Power Circuit Solutions Using ElecSuper ESN7414 N Channel MOSFET with Avalanche Rating and Low RDS
Key Attributes
Model Number:
ESN7414
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
23A
Operating Temperature -:
-55℃~+150℃
RDS(on):
10mΩ@10V
Gate Threshold Voltage (Vgs(th)):
1.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
70pF
Number:
1 N-channel
Output Capacitance(Coss):
100pF
Input Capacitance(Ciss):
600pF
Pd - Power Dissipation:
15.7W
Gate Charge(Qg):
14nC@10V
Mfr. Part #:
ESN7414
Package:
PDFN3x3-8L
Product Description
Product Overview
The ESN7414 is an N-Channel enhancement MOS Field Effect Transistor utilizing advanced trench technology for excellent RDS(ON) with low gate charge. It is designed for applications such as DC-DC conversion, power switches, and charging circuits, offering high-density cell design, reliability, and avalanche rating.
Product Attributes
- Brand: ElecSuper
- Model: ESN7414
- Package: PDFN3*3-8L
- Material: Halogen free
- Certifications: UL 94V-0
- Color: Pb-free
Technical Specifications
| Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Unit |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | BVDSS | 30 | V | |||
| Gate-Source Voltage | VGS | ±20 | V | |||
| Continuous Drain Current | ID | TC=25C | 23 | A | ||
| Continuous Drain Current | ID | TC=75C | 18 | A | ||
| Maximum Power Dissipation | PD | TC=25C | 15.7 | W | ||
| Maximum Power Dissipation | PD | TC=75C | 9.4 | W | ||
| Pulsed Drain Current | IDM | 80 | A | |||
| Avalanche Current, Single Pulsed | IAS | a | 15.5 | A | ||
| Avalanche Energy, Single Pulsed | EAS | a | 36 | mJ | ||
| Operating Junction Temperature | TJ | 150 | °C | |||
| Lead Temperature | TL | 260 | °C | |||
| Storage Temperature Range | Tstg | -55 | 150 | °C | ||
| Junction-to-Case Thermal Resistance | RJC | t ≤ 10 s | 8 | °C/W | ||
| Electrical Characteristics | ||||||
| Drain-to-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250uA | 30 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=30V, VGS=0V | 1.0 | uA | ||
| Gate-to-source Leakage Current | IGSS | VDS=0V, VGS=±20V | ±100 | nA | ||
| Gate Threshold Voltage | VGS(TH) | VGS=VDS, ID=250uA | 1.0 | 1.5 | 2.4 | V |
| Drain-to-source On-resistance | RDS(on) | VGS=10V, ID=10A | 10.0 | 19 | mΩ | |
| Drain-to-source On-resistance | RDS(on) | VGS=4.5V, ID=8A | 13.5 | 26 | mΩ | |
| Forward Transconductance | gFS | VDS=5.0V, ID=10A | 50 | S | ||
| Input Capacitance | CISS | VGS=0V, f=1MHz, VDS=15V | 600 | pF | ||
| Output Capacitance | COSS | VGS=0V, f=1MHz, VDS=15V | 100 | pF | ||
| Reverse Transfer Capacitance | CRSS | VGS=0V, f=1MHz, VDS=15V | 70 | pF | ||
| Total Gate Charge | QG(TOT) | VGS=10V, VDS=15V, ID=10A | 14 | nC | ||
| Gate-to-Source Charge | QGS | VGS=10V, VDS=15V, ID=10A | 1.8 | nC | ||
| Gate-to-Drain Charge | QGD | VGS=10V, VDS=15V, ID=10A | 4 | nC | ||
| Turn-On Delay Time | td(ON) | VGS=10V, VDS=15V, RL=1.5Ω, RGEN=3Ω | 5 | ns | ||
| Rise Time | tr | VGS=10V, VDS=15V, RL=1.5Ω, RGEN=3Ω | 3.5 | ns | ||
| Turn-Off Delay Time | td(OFF) | VGS=10V, VDS=15V, RL=1.5Ω, RGEN=3Ω | 22 | ns | ||
| Fall Time | tf | VGS=10V, VDS=15V, RL=1.5Ω, RGEN=3Ω | 4.5 | ns | ||
| Forward Voltage | VSD | VGS=0V, IS=1.0A | 0.45 | 1.5 | V | |
2504101957_ElecSuper-ESN7414_C5224308.pdf
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