| VSD (Diode Forward Voltage) | VGS=0V , IS=1A , TJ=25 | --- | 1.2 | V | VGS=0V , IS=-1A , TJ=25 | --- | -1 | V |
2410121617_FETek-FKD4903_C2926958.pdf
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