High cell density trenched p channel mosfet GOODWORK 40P04 for synchronous buck converter power conversion
Key Attributes
Model Number:
40P04
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
40A
RDS(on):
10.5mΩ@10V;14.2mΩ@4.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1.6V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
230pF@20V
Number:
1 P-Channel
Input Capacitance(Ciss):
3.05nF@20V
Pd - Power Dissipation:
55W
Gate Charge(Qg):
28nC@10V
Mfr. Part #:
40P04
Package:
TO-252
Product Description
Product Overview
The 40P04 is a high cell density trenched P-channel MOSFET designed for synchronous buck converter applications. It offers excellent RDS(ON) and gate charge characteristics, contributing to efficient power conversion. This device meets RoHS and Green Product requirements, is 100% EAS guaranteed, and features full function reliability approval. It utilizes advanced high cell density trench technology for superior performance and reduced gate charge, leading to excellent CdV/dt effect decline.
Product Attributes
- Green Device Available
- 100% EAS Guaranteed
- RoHS Compliant
Technical Specifications
| Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Unit |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | -40 | V | |||
| Gate-Source Voltage | VGS | ±20 | V | |||
| Continuous Drain Current | ID | TC=25C | -40 | A | ||
| Continuous Drain Current | ID | TC=100C | -31 | A | ||
| Pulsed Drain Current | IDM | -200 | A | |||
| Single Pulse Avalanche Energy | EAS | 80 | mJ | |||
| Total Power Dissipation | PD | TC=25C | 55 | W | ||
| Operating Junction and Storage Temperature Range | TJ, TSTG | -55 | 150 | C | ||
| Thermal Characteristics | ||||||
| Thermal Resistance from Junction-to-Ambient | RJA | 61 | C/W | |||
| Thermal Resistance from Junction-to-Case | RJC | 2.27 | C/W | |||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS = 0V, ID = -250A | -40 | V | ||
| Gate-body Leakage current | lGSS | VDS = 0V, VGS = ±20V | ±100 | nA | ||
| Zero Gate Voltage Drain Current | IDSS | TJ=25C, VDS = -40V, VGS = 0V | 1 | μA | ||
| Zero Gate Voltage Drain Current | IDSS | TJ=100C, VDS = -40V, VGS = 0V | 5 | μA | ||
| Gate-Threshold Voltage | VGS(th) | VDS = VGS, ID = -250A | -1.0 | -1.6 | -2.5 | V |
| Drain-Source On-Resistance | RDS(on) | VGS = -10V, ID = -16A | 10.5 | 13 | mΩ | |
| Drain-Source On-Resistance | RDS(on) | VGS = -4.5V, ID = -12A | 14.2 | 20 | mΩ | |
| Forward Transconductance | gfs | VDS = -10V, ID = -16A | 44 | S | ||
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS = -20V, VGS =0V, f =1MHz | 3050 | pF | ||
| Output Capacitance | Coss | VDS = -20V, VGS =0V, f =1MHz | 282 | pF | ||
| Reverse Transfer Capacitance | Crss | VDS = -20V, VGS =0V, f =1MHz | 230 | pF | ||
| Gate Resistance | Rg | f =1MHz | 9 | Ω | ||
| Switching Characteristics | ||||||
| Total Gate Charge | Qg | VGS = -10V,VDS = -20V, ID= -16A | 28 | nC | ||
| Gate-Source Charge | Qgs | VGS = -10V,VDS = -20V, ID= -16A | 8 | nC | ||
| Gate-Drain Charge | Qg d | VGS = -10V,VDS = -20V, ID= -16A | 8.5 | nC | ||
| Turn-on Delay Time | td(on) | VGS =-10V, VDD = -15V, RG = 3Ω, ID= -16A | 38 | ns | ||
| Rise Time | tr | VGS =-10V, VDD = -15V, RG = 3Ω, ID= -16A | 31 | ns | ||
| Turn-off Delay Time | td(off) | VGS =-10V, VDD = -15V, RG = 3Ω, ID= -16A | 90 | ns | ||
| Fall Time | tf | VGS =-10V, VDD = -15V, RG = 3Ω, ID= -16A | 9.2 | ns | ||
| Drain-Source Body Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | IS = -1A, VGS = 0V | -1.2 | V | ||
| Continuous Source Current | IS | TC=25C | -50 | A | ||
2504101957_GOODWORK-40P04_C42457472.pdf
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