NPN Transistor Guangdong Hottech MMBTA44 with High Breakdown Voltage and Compact Surface Mount Design
Key Attributes
Model Number:
MMBTA44
Product Custom Attributes
Emitter-Base Voltage(Vebo):
6V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
350mW
Transition Frequency(fT):
-
Type:
NPN
Current - Collector(Ic):
200mA
Collector - Emitter Voltage VCEO:
400V
Operating Temperature:
-
Mfr. Part #:
MMBTA44
Package:
SOT-23
Product Description
MMBTA44 BIPOLAR TRANSISTOR (NPN)
The MMBTA44 is an NPN bipolar transistor designed for surface mount applications. It is a complementary part to the MMBTA94, offering high breakdown voltage and low collector-emitter saturation voltage. This device is suitable for various electronic circuits requiring a reliable NPN transistor in a compact SOT-23 package.
Product Attributes
- Brand: SHENZHEN HOTTECH ELECTRONICS CO.,LTD
- Complementary to: MMBTA94
- Material: Molded Plastic (UL flammability Classification Rating: 94V-0)
- Package: SOT-23
- Origin: China (implied by Shenzhen Hottech Electronics)
Technical Specifications
| Parameter | Symbol | Value | Unit | Conditions |
|---|---|---|---|---|
| Collector-Base Voltage | VCBO | 400 | V | |
| Collector-Emitter Voltage | VCEO | 400 | V | |
| Emitter-Base Voltage | VEBO | 6 | V | |
| Collector Current (continuous) | IC | 200 | mA | |
| Collector Current (peak) | ICM | 300 | mA | |
| Collector Power Dissipation | PC | 350 | mW | TA = 25C |
| Junction Temperature | TJ | 150 | C | |
| Storage Temperature | TSTG | -55 ~+150 | C | |
| Collector-base breakdown voltage | V(BR)CBO | 400 | V | IC=100uAIE=0 |
| Collector-emitter breakdown voltage | V(BR)CEO | 400 | V | IC=1mAIB=0 |
| Emitter-base breakdown voltage | V(BR)EBO | 6 | V | IE=10uAIC=0 |
| Collector cut-off current | ICBO | 0.1 | uA | VCB=400V, IE=0 |
| Emitter cut-off current | IEBO | 0.1 | uA | VEB=4V, IC=0 |
| DC current gain (hFE1) | hFE1 | 40 | VCE=10V, IC=1mA | |
| DC current gain (hFE2) | hFE2 | 50-200 | VCE=10V, IC=10mA | |
| DC current gain (hFE3) | hFE3 | 40 | VCE=10V, IC=100mA | |
| Collector-emitter saturation voltage (VCE(sat)1) | VCE(sat) | 0.4 | V | IC=1mAIB=0.1mA |
| Collector-emitter saturation voltage (VCE(sat)2) | VCE(sat) | 0.5 | V | IC=10mAIB=1mA |
| Collector-emitter saturation voltage (VCE(sat)3) | VCE(sat) | 0.75 | V | IC=50mAIB=5mA |
| Base-emitter saturation voltage | VBE(sat) | 0.75 | V | IC=10mAIB=1mA |
| Collector output capacitance | COB | 7 | pF | VCB=20V, IE=0, f=1MHz |
| Emitter Input capacitance | CIB | 130 | pF | VEB=0.5V, IC=0, f=1MHz |
| Thermal Resistance Junction To Ambient | RJA | 357 | C/W |
2410010331_Guangdong-Hottech-MMBTA44_C181174.pdf
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