Synchronous Buck Converter P Channel MOSFET GOODWORK AO4407 with Low Gate Charge and Excellent RDS
Key Attributes
Model Number:
AO4407
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
12A
Operating Temperature -:
-55℃~+150℃
RDS(on):
9.5mΩ@10V,10A
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Reverse Transfer Capacitance (Crss@Vds):
206pF@15V
Number:
1 P-Channel
Input Capacitance(Ciss):
1.77nF@15V
Pd - Power Dissipation:
4.5W
Gate Charge(Qg):
22nC@10V
Mfr. Part #:
AO4407
Package:
SOP-8
Product Description
Product Overview
The AO4407 is a high cell density trenched P-channel MOSFET designed for synchronous buck converter applications. It offers excellent RDS(ON) and low gate charge, contributing to efficient power conversion. This device is RoHS and Green Product compliant, and is 100% EAS guaranteed with full function reliability.
Product Attributes
- Brand: Not specified
- Origin: Not specified
- Material: Not specified
- Color: Not specified
- Certifications: RoHS, Green Product
Technical Specifications
| Symbol | Parameter | Rating | Units | Test Condition | Min. | Typ. | Max. | ||
| Absolute Maximum Ratings | VDS | Drain-Source Voltage | -30 | V | |||||
| VGS | Gate-Source Voltage | ±20 | V | ||||||
| ID@TA=25°C | Continuous Drain Current, VGS @ -10V1 | -12 | A | ||||||
| ID@TA=70°C | Continuous Drain Current, VGS @ -10V1 | -9 | A | ||||||
| IDM | Pulsed Drain Current2 | -46 | A | ||||||
| EAS | Single Pulse Avalanche Energy3 | 55 | mJ | ||||||
| IAS | Avalanche Current | -50 | A | ||||||
| PD@TA=25°C | Total Power Dissipation4 | 4.5 | W | ||||||
| TSTG, TJ | Storage & Operating Junction Temperature Range | -55 to 150 | °C | ||||||
| Electrical Characteristics | V(BR)DSS | Drain-Source Breakdown Voltage | -30 | V | VGS=0V, ID= -250µA | -30 | - | - | |
| IDSS | Zero Gate Voltage Drain Current | -1 | µA | VDS= -30V, VGS=0V | - | - | - | ||
| IGSS | Gate to Body Leakage Current | ±100 | nA | VDS=0V, VGS= ±20V | - | - | ± | ||
| VGS(th) | Gate Threshold Voltage | -1.0 | - | -2.5 | V | VDS=VGS, ID= -250µµA | - | - | - |
| RDS(on) | Static Drain-Source on-Resistance | 9.5 | 14 | mΩ | VGS= -10V, ID= -10A | - | - | - | |
| RDS(on) | Static Drain-Source on-Resistance | 17 | 24 | mΩ | VGS= -4.5V, ID= -5A | - | - | - | |
| Dynamic Characteristics | Ciss | Input Capacitance | 1770 | pF | VDS= -15V, VGS=0V, f=1.0MHz | - | - | - | |
| Coss | Output Capacitance | 233 | pF | VDS= -15V, VGS=0V, f=1.0MHz | - | - | - | ||
| Crss | Reverse Transfer Capacitance | 206 | pF | VDS= -15V, VGS=0V, f=1.0MHz | - | - | - | ||
| Gate Charge | Qg | Total Gate Charge | 22 | nC | VDS= -15V, ID= -5A, VGS= -10V | - | - | - | |
| Qgs | Gate-Source Charge | 1.0 | nC | VDS= -15V, ID= -5A, VGS= -10V | - | - | - | ||
| Qgd | Gate-Drain(“Miller”) Charge | 1.8 | nC | VDS= -15V, ID= -5A, VGS= -10V | - | - | - | ||
| Switching Characteristics | td(on) | Turn-on Delay Time | 9 | ns | VDD= -15V, ID= -10A, VGS=-10V, RGEN=2.5Ω | - | - | - | |
| tr | Turn-on Rise Time | 13 | ns | VDD= -15V, ID= -10A, VGS=-10V, RGEN=2.5Ω | - | - | - | ||
| td(off) | Turn-off Delay Time | 48 | ns | VDD= -15V, ID= -10A, VGS=-10V, RGEN=2.5Ω | - | - | - | ||
| tf | Turn-off Fall Time | 20 | ns | VDD= -15V, ID= -10A, VGS=-10V, RGEN=2.5Ω | - | - | - | ||
| Drain-Source Diode Characteristics | IS | Maximum Continuous Drain to Source Diode Forward Current | -15 | A | - | - | - | ||
| ISM | Maximum Pulsed Drain to Source Diode Forward Current | -60 | A | - | - | - | |||
| VSD | Drain to Source Diode Forward Voltage | -0.8 | -1.2 | V | VGS=0V, IS= -15A | - | - | - | |
| trr | Reverse Recovery Time | 64 | ns | TJ=25°C, VDD= -24V,IF=-2.8A, dI/dt=-100A/μs | - | - | - | ||
| Qrr | Reverse Recovery Charge | 25 | nC | TJ=25°C, VDD= -24V,IF=-2.8A, dI/dt=-100A/μs | - | - | - |
2410121919_GOODWORK-AO4407_C6430946.pdf
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