N Channel Power MOSFET GOODWORK SI2318 Designed for Minimal On State Resistance and Fast Switching
Key Attributes
Model Number:
SI2318
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
5A
RDS(on):
33mΩ@10V,2A
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1.6V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
40pF@25V
Number:
1 N-channel
Input Capacitance(Ciss):
420pF@25V
Pd - Power Dissipation:
1.56W
Gate Charge(Qg):
4.7nC@4.5V
Mfr. Part #:
SI2318
Package:
SOT-23
Product Description
Product Overview
These N-Channel enhancement mode power field effect transistors utilize trench DMOS technology, optimized for minimal on-state resistance, superior switching performance, and robust high energy pulse handling in avalanche and commutation modes. They are well-suited for high efficiency fast switching applications.
Product Attributes
- Brand: DEMACHEL
- Technology: Trench DMOS
- Certifications: Green Device Available
Technical Specifications
| Part Number | Description | BVDSS (V) | RDSON (m) | ID (A) | VGS (V) | VGS(th) (V) | Qg (nC) | Ciss (pF) | Coss (pF) | Crss (pF) |
| SI2318 | N-Channel Power MOSFET | 40 | 33 (Typ. @ 10V) | 5 (Cont. @ 25C) | 10 | 1.0 - 2.5 | 4.7 (Typ.) | 420 (Typ.) | 65 (Typ.) | 40 (Typ.) |
2504101957_GOODWORK-SI2318_C42456347.pdf
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