SOP 8 Packaged P Channel Power MOSFET GL GL14P04-8 with High Density Cell Design and RoHS Compliance
Key Attributes
Model Number:
GL14P04-8
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
14A
RDS(on):
11mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
480pF
Output Capacitance(Coss):
570pF
Input Capacitance(Ciss):
5.1nF
Pd - Power Dissipation:
3W
Gate Charge(Qg):
102nC@10V
Mfr. Part #:
GL14P04-8
Package:
SOP-8
Product Description
Product Overview
The GL14P04-8 is a P-Channel Power MOSFET from Wuxi Guang Lei Electronic Technology Co., LTD, utilizing advanced trench technology for excellent RDS(ON) and low gate charge. Designed for a wide range of applications, it features a high-density cell design for ultra-low Rdson, fully characterized avalanche voltage and current, and an excellent package for good heat dissipation. This RoHS-compliant SOP-8 packaged MOSFET is suitable for power switching applications, hard switched and high-frequency circuits, and uninterruptible power supplies.
Product Attributes
- Brand: GL Silicon
- Manufacturer: Wuxi Guang Lei Electronic Technology Co., LTD
- Channel Type: P-Channel
- Package Type: SOP-8
- Compliance: RoHS
Technical Specifications
| Symbol | Parameter | Test Conditions | Rating | Units |
|---|---|---|---|---|
| Absolute Ratings (Tc= 25 unless otherwise specified) | ||||
| VDSS | Drain-to-Source Voltage | -40 | V | |
| ID | Continuous Drain Current | -14 | A | |
| ID | Continuous Drain Current TC = 70 C | -12 | A | |
| IDMa1 | Pulsed Drain Current | -56 | A | |
| VGS | Gate-to-Source Voltage | 20 | V | |
| Easa5 | L=0.5mH | 180 | mJ | |
| dv/dt a3 | Peak Diode Recovery dv/dt | 5.0 | V/ns | |
| PD | Power Dissipation | 3.0 | W | |
| TJ, Tstg | Operating Junction and Storage Temperature Range | 55 to 150 | ||
| TL | Maximum Temperature for Soldering | 300 | ||
| Electrical Characteristics (Tc= 25 unless otherwise specified) | ||||
| OFF Characteristics | ||||
| VDSS | Drain to Source Breakdown Voltage | VGS=0V, ID=250A | -40 | V |
| IDSS | Drain to Source Leakage Current | VDS=-40V, VGS= 0V,Ta=25 | -- | 1.0 A |
| IGSS(F) | Gate to Source Forward Leakage | VGS=+20V | -- | 0.1 A |
| IGSS(R) | Gate to Source Reverse Leakage | VGS=-20V | -- | -0.1 A |
| ON Characteristicsa3 | ||||
| RDS(ON) | Drain-to-Source On-Resistance | VGS=-10V,ID=-14A | -- | 9 (Typ) / 11 (Max) m |
| VGS(TH) | Gate Threshold Voltage | VDS=VGS,ID=250A | -1 | -3.0 V |
| Dynamic Characteristicsa4 | ||||
| gfs | Forward Transconductance | VDS=-5V,ID=-14A | 25 | -- S |
| Ciss | Input Capacitance | VGS=0V,VDS=-15V f=1.0MHz | -- | 5100 pF |
| Coss | Output Capacitance | -- | 570 pF | |
| Crss | Reverse Transfer Capacitance | -- | 480 pF | |
| Resistive Switching Characteristicsa4 | ||||
| td(ON) | Turn-on Delay Time | VDD=-15V,ID=-14A VGS=-10V,RG=3 | -- | 15 ns |
| tr | Rise Time | -- | 12 ns | |
| td(OFF) | Turn-Off Delay Time | -- | 70 ns | |
| tf | Fall Time | -- | 18 ns | |
| Qg | Total Gate Charge | VDD=-15V, ID=-14A VGS=-10V | -- | 102 nC |
| Qgs | Gate to Source Charge | -- | 22 nC | |
| Qgd | Gate to Drain (Miller)Charge | -- | 27 nC | |
| Source-Drain Diode Characteristics | ||||
| IS | Continuous Source Current (Body Diode)a2 | -- | -14 A | |
| VSD | Diode Forward Voltagea3 | IS=-14A,VGS=0V | -- | -1.5 V |
| trr | Reverse Recovery Time | IS=-14A,Tj = 25C dIF/dt=100A/us,VGS=0V | -- | 38 ns |
| Qrr | Reverse Recovery Charge | -- | 30 nC | |
| RJC | Junction-to-Casea2 | 41.7 | /W | |
2409290933_GL-GL14P04-8_C2986238.pdf
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