High Density Cell N Channel Trench MOSFET FM 45N18 with Low RDS ON and RoHS Compliant Lead Free Package
Key Attributes
Model Number:
45N18
Product Custom Attributes
Drain To Source Voltage:
45V
Current - Continuous Drain(Id):
20A
Operating Temperature -:
-55℃~+175℃
RDS(on):
24mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
56pF
Number:
1 N-channel
Output Capacitance(Coss):
128pF
Pd - Power Dissipation:
20W
Input Capacitance(Ciss):
560pF
Gate Charge(Qg):
13.2nC@10V
Mfr. Part #:
45N18
Package:
SOP-8
Product Description
Product Overview
The 45N18 is an N-Channel Trench Power MOSFET from Fine Made Microelectronics Group Co., Ltd. It features a high-density cell design for ultra-low RDS(ON), making it suitable for applications such as DC/DC converters, wireless chargers, and synchronous rectification. This device is lead-free and green, complying with RoHS standards, and offers excellent heat dissipation in its SOP-8 package.
Product Attributes
- Brand: (FINE MADE MICROELECTRONICS GROUP CO., LTD.)
- Product Name: 45N18
- Type: N-Channel Trench Power MOSFET
- Certifications: RoHS Compliant (Lead Free and Green Devices Available)
Technical Specifications
| Parameter | Test Condition | Min. | Typ. | Max. | Units |
| Absolute Maximum Ratings | |||||
| Drain-Source Voltage (VDSS) | 45 | V | |||
| Gate-Source Voltage (VGSS) | ±20 | V | |||
| Continuous Drain Current (ID) | TC = 25 | 20 | A | ||
| Continuous Drain Current (ID) | TC = 100 | 12 | A | ||
| Pulsed Drain Current (IDM) | note1 | 80 | A | ||
| Single Pulsed Avalanche Energy (EAS) | note2 | 16 | mJ | ||
| Power Dissipation (PD) | TC = 25 | 20 | W | ||
| Thermal Resistance, Junction to Case (RJC) | 4.6 | /W | |||
| Operating and Storage Temperature Range (TJ, TSTG) | -55 | +175 | |||
| Electrical Characteristics | |||||
| Drain-Source Breakdown Voltage (V(BR)DSS) | VGS=0V,ID=250A | 45 | - | - | V |
| Zero Gate Voltage Drain Current (IDSS) | VDS =45V, VGS = 0V | - | - | 1.0 | μA |
| Gate to Body Leakage Current (IGSS) | VDS =0V,VGS = ±20V | - | - | ±100 | nA |
| Gate Threshold Voltage (VGS(th)) | VDS= VGS, ID=250μA | 1.0 | 1.5 | 2.5 | V |
| Static Drain-Source on-Resistance (RDS(on)) | VGS =10V, ID =15A, note3 | - | 15 | 20 | mΩ |
| Static Drain-Source on-Resistance (RDS(on)) | VGS =4.5V, ID =10A, note3 | - | 18 | 24 | mΩ |
| Input Capacitance (Ciss) | VDS = 20V, VGS =0V, f = 1.0MHz | - | 560 | - | pF |
| Output Capacitance (Coss) | VDS = 20V, VGS =0V, f = 1.0MHz | - | 128 | - | pF |
| Reverse Transfer Capacitance (Crss) | VDS = 20V, VGS =0V, f = 1.0MHz | - | 56 | - | pF |
| Total Gate Charge (Qg) | VDS =20V, ID =20A, VGS =10V | - | 13.2 | - | nC |
| Gate-Source Charge (Qgs) | VDS =20V, ID =20A, VGS =10V | - | 3.8 | - | nC |
| Gate-Drain(Miller) Charge (Qgd) | VDS =20V, ID =20A, VGS =10V | - | 6.2 | - | nC |
| Turn-on Delay Time (td(on)) | V DD=20V, ID =20A, RL=1Ω, RGEN=3Ω, VGS =10V | - | 6 | - | ns |
| Turn-on Rise Time (tr) | V DD=20V, ID =20A, RL=1Ω, RGEN=3Ω, VGS =10V | - | 12 | - | ns |
| Turn-off Delay Time (td(off)) | V DD=20V, ID =20A, RL=1Ω, RGEN=3Ω, VGS =10V | - | 14 | - | ns |
| Turn-off Fall Time (tf) | V DD=20V, ID =20A, RL=1Ω, RGEN=3Ω, VGS =10V | - | 5 | - | ns |
| Drain-Source Diode Characteristics | |||||
| Maximum Continuous Drain to Source Diode Forward Current (IS) | - | - | 20 | A | |
| Maximum Pulsed Drain to Source Diode Forward Current (ISM) | - | - | 80 | A | |
| Drain to Source Diode Forward Voltage (VSD) | VGS =0V, IS=20A | - | - | 1.2 | V |
| Body Diode Reverse Recovery Time (trr) | TJ=25, IF=20A,dI/dt=100A/μs | - | 10 | - | ns |
| Body Diode Reverse Recovery Charge (Qrr) | TJ=25, IF=20A,dI/dt=100A/μs | - | 16 | - | nC |
2410121754_FM-45N18_C2932020.pdf
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