IGBT Module Fuji Electric 2MBI150VA-060-50 for Motor Drives Servo Amplifiers and Welding Applications

Key Attributes
Model Number: 2MBI150VA-060-50
Product Custom Attributes
Pd - Power Dissipation:
650W
Collector-Emitter Breakdown Voltage (Vces):
600V
Reverse Transfer Capacitance (Cres):
9.7nF
Input Capacitance(Cies):
9.7nF
IGBT Type:
IGBT Module
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
6.2V@150mA
Reverse Recovery Time(trr):
200ns
Mfr. Part #:
2MBI150VA-060-50
Package:
Screw Terminals
Product Description

Product Overview

The Fuji Electric 2MBI150VA-060-50 is a high-speed switching IGBT module designed for voltage drive applications. It features a low inductance module structure and is suitable for various industrial applications including motor drives, servo amplifiers, uninterruptible power supplies, and welding machines.

Product Attributes

  • Brand: Fuji Electric
  • Model: 2MBI150VA-060-50
  • Product Type: IGBT Module (V series)
  • Origin: Japan (implied by website and language)
  • Certifications: Not specified in the provided text.
  • Material: Not specified in the provided text.
  • Color: Not specified in the provided text.

Technical Specifications

ItemsSymbolsConditionsUnitsmin.typ.max.
Absolute Maximum Ratings
Collector-Emitter voltageVCESV600
Gate-Emitter voltageVGESV20
Collector currentICTC=100CA150
IC pulse1msA300
-ICA150
-IC pulse1msA300
Collector power dissipationPC1 deviceW650
Junction temperatureTjC175
Operating junction temperature (under switching conditions)TjopC150
Case temperatureTCC125
Storage temperatureTstgC-40125
Isolation voltage between terminal and copper base (*1)VisoAC : 1min.VAC2500
Screw torque Mounting (*2)N m5.0
Screw torque Terminals (*3)N m5.0
Electrical Characteristics
Zero gate voltage collector currentICESVGE = 0V, VCE = 600VmA1.0
Gate-Emitter leakage currentIGESVCE = 0V, VGE = 20VnA200
Gate-Emitter threshold voltageVGE (th)VCE = 20V, IC = 150mAV6.26.77.2
Collector-Emitter saturation voltage (terminal)VCE (sat)VGE = 15V, IC = 150A, Tj=25CV1.752.20
Collector-Emitter saturation voltage (terminal)VCE (sat)VGE = 15V, IC = 150A, Tj=125CV2.05
Collector-Emitter saturation voltage (terminal)VCE (sat)VGE = 15V, IC = 150A, Tj=150CV2.25
Collector-Emitter saturation voltage (chip)VCE (sat)VGE = 15V, IC = 150A, Tj=25CV1.602.05
Collector-Emitter saturation voltage (chip)VCE (sat)VGE = 15V, IC = 150A, Tj=125CV1.90
Collector-Emitter saturation voltage (chip)VCE (sat)VGE = 15V, IC = 150A, Tj=150CV2.00
Internal gate resistanceRG (int)6
Input capacitanceCiesVCE = 10V, VGE = 0V, f = 1MHznF9.7
Turn-on timetonVCC = 300V, LS = 30nH, IC = 150A, VGE = 15V, RG = 9, Tj = 150Cnsec650
trnsec300
tr (i)nsec100
Turn-off timetoffnsec600
tfnsec40
Forward on voltage (terminal)VFVGE = 0V, IF = 150A, Tj=25CV1.702.15
Forward on voltage (terminal)VFVGE = 0V, IF = 150A, Tj=125CV1.60
Forward on voltage (terminal)VFVGE = 0V, IF = 150A, Tj=150CV1.57
Forward on voltage (chip)VFVGE = 0V, IF = 150A, Tj=25CV1.602.05
Forward on voltage (chip)VFVGE = 0V, IF = 150A, Tj=125CV1.50
Forward on voltage (chip)VFVGE = 0V, IF = 150A, Tj=150CV1.47
Reverse recovery timetrrIF = 150Ansec200
Thermal Resistance Characteristics
Thermal resistance (1device) IGBTRth(j-c)C/W0.31
Thermal resistance (1device) FWDRth(j-c)C/W0.60
Contact thermal resistance (1device) (*4)Rth(c-f)with Thermal CompoundC/W0.050

2410121955_Fuji-Electric-2MBI150VA-060-50_C111289.pdf

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