Hangzhou Silan Microelectronics SVF20N50F Power MOSFET with Optimized Switching Characteristics
Key Attributes
Model Number:
SVF20N50F
Product Custom Attributes
Drain To Source Voltage:
500V
Current - Continuous Drain(Id):
20A
Operating Temperature -:
-55℃~+150℃
RDS(on):
200mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
10.3pF
Number:
-
Output Capacitance(Coss):
355pF
Input Capacitance(Ciss):
2.6877nF
Pd - Power Dissipation:
72W
Gate Charge(Qg):
49.5nC@10V
Mfr. Part #:
SVF20N50F
Package:
TO-220F-3
Product Description
Product Overview
The SVF20N50F/PN is an N-channel enhancement mode power MOS field-effect transistor utilizing Silan's proprietary F-CellTM structure VDMOS technology. Designed with an improved planar stripe cell and guard ring terminal, it offers reduced on-state resistance, superior switching performance, and enhanced high-energy pulse withstand capability in avalanche and commutation modes. This device is widely applied in AC-DC power supplies, DC-DC converters, and H-bridge PWM motor drivers.
Product Attributes
- Brand: Silan Microelectronics
- Origin: HANGZHOU
- Material: Pb free
- Certifications: Pb free
Technical Specifications
| Part Number | Package | Drain-Source Voltage (VDS) | Gate-Source Voltage (VGS) | Drain Current (ID @ TC=25C) | Drain Current (ID @ TC=100C) | Drain Current Pulsed (IDM) | Power Dissipation (PD @ TC=25C) | RDS(on)(typ.) @ VGS=10V | Input Capacitance (Ciss) | Output Capacitance (Coss) | Reverse Transfer Capacitance (Crss) | Gate Charge (Qg) | Source-Drain Diode Forward Voltage (VSD @ IS=20.0A) | Reverse Recovery Time (Trr) | Thermal Resistance, Junction-to-Case (RJC) | Thermal Resistance, Junction-to-Ambient (RJA) |
| SVF20N50F | TO-220F-3L | 500 V | 30 V | 20.0 A | 12.6 A | 80.0 A | 72 W | 0.20 | 2687.7 pF | 355.0 pF | 10.3 pF | 49.50 nC | 1.4 V | 570.3 ns | 1.74 C/W | 62.5 C/W |
| SVF20N50PN | TO-3P | 500 V | 30 V | 20.0 A | 12.6 A | 80.0 A | 252 W | 0.20 | 2687.7 pF | 355.0 pF | 10.3 pF | 49.50 nC | 1.4 V | 570.3 ns | 0.50 C/W | 50 C/W |
2501091111_Hangzhou-Silan-Microelectronics-SVF20N50F_C403819.pdf
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