High Reliability Guangdong Hottech HKTQ80N03 Low Voltage N Channel MOSFET for Power Circuits
Key Attributes
Model Number:
HKTQ80N03
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
80A
Operating Temperature -:
-55℃~+150℃
RDS(on):
5.2mΩ@10V,20A
Gate Threshold Voltage (Vgs(th)):
2.5V
Reverse Transfer Capacitance (Crss@Vds):
260pF@15V
Number:
1 N-channel
Pd - Power Dissipation:
37W
Input Capacitance(Ciss):
1.92nF@15V
Gate Charge(Qg):
38nC@10V
Mfr. Part #:
HKTQ80N03
Package:
PDFN3333-8
Product Description
Product Overview
The HKTQ80N03 is a low voltage N-channel MOSFET designed for high-efficiency power management applications. It features ultra-low on-resistance and is suitable for DC-to-DC converters and load switch applications. Packaged in a PDFN3333 surface mount device, it offers excellent thermal performance and reliability.
Product Attributes
- Brand: HKTQ (SHENZHEN HOTTECH ELECTRONICS CO.,LTD)
- Product Type: Low Voltage MOSFET (N-Channel)
- Case Material: Molded Plastic
- Flammability Rating: UL 94V-0
- Marking: Q80N03
- Contact: hkt@heketai.com
Technical Specifications
| Parameter | Conditions | Min. | Typ. | Max. | Unit |
| VDS | Drain-Source Voltage | 30 | V | ||
| VGS | Gate-Source Voltage | 20 | V | ||
| ID@TC=25 | Continuous Drain Current | 80 | A | ||
| ID@TC=100 | Continuous Drain Current | 45 | A | ||
| IDM | Pulsed Drain Current | 280 | A | ||
| EAS | Single Pulse Avalanche Energy | 56 | mJ | ||
| IAS | Avalanche Current | 40 | A | ||
| PD@TC=25 | Total Power Dissipation | 37 | W | ||
| TSTG | Storage Temperature Range | -55 | 150 | ||
| TJ | Operating Junction Temperature Range | -55 | 150 | ||
| BVDSS | Drain-Source Breakdown Voltage (VGS=0V, ID=250uA) | 30 | V | ||
| RDS(ON) | Static Drain-Source On-Resistance (VGS=10 V, ID=20A) | 4.3 | 5.2 | m | |
| RDS(ON) | Static Drain-Source On-Resistance (VGS=4.5V, ID=20A) | 5.5 | 6.6 | m | |
| VGS(th) | Gate Threshold Voltage (VGS=VDS, ID =250uA) | 1.0 | 1.3 | 2.5 | V |
| IDSS | Drain-Source Leakage Current (VDS=30V, VGS=0V, TJ=25) | 1 | uA | ||
| IDSS | Drain-Source Leakage Current (VDS=24V, VGS=0V, TJ=125) | 10 | uA | ||
| IGSS | Gate-Source Leakage Current (VGS=20V, VDS=0V) | 100 | nA | ||
| Rg | Gate Resistance (VDS=0V, VGS=0V, f=1MHz) | 0.85 | |||
| Qg | Total Gate Charge (VDS=15V, VGS=10V, ID=20A) | 38 | nC | ||
| Qgs | Gate-Source Charge | 5.0 | |||
| Qgd | Gate-Drain Charge | 12 | |||
| Td(on) | Turn-On Delay Time (VDD=15V, VGS=10V, RG=3, ID=20A) | 8.5 | ns | ||
| Tr | Rise Time | 9 | ns | ||
| Td(off) | Turn-Off Delay Time | 30 | ns | ||
| Tf | Fall Time | 10 | ns | ||
| Ciss | Input Capacitance (VDS=15V, VGS=0V, f=1MHz) | 1920 | pF | ||
| Coss | Output Capacitance | 300 | pF | ||
| Crss | Reverse Transfer Capacitance | 260 | pF |
2410121744_Guangdong-Hottech-HKTQ80N03_C5364303.pdf
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