PNP transistor GOODWORK A1015 with 50 volt collector emitter voltage and ER RoHS 2002 95 EC certification
Key Attributes
Model Number:
A1015
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
200mW
Transition Frequency(fT):
150MHz
Type:
PNP
Number:
1 PNP
Current - Collector(Ic):
150mA
Collector - Emitter Voltage VCEO:
50V
Operating Temperature:
-55℃~+150℃@(Tj)
Mfr. Part #:
A1015
Package:
SOT-23
Product Description
Product Overview
The A1015 is a PNP epitaxial silicon planar design general-purpose switching transistor. It features a collector-emitter voltage of -50V and a collector current of -0.15A. Designed for various switching applications, this transistor complies with ER RoHS 2002/95/EC directives and offers a transition frequency greater than 80MHz.
Product Attributes
- Brand: Not specified
- Origin: Not specified
- Material: PNP epitaxial silicon, planar design
- Color: Not specified
- Certifications: ER RoHS 2002/95/EC
Technical Specifications
| Parameter | Symbol | Test Condition | Min. | Typ. | Max. | Unit |
| Collector-Base Voltage | VCBO | -50 | V | |||
| Collector-Emitter Voltage | VCEO | -50 | V | |||
| Emitter-Base Voltage | VEBO | -5 | V | |||
| Collector Current | IC | -0.15 | A | |||
| Total Device Dissipation (FR-5 BOARD) | PD | 0.2 | W | |||
| Thermal Resistance Junction to Ambient | RJA | 625 | OC/W | |||
| Junction Temperature | TJ | 150 | OC | |||
| Storage Temperature | TSTG | -55 | +150 | OC | ||
| Collector-Base breakdown voltage | V(BR)CBO | IC=-100uA,IE=0 | -50 | V | ||
| Collector-Emitter breakdown voltage | V(BR)CEO | IC=-0.1mA,IB=0 | -50 | V | ||
| Emitter-Base breakdown voltage | V(BR)EBO | IE=-100uA,IC=0 | -5 | V | ||
| Collector cut-off current | ICBO | VCB=-50V,IC=0 | -0.1 | uA | ||
| Collector cut-off current | ICEX | -0.1 | uA | |||
| Base cut-off current | IBEX | -0.1 | uA | |||
| Emitter cut-off current | IEBO | VEB=-5V,IC=0 | -0.1 | uA | ||
| DC current gain | HFE | IC=-2mA,VCE=-6V | 130 | 400 | ||
| DC current gain | HFE | IC=-10mA,IB=-1mA | 100 | |||
| DC current gain | HFE | IC=-100mA,IB=-10mA | 100 | |||
| Collector-Emitter saturation voltage | VCE(SAT) | IC=-10mA,IB=-1mA | -0.2 | V | ||
| Collector-Emitter saturation voltage | VCE(SAT) | IC=-100mA,IB=-10mA | -0.3 | V | ||
| Base-Emitter Saturation voltage | VBE(SAT) | IC=-10mA,IB=-1mA | -0.85 | V | ||
| Base-Emitter Saturation voltage | VBE(SAT) | IC=-100mA,IB=-10mA | -0.95 | V | ||
| Input capacitance | CIB | VCB=-5V,IE=0,f=1MHZ | 4.0 | pF | ||
| Output capacitance | COB | VEB=-0.5V,IC=0,f=1MHZ | 8.0 | pF | ||
| Transition frequency | fT | IC=-1mA,VCE=-10V, f=30MHZ | 150 | MHZ | ||
| Delay time | td | VCC=-3V,VBE=0.5V, IC=-10mA,IB=-1mA | 35 | nS | ||
| Rise time | tr | VCC=-3V,VBE=0.5V, IC=-10mA,IB=-1mA | 35 | nS | ||
| Storage time | ts | VCC=-3V,VBE=0.5V, IB1=IB2=-1mA | 200 | nS | ||
| Fall time | tf | VCE=-25V,IB=0 | 50 | nS |
2410122011_GOODWORK-A1015_C909753.pdf
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